MSD4N70 700V N-Channel MOSFET Description The MSD4N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features • Originative New Design • 100% EAS Test • Rugged Gate Oxide Technology • Extremely Low Intrinsic Capacitances • Remarkable Switching Characteristics • Unequalled Gate Charge: 15 nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON) : 2.5 Ω (Typ.) @VGS=10V • RoHS compliant package Application • Low power battery chargers • Switch mode power supply (SMPS) • DC-AC converters. Packing & Order Information Part No./ R：2,500/Tape&Reel Graphic symbol Part No./ T：80/Tube , 4,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage ±30 V Continuous Drain Current (TC=25°C) 3.6 A Continuous Drain Current (TC=100°C) 2.3 A ID Publication Order Number: [MSD4N70] © Bruckewell Technology Corporation Rev. A -2014 MSD4N70 700V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit IDM Pulsed Drain Current 14.4 A EAS Single Pulsed Avalanche Energy 240 mJ EAR Repetitive Avalanche Energy 4.4 mJ dV/dt Peak Diode Recovery dV/dt 5.5 V/ns Power Dissipation (TC=25°C) 55 W -Derate above 25C 0.4 W/°C -55 to + 150 °C 300 °C PD TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds • Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC Junction-to-Case -- 2.5 RθJA Junction-to- Ambient -- 110 On Characteristics Symbol Parameter Units °C/W Test Conditions Min Typ. Max. Units VGS Gate Threshold Voltage VDS = VGS , ID = 250μA 2.0 -- 4.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V , ID = 2.25 A -- 2.2 2.4 Ω Off Characteristics Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS Breakdown Voltage /△TJ Temperature Coefficient IDSS IGSSF IGSSR Test Conditions Min Typ. Max. Units VGS = 0 V , ID=250μA 700 -- -- V -- 0.6 -- V/°C -- -- 1 μA VGS = 30 V , VDS = 0 V -- -- 100 nA VGS = -30 V , VDS = 0 V -- -- -100 nA ID = 250μA, Referenced to 25°C Zero Gate Voltage Drain VDS = 700 V , VGS = 0 V Current VDS = 560 V , TC = 125°C Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Publication Order Number: [MSD4N70] 10 © Bruckewell Technology Corporation Rev. A -2014 MSD4N70 700V N-Channel MOSFET Dynamic Characteristics Symbol Parameter CISS Test Conditions Input Capacitance VDS = 25 V, VGS = 0 V, Min Typ. Max. Units -- 550 730 pF -- 60 80 pF COSS Output Capacitance CRSS Reverse Transfer Capacitance -- 8 11 pF td(on) Turn-On Time -- 10 20 ns tr Turn-On Time VDS = 325 V, ID = 3.6 A, -- 35 70 ns td(off) Turn-Off Delay Time RG = 25 Ω -- 45 90 ns tf Turn-Off Fall Time -- 40 80 ns Qg Total Gate Charge -- 15 20 nC -- 2.8 -- nC -- 6.0 -- nC Min Typ. Max. Units Qgs Gate-Source Charge Qgd Gate-Drain Charge F = 1.0MHz VDS = 520 V,ID = 3.6 A, VGS = 10 V Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions IS Continuous Source-Drain Diode Forward Current -- -- 3.6 ISM Pulsed Source-Drain Diode Forward Current -- -- 16 VSD Source-Drain Diode Forward Voltage IS = 4.0 A , VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time IS = 4.0 A , VGS = 0 V -- 300 -- ns Qrr Reverse Recovery Charge diF/dt = 100A/μs -- 2.2 -- μC A Notes; 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS=4A, VDD=50V, RG=25W, Starting TJ=25℃ 3. ISD≦4A, di/dt≦300A/μs,VDD≦BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2% 5. Essentially Independent of Operating Temperature Publication Order Number: [MSD4N70] © Bruckewell Technology Corporation Rev. A -2014 MSD4N70 700V N-Channel MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MSD4N70] © Bruckewell Technology Corporation Rev. A -2014 MSD4N70 700V N-Channel MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MSD4N70] © Bruckewell Technology Corporation Rev. A -2014 MSD4N70 700V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSD4N70] © Bruckewell Technology Corporation Rev. A -2014