MS18N50

MS18N50
500V N-channel MOSFET
Description
The MS18N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• 100% EAS Test
• Extended Safe Operating Area
• RoHS compliant package
Application
• High current, High speed switching
• PFC (Power Factor Correction)
Graphic symbol
• SMPS (Switched Mode Power Supplies)
Packing & Order Information
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
18
A
Drain Current -Continuous (TC=100°C)
10.8
A
ID
IDM
Drain Current -Pulsed
72
A
EAS
Single Pulsed Avalanche Energy
990
mJ
EAR
Repetitive Avalanche Energy
23.5
mJ
dV/dt
Peak Diode Recovery dV/dt
4.5
V/ns
TJ, Tstg
Operating Junction and Storage Temperature
-55~+150
°C
Power Dissipation (TC=25°C)
238
W
Power Dissipation (TC=100°C)
1.8
W
PD
• Drain current limited by maximum junction temperature
Publication Order Number: [MS18N50]
© Bruckewell Technology Corporation Rev. A -2014
MS18N50
500V N-channel MOSFET
Thermal Characteristics
Symbol
Parameter
Value
Rthjc
Thermal Resistance resistance
0.53
RθJA
Thermal Resistance resistance
62.5
Units
°C/W
Static Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
5.0
V
VGS
VDS = VGS, ID = 250μA
3.0
BVDSS
VGS = 0 V , ID = 250μA
500
--
--
V
△BVDSS /△TJ
ID = 250μA, Referenced to 25°C
--
0.6
--
V/°C
--
--
--
--
IDSS
VDS = 500 V , VGS = 0 V
VDS = 400 V , VGS = 0 V , TC = 125°C
IGSSF
VGS =-30 V, VDS = 0 V
IGSSR
VGS = -30 V, VDS = 0 V
*RDS(ON)
VGS = 10 V , ID = 9 A
1
10
uA
100
nA
-100
nA
--
0.25
0.32
Ω
Min
Typ.
Max.
Units
--
2500
--
pF
--
400
--
pF
CRSS
--
40
--
pF
td(on)
--
70
--
ns
--
190
--
ns
--
100
--
ns
tf
--
100
--
ns
Qg
--
48.5
--
nC
--
14
--
nC
--
22
--
nC
Min
Typ.
Max.
Units
IS
--
--
18
ISM
--
--
72
Dynamic Characteristics
Symbol
Test Conditions
CISS
COSS
tr
td(off)
Qgs
VDS = 25 V, VGS = 0 V , f=1.0MHz
VDD = 250 V, ID = 18 A , RG = 25 Ω
VDD = 400 V, ID =18 A , VGS =10 V
Qgd
Source-Drain Diode Characteristics
Symbol
Test Conditions
A
VSD
IS = 18 A , VGS = 0 V
--
--
1.5
V
trr
IF = 18 A , VGS = 0 V
--
550
--
ns
Qrr
diF/dt=100A/us
--
5.5
--
uC
Publication Order Number: [MS18N50]
© Bruckewell Technology Corporation Rev. A -2014
MS18N50
500V N-channel MOSFET
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L= 5.5mH,IAS= 18.0A,VDD=50V,RG=25Ω,Starting TJ=25°˚C
3. ISD ≤ 16.0 A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
Publication Order Number: [MS18N50]
© Bruckewell Technology Corporation Rev. A -2014
MS18N50
500V N-channel MOSFET
■Characteristic Curves
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MS18N50]
© Bruckewell Technology Corporation Rev. A -2014
MS18N50
500V N-channel MOSFET
■Typical Electrical Characteristics
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MS18N50]
© Bruckewell Technology Corporation Rev. A -2014
MS18N50
500V N-channel MOSFET
■Characteristics Test Circuit & Waveform
FIG.12-RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
FIG.13-GATE CHARGE TEST CIRCUIT & WAVEFORM
FIG.14-UNCLAMPED LINDUCTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
Publication Order Number: [MS18N50]
© Bruckewell Technology Corporation Rev. A -2014
MS18N50
500V N-channel MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Publication Order Number: [MS18N50]
© Bruckewell Technology Corporation Rev. A -2014
MS18N50
500V N-channel MOSFET
Disclaimer
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WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
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generic applications.
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application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS18N50]
© Bruckewell Technology Corporation Rev. A -2014