MSF9N20 N-Channel 200-V (D-S) MOSFET Description The MSF9N20 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low RDS(on) trench technology • Low thermal impedance • Fast switching speed • RoHS compliant package Application • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter Value Unit VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current -Continuous (TC=25°C) 9 A IDM Drain Current Pulsed 50 A IS Single Pulsed Avalanche Energy 50 A PD Total Power Dissipation (TC = 25 °C) 60 W TJ,TSTG Operating and Storage Temperature Range -55 to +175 °C Publication Order Number: [MSF9N20] © Bruckewell Technology Corporation Rev. A -2014 MSF9N20 N-Channel 200-V (D-S) MOSFET Thermal characteristics (Tc=25°C unless otherwise noted) Symbol Parameter Max. RθJC Maximum Junction-to-Case 2.5 RθJA Maximum Junction-to-Ambient 62.5 Units °C/W Notes a. Pulse width limited by maximum junction temperature Static Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage ID(on) On-State Drain Current RDS(on) Drain-Source On-Resistance IDSS IGSS Min Typ. Max. Units VDS = VGS, ID=250μA 1 -- 3.5 V VGS = 10 V , VDS = 5 V 34 -- -- A -- -- -- -- VGS = 20 V , VDS = 0 V -- -- ±10 uA VGS = 10 V , ID = 9 A VGS = 5.5 V , ID = 8.5 A Zero Gate Voltage Drain VDS = 160 V , VGS = 0 V Current VDS = 160 V , VGS = 0 V , Tj = 55°C Gate-Body Leakage Current, Forward 400 500 1 25 V/°C uA gfs Forward Transcondctance VDS =15 V , ID = 10 A -- 20 -- S VSD Diode Forward Voltage VGS = 0 V , IS = 25 A -- 0.95 -- V Dynamic Characteristics Symbol Parameter Qg Test Conditions Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Time tr Turn-On Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS = 100 V,ID = 6 A, VGS = 10 V VDD = 100 V, ID = 15 A, VGS = 10 V , RG = 9.1 Ω RL = 10 Ω VDS = 15 V, VGS = 0 V, f = 1.0MHz Min Typ. Max. Units -- 15.8 -- nC -- 4.2 -- nC -- 4.4 -- nC -- 10.8 -- ns -- 17.6 -- ns -- 32.2 -- ns -- 30.2 -- ns -- 807 -- pF -- 81 -- pF -- 38 -- pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Publication Order Number: [MSF9N20] © Bruckewell Technology Corporation Rev. A -2014 MSF9N20 N-Channel 200-V (D-S) MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MSF9N20] © Bruckewell Technology Corporation Rev. A -2014 MSF9N20 N-Channel 200-V (D-S) MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MSF9N20] © Bruckewell Technology Corporation Rev. A -2014 MSF9N20 N-Channel 200-V (D-S) MOSFET ■Characteristics Test Circuit & Waveform Fig 12. Resistive Switching Test Circuit & Waveforms Fig 13. Gate Charge Test Circuit & Waveform Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Publication Order Number: [MSF9N20] © Bruckewell Technology Corporation Rev. A -2014 MSF9N20 N-Channel 200-V (D-S) MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSF9N20] © Bruckewell Technology Corporation Rev. A -2014