V60D100C-M3, V60D100CHM3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES TMBS ® eSMP® Series • Trench MOS Schottky technology TO-263AC (SMPD) • Very low profile - typical height of 1.7 mm • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 2 Top View Bottom View • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 V60D100C PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM 320 A VF at IF = 30 A (TA = 125 °C) 0.66 V TJ max. 150 °C Package TO-263AC (SMPD) Diode variations Dual common cathode MECHANICAL DATA Case: TO-263AC (SMPD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) SYMBOL V60D100C UNIT VRRM 100 V per device per diode Peak forward surge current 10 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range 60 IF(AV) IFSM A 30 320 A dV/dt 10 000 V/μs TJ, TSTG -40 to +150 °C Revision: 28-Mar-15 Document Number: 87952 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60D100C-M3, V60D100CHM3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 15 A TA = 25 °C IF = 30 A Instantaneous forward voltage per diode VF (1) IF = 5 A IF = 15 A TA = 125 °C Reverse current at rated VR per diode VR = 100 V MAX. 0.45 - 0.62 - 0.75 0.81 0.36 - UNIT V 0.54 - 0.66 0.73 TA = 25 °C 12 - μA TA = 125 °C 11 - mA - 1000 μA 27 85 mA IF = 30 A VR = 70 V TYP. TA = 25 °C IR (2) TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER per diode Typical thermal resistance SYMBOL V60D100C RJC 1.8 per device RJC 0.95 per device RJM (2) 3 per device RJA(1)(2) 45 UNIT °C/W Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink; thermal resistance R JA - junction to ambient; thermal resistance RJM - junction to mount ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AC (SMPD) V60D100C-M3/I 0.55 I 2000/reel 13" diameter plastic tape and reel TO-263AC (SMPD) V60D100CHM3/I (1) 0.55 I 2000/reel 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 28-Mar-15 Document Number: 87952 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60D100C-M3, V60D100CHM3 www.vishay.com Vishay General Semiconductor 65 60 55 50 45 40 35 30 25 20 15 10 5 0 RthJC = 0.95 °C/W RthJA = 45 °C/W 0 25 50 75 100 125 150 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 100 TA = 125 °C TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 10 Case Temperature (°C) 20 30 40 60 70 80 90 100 Fig. 4 - Typical Reverse Characteristics Per Diode 10 000 26 24 22 20 18 16 14 12 10 8 6 4 2 0 D = 0.8 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.3 D = 1.0 D = 0.2 D = 0.1 T D = tp/T tp Junction Capacitance (pF) D = 0.5 1000 100 0 5 10 15 20 25 30 35 0.1 1 Average Forward Current (A) TA = 100 °C 1 TA = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Transient Thermal Impedance (°C/W) TA = 125 °C 10 100 Fig. 5 - Typical Junction Capacitance Per Diode 100 TA = 150 °C 10 Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Instantaneous Forward Current (A) 50 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Average Power Loss (W) TA = 150 °C 10 100 Junction to Ambient 10 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Device Revision: 28-Mar-15 Document Number: 87952 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60D100C-M3, V60D100CHM3 www.vishay.com Vishay General Semiconductor (°C/W) Thermal Resistance Resista 50 Epoxy printed circiut board FR4 copper thickness = 70 μm 45 40 35 30 25 S(cm ( 2) 20 1 2 3 4 5 6 7 8 9 Copper Pad Areas (cm2) Fig. 7 - Thermal Resistance Junction-to-Ambient vs. Copper Pad Areas PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-263AC (SMPD) 5() WR WR 120 Mounting Pad Layout 0,1 5() 120 5() 0,1 Revision: 28-Mar-15 Document Number: 87952 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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