V10D120C-M3, V10D120CHM3 Datasheet

V10D120C-M3, V10D120CHM3
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.53 V at IF = 2.5 A
FEATURES
TMBS ® eSMP® Series
• Trench MOS Schottky technology
TO-263AC (SMPD)
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
K
• Low forward voltage drop, low power losses
• High efficiency operation
1
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
2
Top View
Bottom View
• AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
V10D120C
PIN 1
K
PIN 2
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection in commercial, inductrial, and
automotive application.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
120 V
MECHANICAL DATA
IFSM
100 A
VF at IF = 5.0 A (TA = 125 °C)
0.64 V
Case: TO-263AC (SMPD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
TJ max.
150 °C
Package
TO-263AC (SMPD)
Diode variations
Dual common cathode
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
SYMBOL
V10D120C
UNIT
VRRM
120
V
IF(AV)
10
5
A
100
A
dV/dt
10 000
V/μs
TJ, TSTG
-40 to +150
°C
IFSM
Revision: 06-Feb-15
Document Number: 89999
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10D120C-M3, V10D120CHM3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 2.5 A
IF = 5 A
Instantaneous forward voltage per diode
IF = 2.5 A
IF = 5 A
VR = 90 V
Reverse current at rated VR per diode
VR = 120 V
SYMBOL
TYP.
MAX.
0.61
-
0.79
0.94
0.53
-
0.64
0.72
2.3
-
μA
2.3
-
mA
-
500
μA
5
15
mA
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR (2)
TA = 25 °C
TA = 125 °C
UNIT
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
per diode
Typical thermal resistance
per device
per device
V10D120C
RJC
RJA
UNIT
3.5
2.5
(1)(2)
°C/W
48
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
(2) Free air, without heatsink
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT
(g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AC (SMPD)
V10D120C-M3/I
0.55
I
2000/reel
13" diameter plastic tape and reel
TO-263AC (SMPD)
V10D120CHM3/I (1)
0.55
I
2000/reel
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
12
4.4
RthJC = 2.5 °C/W
8
6
D = 0.8
4
10
Average Power Loss (W)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
RthJA = 48 °C/W
4
2
D = 0.5
D = 0.3
3.6
3.2
D = 1.0
D = 0.2
2.8
D = 0.1
2.4
2
1.6
T
1.2
0.8
0.4
D = tp/T
tp
4
5
0
0
0
25
50
75
100
125
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
150
0
1
2
3
6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 06-Feb-15
Document Number: 89999
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10D120C-M3, V10D120CHM3
www.vishay.com
Instantaneous Forward Current (A)
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Transient Thermal Impedance (°C/W)
Vishay General Semiconductor
100
Junction to Ambient
10
1
0.01
0.1
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
100
Fig. 6 - Typical Transient Thermal Impedance Per Device
50
100
TA = 150 °C
10
Thermal Resistance (°C/W)
Instantaneous Reverse Current (mA)
1
t - Pulse Duration (s)
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
Epoxy printed circuit
board FR4 copper
thickness = 70 μm
45
40
35
30
25
S (cm2)
0.0001
20
10
20
30
40
50
60
70
80
90
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
100
1
2
3
4
5
6
7
Copper Pad Areas
(cm2)
8
9
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
Junction Capacitance (pF)
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 06-Feb-15
Document Number: 89999
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10D120C-M3, V10D120CHM3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AC (SMPD)
5()
WR WR 120
Mounting Pad Layout
0,1
5()
120
5()
0,1
Revision: 06-Feb-15
Document Number: 89999
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000