MS69N68 Dual N-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper lead frame TSSOP-8 saves board space • Fast switching speed • High performance trench technology Typical Applications: • Battery Powered Instruments • Portable Computing • Mobile Phones • GPS Units and Media Players • RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS69N68] © Bruckewell Technology Corporation Rev. A -2014 MS69N68 Dual N-Channel 20-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter Value Unit VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V a 6.8 A a 5.5 A 30 A ID Continuous Drain Current (TA =25°C) Continuous Drain Current (TA =70°C) IDM IS PD TJ/TSTG Pulsed Drain Current b Continuous Source Current (Diode Conduction) a 2.2 A a 1.5 W a 1 W -55 to +150 °C Power Dissipation (TA =25°C) Power Dissipation (TA =70°C) Operating Junction and Storage Temperature Thermal Resistance Ratings Symbol Parameter RθJA Maximum a 83 a 120 Maximum Junction-to-Ambient (t <= 10 sec) Maximum Junction-to-Ambient (Steady-State) Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Static Symbol Parameter Test Conditions Min VGS(th) Gate-Source Threshold Voltage VDS = VGS, ID = -250μA 0.4 IGSS Gate-Body Leakage VDS = 0 V , VGS = ±8 V IDSS Zero Gate Voltage Drain Current ID(on) On-State Drain Current r DS(on) Drain-Source On-Resistance Typ. Max. V ±100 VDS = 16 V , VGS = 0 V 1 VDS = 16 V , VGS = 0 V , TJ= 55°C 10 VDS = 5 V, VGs = 4.5 V Units 25 nA uA A VDS = 4.5 V, ID = 5.0 A 22 VDS = 2.5 V, ID = 4.3 A 30 VDS = 1.8 V, ID = 3.5 A 46 mΩ gfs Forward Tranconductance VGS = 10 V, ID = 5.0 A 25 S VSD Diode Forward Voltage IS = 2.2 A , VGS = 0 V 0.7 V Publication Order Number: [MS69N68] © Bruckewell Technology Corporation Rev. A -2014 MS69N68 Dual N-Channel 20-V (D-S) MOSFET Dynamic Symbol Parameter Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Test Conditions VDS = 10 V , ID = 4.5 A, VGS = 5.0 V ID = 5.0 A , RL = 2.0 Ω, VGEN = 10 V , RGEN = 6 Ω VDD = 10 V VDS = 10 V f = 1 MHz ,VGS = 0 V Min Typ. Max. Units -- 6.2 -- nC -- 1.0 -- nC -- 1.9 -- nC -- 12 -- ns -- 15 -- ns -- 56 -- ns -- 17 -- ns -- 479 -- pF -- 72 -- pF -- 58 -- pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Publication Order Number: [MS69N68] © Bruckewell Technology Corporation Rev. A -2014 MS69N68 Dual N-Channel 20-V (D-S) MOSFET ■Typical Electrical Characteristics FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MS69N68] © Bruckewell Technology Corporation Rev. A -2014 MS69N68 Dual N-Channel 20-V (D-S) MOSFET ■Typical Electrical Characteristics FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MS69N68] © Bruckewell Technology Corporation Rev. A -2014 MS69N68 Dual N-Channel 20-V (D-S) MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. 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Publication Order Number: [MS69N68] © Bruckewell Technology Corporation Rev. A -2014