NCV8537 500 mA High Accuracy Low Dropout Linear Regulator, with Power Good Function The NCV8537 is a high performance low dropout linear voltage regulator. Based on the popular NCV8535, the device retains all the best features of its predecessor which includes high accuracy, excellent stability, low noise performance and reverse bias protection but now includes a Power Good output signal to enable monitoring of the supply system. The device is available with fixed or adjustable outputs and is packaged in a 10 pin 3x3 mm DFN package. http://onsemi.com DFN10 MN SUFFIX CASE 485C Features High Accuracy Output Over Line and Load Variances (0.9% at 25C) Operating Temperature Range: −40C to 125C Power Good Output to Indicate the Regulator is Within Specified Limits Stable Output with Low Value Capacitors of any type and with no Minimum Load Current Requirement Incorporates Current Limiting and Reverse Bias Protection Thermal Shutdown Protection Low Dropout Voltage at Full Load (340 mV typ at Vo = 3.3 V) Low Noise (33 mVrms w/ 10 nF Cnr and 52 mVrms w/out Cnr) Low Shutdown Current (< 1 mA) Reverse Bias Protected 2.9 V to 12 V Supply Range Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and Adjustable Output Voltages NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These are Pb−Free Devices Applications May, 2013 − Rev. 2 Pin 1, 2. Vout 3. Sense / ADJ 4. GND 5. PWRG 6. NC 7. NR 8. SD 9, 10. Vin EP, GND MARKING DIAGRAM 1 xxx A L Y W G V8537 xxx ALYWG G = Specific Device Marking = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) Networking Systems, DSL/Cable Modems Audio Systems for Automotive Applications Navigation Systems Satellite Receivers Semiconductor Components Industries, LLC, 2013 PIN CONFIGURATION ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 15 of this data sheet. 1 Publication Order Number: NCV8537/D NCV8537 ON 6 OFF 8 9 10 Vin Cnr (Optional) 7 NR NC SD SENSE IN OUT IN OUT + Cin 1.0 mF R1 PWRG EP 100k 5 EP 3 2 Vout 1 Cout 1.0 mF GND 4 + PWRG Figure 1. Typical Fixed Version Application Schematic ON 7 6 OFF 8 9 10 Vin Cnr (Optional) NR NC SD ADJ IN OUT IN OUT + Cin 1.0 mF R1 PWRG EP 100k 5 EP GND 4 R2 3 2 R3 1 Vout Cout 1.0 mF + PWRG Figure 2. Typical Adjustable Version Application Schematic http://onsemi.com 2 NCV8537 Comp. PWRG Vin SD Enable Block Voltage Reference Current and Thermal Protection Circuit NR Error Amplifier Series Pass Element with Reverse Bias Protection Vout ADJ NCV8537 Adjustable GND Figure 3. Block Diagram, Adjustable Output Version Comp. PWRG Vin SD Enable Block Voltage Reference Current and Thermal Protection Circuit NR Error Amplifier Series Pass Element with Reverse Bias Protection Vout SENSE NCV8537 Fix GND Figure 4. Block Diagram, Fixed Output Version http://onsemi.com 3 NCV8537 PIN FUNCTION DESCRIPTION Pin No. Pin Name 1, 2 Vout Description 3 SENSE/ADJ 4 GND 5 PWRG 6 NC Not Connected 7 NR Noise Reduction Pin. This is an optional pin used to further reduce noise. 8 SD Shutdown pin. When not in use, this pin should be connected to the input pin. 9, 10 Vin Power Supply Input Voltage EPAD EPAD Regulated output voltage. Bypass to ground with Cout w 1.0 mF For output voltage sensing, connect to Pins 1 and 2.at Fixed output Voltage version Adjustable pin at Adjustable output version Power Supply Ground Power Good Exposed thermal pad should be connected to ground. MAXIMUM RATINGS Symbol Value Unit Input Voltage Rating Vin −0.3 to +16 V Output Voltage Vout −0.3 to Vin +0.3 or 10 V* V VPWRG −0.3 to +16 V Shutdown Pin Voltage Vsh −0.3 to +16 V Junction Temperature Range TJ −40 to +150 C Storage Temperature Range Tstg −50 to +150 C PWRG Pin Voltage Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114) Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115) Charged Device Model (CDM) tested per EIA/JESD22−C101. *Which ever is less. Reverse bias protection feature valid only if (Vout − Vin) 7 V. THERMAL CHARACTERISTICS Test Conditions (Typical Value) Min Pad Board (Note 1) 1, Pad Board (Note 1) Unit Junction−to−Air, qJA 215 66 C/W Junction−to−Pin, J−L4 58 18 C/W Characteristic 1. As mounted on a 35 x 35 x 1.5 mm FR4 Substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and heat spreading area. JEDEC 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. Test conditions are under natural convection or zero air flow. http://onsemi.com 4 NCV8537 ELECTRICAL CHARACTERISTICS − 1.8 V (Vout = 1.8 V typical, Vin = 2.9 V, TA = −40C to +125C, unless otherwise noted, Note 2) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.9% 1.783 1.8 +0.9% 1.817 V Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.4% 1.774 1.8 +1.4% 1.826 V Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.5% 1.773 1.8 +1.5% 1.827 V Minimum Input Voltage Vinmin 2.9 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See Figure 9) Iload = 500 mA (Notes 3, 4) Iload = 300 mA (Notes 3, 4) Iload = 50 mA (Notes 3, 4) VDO Peak Output Current (See Figures 14 and 17) Ipk Short Output Current (See Figure 14) Vin < 7 V, TA = 25C Isc Thermal Shutdown / Hysteresis TJ Ground Current In Regulation Iload = 500 mA (Note 3) Iload = 300 mA (Note 3) Iload = 50 mA Iload = 0.1 mA mV 620 230 95 500 700 830 mA 900 mA 160/10 C IGND 9.0 4.6 0.8 − In Dropout Vin = 2.2 V, Iload = 0.1 mA In Shutdown VSD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise 14 7.5 2.5 220 mA 500 mA 1.0 mA 52 33 mA mVrms mVrms Power Good Voltage Low Threshold Hysteresis High Threshold Velft Power Good Pin Voltage Saturation (Ief − 1.0 mA) Vefdo 200 mV Power Good Pin Leakage Iefleak 1.0 mA tef 50 ms Power Good Blanking Time (Note 7) Shutdown Threshold Voltage ON Threshold Voltage OFF VSD SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin ISD Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 1.8 V) 93 95 2 97 2.0 % of Vout 99 0.4 V V 0.07 1.0 mA IOSD 0.07 1.0 mA IOUTR 10 mA 2. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 3. TA must be greater than 0C. 4. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation. http://onsemi.com 5 NCV8537 ELECTRICAL CHARACTERISTICS − 2.5 V (Vout = 2.5 V typical, Vin = 2.9 V, TA = −40C to +125C, unless otherwise noted, Note 5) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.9% 2.477 2.5 +0.9% 2.523 V Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.4% 2.465 2.5 +1.4% 2.535 V Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.5% 2.462 2.5 +1.5% 2.538 V Minimum Input Voltage Vinmin 2.9 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See Figure 10) Iload = 500 mA (Note 6) Iload = 300 mA (Note 6) Iload = 50 mA Iload = 0.1mA VDO Peak Output Current (See Figures 14 and 18) Ipk Short Output Current (See Figure 14) Vin < 7 V, TA = 25C Isc Thermal Shutdown / Hysteresis TJ Ground Current In Regulation Iload = 500 mA (Note 6) Iload = 300 mA (Note 6) Iload = 50 mA Iload = 0.1 mA mV 340 230 110 10 500 700 800 mA 900 mA 160/10 C IGND 9.0 4.6 0.8 − In Dropout Vin = 2.4 V, Iload = 0.1 mA In Shutdown VSD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Power Good Voltage Low Threshold Hysteresis High Threshold Velft 14 7.5 2.5 220 mA 500 mA 1.0 mA 56 35 93 95 2 97 mA mVrms mVrms % of Vout 99 Power Good Pin Voltage Saturation (Ief − 1.0 mA) Vefdo 200 mV Power Good Pin Leakage Iefleak 1.0 mA tef 50 ms Power Good Blanking Time (Note 7) Shutdown Threshold Voltage ON Threshold Voltage OFF VSD SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin ISD Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.5 V) 2.0 0.4 V V 0.07 1.0 mA IOSD 0.07 1.0 mA IOUTR 10 mA 5. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 6. TA must be greater than 0C. 7. Can be disabled per customer request. http://onsemi.com 6 NCV8537 ELECTRICAL CHARACTERISTICS − 3.3 V (Vout = 3.3 V typical, Vin = 3.7 V, TA = −40C to +125C, unless otherwise noted, Note 8) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.90% 3.27 3.3 0.90% 3.33 V Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.40% 3.254 3.3 1.40% 3.346 V Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.50% 3.325 3.3 1.50% 3.35 V Line Regulation Vin = 3.7 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.7 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 14) Ipk Short Output Current (See Figure 14) Vin < 7 V, TA = 25C Isc Thermal Shutdown / Hysteresis TJ Ground Current In Regulation Iload = 500 mA (Note 8) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 3.7 V, Iload = 0.1 mA In Shutdown VSD = 0 V IGND 500 700 800 mA 900 mA 160/10 9 4.6 0.8 − IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF mV 340 230 110 10 Vnoise C 14 7.5 2.5 220 mA 500 mA 1 mA mA mVrms 69 46 Power Good Voltage Low Threshold Hysteresis High Threshold Velft Power Good Pin Voltage Saturation (Ief = 1.0 mA) Vefdo 200 mV Power Good Pin Leakage Iefleak 1 mA tef 50 ms Power Good Blanking Time (Note 9) 93 95 2 97 % of Vout 99 Shutdown Threshold Voltage ON Threshold Voltage OFF VSD V SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin ISD 0.07 1 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 3.3 V) IOUTR 10 2 0.4 mA 8. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 9. Can be disabled per customer request. http://onsemi.com 7 NCV8537 ELECTRICAL CHARACTERISTICS − 5 V (Vout = 5.0 V typical, Vin = 5.4 V, TA = −40C to +125C, unless otherwise noted, Note 10) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin Vin = 5.4 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.90% 4.955 5 0.90% 5.045 V Output Voltage (Accuracy) Vin = 5.4 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.40% 4.93 5 1.40% 5.07 V Output Voltage (Accuracy) Vin = 5.4 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.50% 4.925 5 1.50% 5.075 V Line Regulation Vin = 5.4 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 5.4 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 14) Ipk Short Output Current (See Figure 14) Vin < 7 V, TA = 25C Isc Thermal Shutdown / Hysteresis TJ Ground Current In Regulation Iload = 500 mA (Note 10) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 3.2 V, Iload = 0.1 mA In Shutdown VSD = 0 V IGND 340 230 110 10 500 700 IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 830 mA 930 mA 160/10 9 4.6 0.8 − Vnoise mV C 14 7.5 2.5 220 mA 500 mA 1 mA mA mVrms 93 58 Power Good Voltage Low Threshold Hysteresis High Threshold Velft Power Good Pin Voltage Saturation (Ief = 1.0 mA) Vefdo 200 mV Power Good Pin Leakage Iefleak 1 mA tef 50 ms Power Good Blanking Time (Note 11) 93 95 2 97 % of Vout 99 Shutdown Threshold Voltage ON Threshold Voltage OFF VSD V SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin ISD 0.07 1 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 5 V) IOUTR 10 2 0.4 mA 10. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 11. Can be disabled per customer request. http://onsemi.com 8 NCV8537 ELECTRICAL CHARACTERISTICS − ADJUSTABLE (Vout = 1.25 V typical, Vin = 2.9 V, TA = −40C to +125C, unless otherwise noted, Note 12) Characteristic Symbol Min Typ Max Unit Reference Voltage (Accuracy) Vin = 2.9 V to Vout +4.0 V, Iload = 0.1 mA to 500 mA, TA = 25C Vref −0.90% 1.239 1.25 0.90% 1.261 V Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vref −1.40% 1.233 1.25 1.40% 1.268 V Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vref −1.50% 1.231 1.25 1.50% 1.269 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (Vout = 2.5 V − 10 V) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 14) Ipk Short Output Current (See Figure 14) Vin < 7 V, TA = 25C Vout v 3.3 V Vout > 3.3 V Isc Thermal Shutdown / Hysteresis TJ Ground Current In Regulation Iload = 500 mA (Note 12) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA In Dropout Vin = Vout + 0.1 V or 2.9 V (whichever is higher), Iload = 0.1 mA In Shutdown VSD = 0 V Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 500 700 830 900 930 160/ 10 mA mA C IGND 9 4.6 0.8 IGNDsh Vnoise Power Good Voltage Low Threshold Hysteresis High Threshold mV 340 230 110 10 Velft 14 7.5 2.5 220 mA 500 mA 1 mA mVrms 69 46 93 95 2 97 mA % of Vout 99 Power Good Pin Voltage Saturation (Ief = 1.0 mA) Vefdo 200 mV Power Good Pin Leakage Iefleak 1 mA tef 50 ms Power Good Pin Blanking Time (Note 13) Shutdown Threshold Voltage ON Threshold Voltage OFF VSD SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Vin v 5.4 V Vin > 5.4 V ISD V 2 0.4 0.07 1 5 1 Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = Vout (nom) v 7 V) IOUTR 1 mA mA mA 12. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 13. Can be disabled per customer request. http://onsemi.com 9 NCV8537 2.52 VIN = 2.9 V IOUT = 0 1.84 1.83 VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) 1.85 1.82 1.81 1.8 VOUT = 1.8 V 1.79 1.78 1.77 2.51 2.505 2.5 1.75 −40 2.49 2.485 2.48 −20 0 20 40 60 80 100 120 2.47 −40 140 20 40 60 80 100 120 140 Figure 5. Output Voltage vs. Temperature 1.8 V Version Figure 6. Output Voltage vs. Temperature 2.5 V Version 5.1 3.310 VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) 0 TA, TEMPERATURE (C) VIN = 3.7 V IOUT = 0 3.315 3.305 3.300 VOUT = 3.3 V 3.295 3.290 3.285 3.280 3.275 3.270 −40 −20 0 20 40 60 80 100 120 VIN = 5.4 V IOUT = 0 5.05 5 VOUT = 5.0 V 4.95 4.9 4.85 −40 140 −20 0 20 40 60 80 100 120 140 TA, TEMPERATURE (C) TA, TEMPERATURE (C) Figure 7. Output Voltage vs. Temperature 3.3 V Version Figure 8. Output Voltage vs. Temperature 5.0 V Version 900 400 800 VDO, DROPOUT VOLTAGE (mV) VDO, DROPOUT VOLTAGE (mV) −20 TA, TEMPERATURE (C) 3.320 700 600 500 mA 500 400 300 mA 200 50 mA 100 0 0 VOUT = 2.5 V 2.495 2.475 1.76 300 VIN = 2.9 V IOUT = 0 2.515 20 40 60 80 100 120 350 300 200 300 mA 150 50 mA 100 50 0 0 140 500 mA 250 20 40 60 80 100 120 140 TA, TEMPERATURE (C) TA, TEMPERATURE (C) Figure 9. Dropout Voltage vs. Temperature 1.8 V Version Figure 10. Dropout Voltage vs. Temperature 2.5 V Version http://onsemi.com 10 NCV8537 350 VDO, DROPOUT VOLTAGE (mV) VDO, DROPOUT VOLTAGE (mV) 400 350 300 500 mA 250 300 mA 200 150 50 mA 100 50 0 0 20 40 60 80 100 120 300 500 mA 250 300 mA 200 150 50 mA 100 50 0 140 0 20 40 60 80 100 120 140 TA, TEMPERATURE (C) TA, TEMPERATURE (C) Figure 11. Dropout Voltage vs. Temperature 3.3 V Version Figure 12. Dropout Voltage vs. Temperature 5.0 V Version 1000 900 700 Ipk 600 Vout (V) Ipk (mA), Isc (mA) 0.97 Vout Isc 800 500 400 300 200 VIN = 2.9 V VOUT = 1.8 V 100 0 0 20 40 60 80 100 120 Ipk Isc Iout (mA) (For specific values of Ipk and Isc, please refer to Figure 13) 140 TA, TEMPERATURE (C) Figure 13. Peak and Short Current vs. Temperature Figure 14. Output Voltage vs. Output Current 12 VIN = 2.9 V VOUT = 1.8 V 10 IGND, GROUND CURRENT (mA) IGND, GROUND CURRENT (mA) 12 500 mA 8 6 300 mA 4 2 0 0 50 mA 20 40 60 80 100 TA, TEMPERATURE (C) 120 8 6 4 2 0 140 VIN = 2.9 V VOUT = 1.8 V TA = 25C 10 0 0.1 0.2 0.3 0.4 IOUT, OUTPUT CURRENT (A) Figure 15. Ground Current vs. Temperature Figure 16. Ground Current vs. Output Current http://onsemi.com 11 0.5 NCV8537 0.8 25C 0.7 0C IOUT, OUTPUT CURRENT (A) IOUT, OUTPUT CURRENT (A) 0.8 0.6 0.5 −20C −40C 0.4 0.3 0.2 VIN = 2.9 V VOUT = 1.8 V 0.1 0.0 3.6 3.4 3.2 3 2.8 2.6 2.4 0.2 0.1 3.3 3.2 3.1 3 2.9 2.8 60 Iout = 0.5 A 50 40 Iout = 0.25 A 30 VIN = 2.9 V +0.5 VPP Modulation VOUT = 1.25 V TA = 25C 100 1k 10k 100k F, FREQUENCY (Hz) 70 VIN = 3.4 V +0.5 VPP Modulation VOUT = 2.5 V TA = 25C 60 Iout = 50 mA 80 40 20 500 NOISE DENSITY (nV/HZ) 500 Cnr = 0 nF 300 Cnr = 10 nF VIN = 2.9 V VOUT = 1.25 V TA = 25C 100 1k 10k 100k 1k 10k 100k F, FREQUENCY (Hz) 1M Figure 21. PSRR vs. Frequency 2.5 V Version 600 200 Iout = 0.25 A 10 600 400 Iout = 0.5 A 30 0 100 1M 2.7 50 Figure 20. PSRR vs. Frequency Adjustable Version NOISE DENSITY (nV/HZ) 3.4 90 Iout = 50 mA 0 10 VIN = 2.9 V VOUT = 2.5 V Figure 18. Output Current Capability for the 2.5 V Version PSRR, RIPPLE REJECTION (dB) PSRR, RIPPLE REJECTION (dB) 0.3 Figure 17. Output Current Capability for the 1.8 V Version 70 100 −40C −20C 0.4 VIN, INPUT VOLTAGE (V) 80 0 0.5 VIN, INPUT VOLTAGE (V) 90 10 0C 0.6 0.0 3.5 2.2 100 20 25C 0.7 1M 400 Cnr = 0 nF 300 200 100 0 10 Cnr = 10 nF VIN = 2.9 V VOUT = 2.5 V TA = 25C 100 1k 10k 100k 1M F, FREQUENCY (Hz) F, FREQUENCY (Hz) Figure 22. Output Noise Density Adjustable Version Figure 23. Output Noise Density 2.5 V Version http://onsemi.com 12 NCV8537 Figure 24. Power Good Activation Figure 25. Power Good Inactivation 300 15 250 10 qJA (C/W) MAXIMUM ESR (W) Vin at Data Sheet Test Conditions, 25C, 1 mF Capacitance Unstable Area 5.0 200 150 1 oz CF 100 2 oz CF 50 Stable Area 0 0 100 200 300 400 0 500 0 100 200 300 400 500 600 700 OUTPUT CURRENT (mA) COPPER HEAT SPREADING AREA (mm2) Figure 26. Stability with ESR vs. Output Current Figure 27. DFN10 Self−Heating Thermal Characterstics as a Function of Copper Area on the PCB NOTE: Typical characteristics were measured with the same conditions as electrical characteristics. http://onsemi.com 13 NCV8537 APPLICATIONS INFORMATION Reverse Bias Protection temperature is exceeded. This feature provides protection from a catastrophic device failure due to accidental overheating. This protection feature is not intended to be used as a substitute to heat sinking. The maximum power that can be dissipated, can be calculated with the equation below: Reverse bias is a condition caused when the input voltage goes to zero, but the output voltage is kept high either by a large output capacitor or another source in the application which feeds the output pin. Normally in a bipolar LDO all the current will flow from the output pin to input pin through the PN junction with limited current capability and with the potential to destroy the IC. Due to an improved architecture, the NCV8537 can withstand up to 7.0 V on the output pin with virtually no current flowing from output pin to input pin, and only negligible amount of current (tens of mA) flowing from the output pin to ground for infinite duration. PD + TJ(max) * TA RqJA (eq. 1) For improved thermal performance, contact the factory for the DFN package option. The DFN package includes an exposed metal pad that is specifically designed to reduce the junction to air thermal resistance, RqJA. Adjustable Operation The output voltage can be set by using a resistor divider as shown in Figure 2 with a range of 1.25 to 10 V. The appropriate resistor divider can be found by solving the equation below. The recommended current through the resistor divider is from 10 mA to 100 mA. This can be accomplished by selecting resistors in the kW range. As result, the Iadj * R2 becomes negligible in the equation and can be ignored. Input Capacitor An input capacitor of at least 1.0 mF, any type, is recommended to improve the transient response of the regulator and/or if the regulator is located more than a few inches from the power source. It will also reduce the circuit’s sensitivity to the input line impedance at high frequencies. The capacitor should be mounted with the shortest possible track length directly across the regular’s input terminals. V out + 1.25 * (1 ) R3ńR2) ) I adj * R2 Output Capacitor (eq. 2) Power Good Operation The NCV8537 remains stable with any type of capacitor as long as it fulfills its 1.0 mF requirement. There are no constraints on the minimum ESR and it will remain stable up to an ESR of 5.0 W. Larger capacitor values will improve the noise rejection and load transient response. The Power Good pin on the NCV8537 will produce a logic Low when it drops below the nominal output voltage. Refer to the electrical characteristics for the threshold values at which point the Power Good goes Low. When the NCV8537 is above the nominal output voltage, the Power Good will remain at logic High. The external pullup resistor needs to be connected between Vin and the Power Good pin. A resistor of approximately 100 kW is recommended to minimize the current consumption. No pullup resistor is required if the Power Good output is not being used. The Power Good does not function during thermal shutdown and when the part is disabled. Noise Reduction Pin Output noise can be greatly reduced by connecting a 10 nF capacitor (Cnr) between the noise reduction pin and ground (see Figure 1). In applications where very low noise is not required, the noise reduction pin can be left unconnected. Dropout Voltage The voltage dropout is measured at 97% of the nominal output voltage. Thermal Considerations Internal thermal limiting circuitry is provided to protect the integrated circuit in the event that the maximum junction http://onsemi.com 14 NCV8537 ORDERING INFORMATION Nominal Output Voltage Marking Package Shipping† NCV8537MN180R2G 1.8 V V8537 180 DFN10 (Pb−Free) 3000 / Tape & Reel NCV8537MN250R2G 2.5 V V8537 250 DFN10 (Pb−Free) 3000 / Tape & Reel NCV8537MN330R2G 3.3 V V8537 330 DFN10 (Pb−Free) 3000 / Tape & Reel NCV8537MN500R2G 5.0 V V8537 500 DFN10 (Pb−Free) 3000 / Tape & Reel NCV8537MNADJR2G Adj V8537 ADJ DFN10 (Pb−Free) 3000 / Tape & Reel Device* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. **Please contact factory for other voltage options. http://onsemi.com 15 NCV8537 PACKAGE DIMENSIONS DFN10, 3x3, 0.5P CASE 485C ISSUE C D PIN 1 REFERENCE 2X 2X L1 ÇÇÇ ÇÇÇ ÇÇÇ 0.15 C EDGE OF PACKAGE A B DETAIL A Bottom View (Optional) E EXPOSED Cu TOP VIEW MOLD CMPD 0.15 C (A3) DETAIL B 0.10 C A1 A 10X A1 D2 10X 10X L 1 SOLDERING FOOTPRINT* 5 2.6016 DIM A A1 A3 b D D2 E E2 e K L L1 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 3.00 BSC 2.40 2.60 3.00 BSC 1.70 1.90 0.50 BSC 0.19 TYP 0.35 0.45 0.00 0.03 E2 K 10 10X 1.8508 2.1746 6 3.3048 b 0.10 C A B 0.05 C C DETAIL A e A3 DETAIL B Side View (Optional) SEATING PLANE 0.08 C SIDE VIEW ÉÉÉ ÉÉÉ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG SIDE EDGE. MOLD FLASHING MAY NOT EXCEED 30 MICRONS ONTO BOTTOM SURFACE OF TERMINAL b. 6. DETAILS A AND B SHOW OPTIONAL VIEWS FOR END OF TERMINAL LEAD AT EDGE OF PACKAGE. 7. FOR DEVICE OPN CONTAINING W OPTION, DETAIL B ALTERNATE CONSTRUCTION IS NOT APPLICABLE. BOTTOM VIEW NOTE 3 10X 0.5651 10X 0.5000 PITCH 0.3008 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 16 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCV8537/D