NCV8535 Ultra High Accuracy, Low Iq, 500 mA Low Dropout Regulator with Enable The NCV8535 is a high performance, low dropout regulator. With accuracy of 0.9% over line and load and ultra−low quiescent current and noise it encompasses all of the necessary features required by today’s consumer electronics. This unique device is guaranteed to be stable without a minimum load current requirement and stable with any type of capacitor as small as 1.0 mF. The NCV8535 also comes equipped with sense and noise reduction pins to increase the overall utility of the device. The NCV8535 offers reverse bias protection. Features High Accuracy Over Line and Load (0.9% at 25C) Ultra−Low Dropout Voltage at Full Load (260 mV typ.) No Minimum Output Current Required for Stability Low Noise (31 mVrms w/10 nF Cnr and 51 mVrms w/out Cnr) Low Shutdown Current (0.07 mA) Reverse Bias Protected 2.9 V to 12 V Supply Range Thermal Shutdown Protection Current Limitation Requires Only 1.0 mF Output Capacitance for Stability Stable with Any Type of Capacitor (including MLCC) Available in 1.5 V, 1.8 V, 1.9 V, 2.5 V, 2.8 V, 2.85 V, 3.0 V, 3.3 V, 3.5 V, 5.0 V and Adjustable Output Voltages NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These are Pb−Free Devices Applications PCMCIA Card Cellular Phones Camcoders and Cameras Networking Systems, DSL/Cable Modems Cable Set−Top Box MP3/CD Players DSP Supply Displays and Monitors Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 4 http://onsemi.com DFN10 MN SUFFIX CASE 485C PIN CONFIGURATION Fixed Version Pin 1, 2. Vout 3. Sense 4. GND 5, 6. NC 7. NR 8. SD 9, 10. Vin Adj Version Pin 1, 2. Vout 3. Adj 4. GND 5, 6. NC 7. NR 8. SD 9, 10. Vin MARKING DIAGRAM 1 V8535 xxx ALYWG G V8535= Specific Device Code xxx = ADJ, 150, 180, 190, 250, 280, 285, 300, 330, 350, 500 A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 21 of this data sheet. 1 Publication Order Number: NCV8535/D NCV8535 Cnr 10 nF (Optional) 7 NR SENSE 9 10 Vin IN OUT IN OUT + Cin 1.0 mF 2 Vout 1 Cout 1.0 mF GND SD 8 3 4 + ON OFF Figure 1. Typical Fixed Version Application Schematic Cnr 10 nF (Optional) 7 NR OUT 9 10 Vin Cin 1.0 mF OUT IN ADJ IN + SD 8 2 1 3 R1 CADJ 68 pF Vout Cout 1.0 mF R2 GND 4 ON OFF Figure 2. Typical Adjustable Version Application Schematic http://onsemi.com 2 + NCV8535 Figure 3. Block Diagram, Fixed Output Version Figure 4. Block Diagram, Adjustable Output Version http://onsemi.com 3 NCV8535 PIN FUNCTION DESCRIPTION Pin No. Pin Name Description FIXED VERSION 1, 2 Vout 3 SENSE 4 GND 7 NR Noise Reduction Pin. This is an optional pin used to further reduce noise. Regulated output voltage. Bypass to ground with Cout w 1.0 mF. For output voltage sensing, connect to Pins 1 and 2. Power Supply Ground 8 SD Shutdown pin. When not in use, this pin should be connected to the input pin. 9, 10 Vin Power Supply Input Voltage 5, 6 NC Not Connected EPAD EPAD Exposed thermal pad should be connected to ground. ADJUSTABLE VERSION Vout Regulated output voltage. Bypass to ground with Cout w 1.0 mF. 3 Adj Adjustable pin; reference voltage = 1.25 V. 4 GND 7 NR Noise Reduction Pin. This is an optional pin used to further reduce noise. 8 SD Shutdown pin. When not in use, this pin should be connected to the input pin. 9, 10 Vin Power Supply Input Voltage 5, 6 NC Not Connected EPAD EPAD 1, 2 Power Supply Ground Exposed thermal pad should be connected to ground. MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage Vin −0.3 to +16 V Output Voltage Vout −0.3 to Vin +0.3 or 10 V* V Shutdown Pin Voltage Vsh −0.3 to +16 V Junction Temperature Range TJ −40 to +150 C Storage Temperature Range Tstg −55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114) Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115) Charged Device Model (CDM) tested per EIA/JESD22−C101 *Which ever is less. Reverse bias protection feature valid only if Vout − Vin 7 V. THERMAL CHARACTERISTICS Test Conditions (Typical Value) Min Pad Board (Note 1) 1, Pad Board (Note 1) Unit Junction−to−Air, qJA 215 66 C/W Junction−to−Pin, yJL2 55 17 C/W Characteristic 1. As mounted on a 35 x 35 x 1.5 mm FR4 Substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and heat spreading area. JEDEC 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. Test conditions are under natural convection or zero air flow. http://onsemi.com 4 NCV8535 ELECTRICAL CHARACTERISTICS – 5.0 V (Vout = 5.0 V typical, Vin = 5.4 V, TA = −40C to +85C, unless otherwise noted, Note 2.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.9% 4.955 5.0 +0.9% 5.045 V Output Voltage (Accuracy) Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.4% 4.930 5.0 +1.4% 5.070 V Output Voltage (Accuracy) Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.5% 4.925 5.0 +1.5% 5.075 V Line Regulation Vin = 5.4 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 5.4 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown 340 230 110 10 500 TJ Ground Current In Regulation Iload = 500 mA (Note 3) Iload = 300 mA (Note 3) Iload = 50 mA Iload = 0.1 mA 700 mV 830 mA 930 mA 160 C IGND In Dropout Vin = 4.9 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA 93 58 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 5.0 V) IOUTR 10 mA 2. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 3. TA must be greater than 0C. http://onsemi.com 5 NCV8535 ELECTRICAL CHARACTERISTICS – 3.5 V (Vout = 3.5 V typical, Vin = 3.9 V, TA = −40C to +85C, unless otherwise noted, Note 4.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.9 V to 7.5 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.9% 3.469 3.5 +0.9% 3.532 V Output Voltage (Accuracy) Vin = 3.9 V to 7.5 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.4% 3.451 3.5 +1.4% 3.549 V Output Voltage (Accuracy) Vin = 3.9 V to 7.5 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.5% 3.448 3.5 +1.5% 3.553 V Line Regulation Vin = 3.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown 340 230 110 10 500 TJ Ground Current In Regulation Iload = 500 mA (Note 5) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA 700 mV 800 mA 900 mA 160 C IGND In Dropout Vin = 3.4 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA 68 47 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 3.5 V) IOUTR 10 mA 4. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. TA must be greater than 0C. http://onsemi.com 6 NCV8535 ELECTRICAL CHARACTERISTICS – 3.3 V (Vout = 3.3 V typical, Vin = 3.7 V, TA = −40C to +85C, unless otherwise noted, Note 6.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.9% 3.270 3.3 +0.9% 3.330 V Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.4% 3.254 3.3 +1.4% 3.346 V Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.5% 3.250 3.3 +1.5% 3.350 V Line Regulation Vin = 3.7 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.7 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown 340 230 110 10 500 TJ Ground Current In Regulation Iload = 500 mA (Note 7) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA 700 mV 800 mA 900 mA 160 C IGND In Dropout Vin = 3.2 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA 69 46 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 3.3 V) IOUTR 10 mA 6. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 7. TA must be greater than 0C. http://onsemi.com 7 NCV8535 ELECTRICAL CHARACTERISTICS – 3.0 V (Vout = 3.0 V typical, Vin = 3.4 V, TA = −40C to +85C, unless otherwise noted, Note 8.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.9% 2.973 3.0 +0.9% 3.027 V Output Voltage (Accuracy) Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.4% 2.958 3.0 +1.4% 3.042 V Output Voltage (Accuracy) Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.5% 2.955 3.0 +1.5% 3.045 V Line Regulation Vin = 3.4 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.4 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown 340 230 110 10 500 TJ Ground Current In Regulation Iload = 500 mA (Note 9) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA 700 800 mA 900 mA 160 C IGND In Dropout Vin = 2.9 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF mA 9.0 4.6 0.8 − 14 7.5 2.5 190 − 500 mA 0.07 1.0 mA 56 37 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mV mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 3.0 V) IOUTR 10 mA 8. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 9. TA must be greater than 0C. http://onsemi.com 8 NCV8535 ELECTRICAL CHARACTERISTICS − 2.85 V (Vout = 2.85 V typical, Vin = 3.25 V, TA = −40C to +85C, unless otherwise noted, Note 10) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.9% 2.824 2.85 +0.9% 2.876 V Output Voltage (Accuracy) Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.4% 2.810 2.85 +1.4% 2.890 V Output Voltage (Accuracy) (Note 11) Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.5% 2.807 2.85 +1.5% 2.893 V Line Regulation Vin = 3.25 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.25 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown 340 230 110 10 500 TJ Ground Current In Regulation Iload = 500 mA (Note 12) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA 700 mV 800 mA 900 mA 160 C IGND In Dropout Vin = 2.75 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA 61 40 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.85 V) IOUTR 10 mA 10. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 11. For output current capability for TA < 0C, please refer to Figure 18. 12. TA must be greater than 0C. http://onsemi.com 9 NCV8535 ELECTRICAL CHARACTERISTICS − 2.8 V (Vout = 2.8 V typical, Vin = 3.2 V, TA = −40C to +85C, unless otherwise noted, Note 13.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.9% 2.774 2.8 +0.9% 2.826 V Output Voltage (Accuracy) Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.4% 2.760 2.8 +1.4% 2.840 V Output Voltage (Accuracy) (Note 14) Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.5% 2.758 2.8 +1.5% 2.842 V Line Regulation Vin = 3.2 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.2 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown 340 230 110 10 500 TJ Ground Current In Regulation Iload = 500 mA (Note 15) Iload = 300 mA (Note 15) Iload = 50 mA Iload = 0.1 mA 700 mV 800 mA 900 mA 160 C IGND In Dropout Vin = 2.7 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA 52 36 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.8 V) IOUTR 10 mA 13. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 14. For output current capability for TA < 0C, please refer to Figure 19. 15. TA must be greater than 0C. http://onsemi.com 10 NCV8535 ELECTRICAL CHARACTERISTICS − 2.5 V (Vout = 2.5 V typical, Vin = 2.9 V, TA = −40C to +85C, unless otherwise noted, Note 16.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.9% 2.477 2.5 +0.9% 2.523 V Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.4% 2.465 2.5 +1.4% 2.535 V Output Voltage (Accuracy), (Note 17) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.5% 2.462 2.5 +1.5% 2.538 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA (Note 18) Iload = 300 mA (Note 18) Iload = 50 mA Iload = 0.1mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown 340 230 110 10 500 TJ Ground Current In Regulation Iload = 500 mA (Note 18) Iload = 300 mA (Note 18) Iload = 50 mA Iload = 0.1 mA 700 mV 800 mA 900 mA 160 C IGND 9.0 4.6 0.8 − In Dropout Vin = 2.4 V, Iload = 0.1 mA In Shutdown SD = 0 V 0.07 IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF mA 500 mA 1.0 mA 56 35 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin 14 7.5 2.5 190 mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.5 V) IOUTR 10 mA 16. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 17. For output current capability for TA < 0C, please refer to Figure 20. 18. TA must be greater than 0C. http://onsemi.com 11 NCV8535 ELECTRICAL CHARACTERISTICS − 1.9 V (Vout = 1.9 V typical, Vin = 2.9 V, TA = −40C to +85C, unless otherwise noted, Note 19.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 5.9 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.9% 1.883 1.9 +0.9% 1.917 V Output Voltage (Accuracy) Vin = 2.9 V to 5.9 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.4% 1.873 1.9 +1.4% 1.927 V Output Voltage (Accuracy), (Note 20) Vin = 2.9 V to 5.9 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.5% 1.872 1.9 +1.5% 1.929 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA (Notes 21, 22) Iload = 300 mA (Notes 21, 22) Iload = 50 mA (Notes 21, 22) VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 21) Iload = 300 mA (Note 21) Iload = 50 mA Iload = 0.1 mA 500 mV 367 156 90 1030 1030 1030 700 800 mA 900 mA 160 C IGND 9.0 4.6 0.8 − In Dropout Vin = 2.2 V, Iload = 0.1 mA In Shutdown SD = 0 V 0.07 IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF mA 500 mA 1.0 mA 53 33 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin 14 7.5 2.5 190 mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 1.9 V) IOUTR 10 mA 19. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 20. For output current capability for TA < 0C, please refer to Figure 21. 21. TA must be greater than 0C. 22. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation. http://onsemi.com 12 NCV8535 ELECTRICAL CHARACTERISTICS − 1.8 V (Vout = 1.8 V typical, Vin = 2.9 V, TA = −40C to +85C, unless otherwise noted, Note 23.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.9% 1.783 1.8 +0.9% 1.817 V Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.4% 1.774 1.8 +1.4% 1.826 V Output Voltage (Accuracy), (Note 24) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.5% 1.773 1.8 +1.5% 1.827 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA (Notes 25, 26) Iload = 300 mA (Notes 25, 26) Iload = 50 mA (Notes 25, 26) VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 25) Iload = 300 mA (Note 25) Iload = 50 mA Iload = 0.1 mA 500 mV 620 230 95 1130 1130 1130 700 830 mA 900 mA 160 C IGND 9.0 4.6 0.8 − In Dropout Vin = 2.2 V, Iload = 0.1 mA In Shutdown SD = 0 V 0.07 IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF mA 500 mA 1.0 mA 52 33 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin 14 7.5 2.5 190 mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 1.8 V) IOUTR 10 mA 23. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 24. For output current capability for TA < 0C, please refer to Figure 21. 25. TA must be greater than 0C. 26. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation. http://onsemi.com 13 NCV8535 ELECTRICAL CHARACTERISTICS − 1.5 V (Vout = 1.5 V typical, Vin = 2.9 V, TA = −40C to +85C, unless otherwise noted, Note 27.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = 25C Vout −0.9% 1.486 1.5 +0.9% 1.514 V Output Voltage (Accuracy) Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vout −1.4% 1.479 1.5 +1.4% 1.521 V Output Voltage (Accuracy), (Note 28) Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vout −1.5% 1.477 1.5 +1.5% 1.523 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA (Notes 29, 30) Iload = 300 mA (Notes 29, 30) Iload = 50 mA (Notes 29, 30) VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 29) Iload = 300 mA (Note 29) Iload = 50 mA Iload = 0.1 mA 500 mV 940 500 350 1430 1430 1430 700 860 mA 900 mA 160 C IGND 9.0 4.6 0.8 − In Dropout Vin = 2.2 V, Iload = 0.1 mA In Shutdown SD = 0 V 0.07 IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF mA 500 mA 1.0 mA 51 31 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin 14 7.5 2.5 190 mA mVrms mVrms 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 1.5 V) IOUTR 10 mA 27. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 28. For output current capability for TA < 0C, please refer to Figure 22. 29. TA must be greater than 0C. 30. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation. http://onsemi.com 14 NCV8535 ELECTRICAL CHARACTERISTICS – Adjustable (Vout = 1.25 V typical, Vin = 2.9 V, TA = −40C to +85C, unless otherwise noted, Note 31) Characteristic Symbol Min Typ Max Unit Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = 25C Vref −0.9% 1.239 1.25 +0.9% 1.261 V Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = 0C to +85C Vref −1.4% 1.233 1.25 +1.4% 1.268 V Reference Voltage (Accuracy) (Note 32) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = −40C to +125C Vref −1.5% 1.231 1.25 +1.5% 1.269 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note), Vout = 2.5 V to 10 V Iload = 500 mA (Note 33) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (Note 33) (See Figure 16) Ipk Short Output Current (See Figure 16) Vout 3.3 V Vout > 3.3 V Thermal Shutdown 340 230 110 10 500 Isc TJ Ground Current In Regulation Iload = 500 mA (Note 33) Iload = 300 mA (Note 33) Iload = 50 mA Iload = 0.1 mA 700 mV 860 mA 900 990 mA 160 C IGND In Dropout Vin = Vout −0.1 V or 2.2 V (whichever is higher), Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Shutdown Threshold Voltage ON Threshold Voltage OFF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA 38 26 2.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Vin 5.4 V Vin > 5.4 V mA mVrms mVrms 0.4 V V ISD 0.07 1.0 5.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = Vout (nom) 7 V) (Note 34) IOUTR 1.0 mA 31. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 32. For output current capability for TA < 0C, please refer to Figures 18 to 22. 33. TA must be greater than 0C. 34. Reverse bias protection feature valid only if Vout − Vin 7 V. http://onsemi.com 15 NCV8535 3.04 5.05 VOUT (V) 5.00 VOUT = 5.0 V 4.95 3.01 3.00 VOUT = 3.0 V 2.99 2.98 2.97 4.90 2.96 −15 10 35 60 85 110 2.95 −40 −20 135 150 40 60 80 100 120 140 Figure 5. Output Voltage vs. Temperature 5.0 V Version Figure 6. Output Voltage vs. Temperature 3.0 V Version 2.550 2.84 2.540 2.83 2.530 2.82 2.520 2.81 2.510 2.80 VOUT = 2.8 V 2.79 2.500 2.480 2.77 2.470 2.76 2.460 −20 0 20 40 60 80 100 120 VOUT = 2.5 V 2.490 2.78 2.450 −40 −20 140 0 20 40 60 80 100 120 140 TA, TEMPERATURE (C) TA, TEMPERATURE (C) Figure 7. Output Voltage vs. Temperature 2.8 V Version Figure 8. Output Voltage vs. Temperature 2.5 V Version 1.85 1.55 1.84 1.54 1.83 1.53 1.82 1.52 1.81 1.51 1.80 VOUT = 1.8 V 1.79 1.50 1.48 1.77 1.47 1.76 1.46 −20 0 20 40 60 80 100 120 VOUT = 1.5 V 1.49 1.78 1.75 −40 20 TA, TEMPERATURE (C) 2.85 2.75 −40 0 TA, TEMPERATURE (C) VOUT (V) VOUT (V) 3.03 3.02 4.85 −40 VOUT (V) 3.05 VOUT (V) OUTPUT VOLTAGE, VOUT (V) 5.10 1.45 −40 −20 140 0 20 40 60 80 100 120 140 TA, TEMPERATURE (C) TA, TEMPERATURE (C) Figure 9. Output Voltage vs. Temperature 1.8 V Version Figure 10. Output Voltage vs. Temperature 1.5 V Version http://onsemi.com 16 NCV8535 400 400 350 350 500 mA 250 300 mA 200 150 50 mA 100 250 200 150 0 20 40 60 80 100 120 0 140 60 80 100 120 140 TA, TEMPERATURE (C) 500 mA 900 800 500 mA VDO (mV) 700 600 300 mA 300 200 700 300 mA 600 500 400 50 mA 300 200 100 0 50 mA 0 40 Figure 12. Dropout Voltage vs. Temperature 2.5 V Version 1100 1000 500 400 20 TA, TEMPERATURE (C) 1200 900 800 0 Figure 11. Dropout Voltage vs. Temperature 2.8 V Version 1100 1000 VDO (mV) 50 mA 50 1200 100 0 300 mA 100 50 0 500 mA 300 VDO (mV) VDO (mV) 300 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 TA, TEMPERATURE (C) TA, TEMPERATURE (C) Figure 13. Dropout Voltage vs. Temperature 1.8 V Version Figure 14. Dropout Voltage vs. Temperature 1.5 V Version 1000 900 700 Ipk 600 Vout (V) Ipk (mA), Isc (mA) 0.97 Vout Isc 800 500 400 300 200 100 0 0 20 40 60 80 100 120 Ipk Isc Iout (mA) (For specific values of Ipk and Isc, please refer to Figure 15) 140 TA, TEMPERATURE (C) Figure 15. Peak and Short Current vs. Temperature Figure 16. Output Voltage vs. Output Current http://onsemi.com 17 NCV8535 0.8 12 0.7 10 500 mA −20C 0.5 IOUT (A) 8 IGND (mA) 0C 0.6 6 300 mA 4 0.4 0.3 0.2 2 0.1 50 mA 0 3.85 3.75 3.65 3.55 3.45 3.35 3.25 3.15 3.05 2.95 2.85 0 0 20 40 60 80 100 TA, TEMPERATURE (C) 120 140 VIN (V) Figure 18. Output Current Capability for the 2.85 V Version Figure 17. Ground Current vs. Temperature 800 0.8 700 0C 0.7 −40C 500 −20C 400 IOUT (A) −30C −10C 300 0.5 100 0.1 3.6 3.5 3.4 3.3 3.2 3.1 3.0 2.9 0 2.8 3.5 3.4 3.3 3.2 −20C 3.1 3.0 2.9 2.8 2.7 2.6 2.5 VIN (V) VIN (V) Figure 19. Output Current Capability for the 2.8 V Version Figure 20. Output Current Capability for the 2.5 V Version 800 800 125C 700 85C 600 500 −40C 500 −30C −20C 400 300 −10C 200 0C 125C 700 600 400 85C −40C −30C −20C 300 −10C 200 25C 100 0 −30C 0.3 0.2 3.7 −40C 0.4 200 0 3.8 −10C 0C 0.6 IOUT (mA) IOUT (mA) 600 IOUT (mA) −40C 0C 100 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 0 3.2 3.0 2.8 2.6 25C 2.4 2.2 2.0 VIN (V) VIN (V) Figure 21. Output Current Capability for the 1.8 V Version Figure 22. Output Current Capability for the 1.5 V Version http://onsemi.com 18 1.8 NCV8535 450 80 400 70 50 mA 250 mA 60 NOISE DENSITY (nV/ǠHz) 500 90 RR, RIPPLE REJECTION (dB) 100 50 500 mA 40 30 20 10 Vout = 2.5 V Cout = 10 mF TJ = 25C 0 0.01 Cout = 1.0 mF Cnr = 0 nF 350 300 250 200 Vout = 2.5 V Iout = 500 mA TJ = 25C 100 0 1.0 10 Cout = 1.0 mF Cnr = 10 nF 150 50 0.1 Cout = 10 mF Cnr = 0 nF 100 0.01 Cout = 10 mF Cnr = 10 nF 0.1 1.0 10 F, FREQUENCY (kHz) F, FREQUENCY (kHz) Figure 23. Ripple Rejection vs. Frequency Figure 24. Output Noise Density 100 300 qJA (C/W) 250 200 150 1 oz CF 100 2 oz CF 50 0 0 100 200 300 400 500 COPPER HEAT SPREADING AREA 600 700 (mm2) Figure 25. DFN 10 Self Heating Thermal Characteristic as a Function of Copper Area on the PCB 15 15 5 V, 0.1 mF 5 V, 10 mF 5 V, 1.0 mF 10 10 ESR (W) MAXIMUM ESR (W) Vin at Data Sheet Test Conditions, 25C, 1 mF Capacitance Unstable Area 5.0 1.25 V 5.0 Min ESR Stable Area 0 0 100 200 300 400 500 0 0 100 200 300 400 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 26. Stability with ESR vs. Iout Figure 27. Output Current vs. ESR NOTE: Typical characteristics were measured with the same conditions as electrical characteristics. http://onsemi.com 19 500 NCV8535 APPLICATIONS INFORMATION Reverse Bias Protection Adjustable Operation Reverse bias is a condition caused when the input voltage goes to zero, but the output voltage is kept high either by a large output capacitor or another source in the application which feeds the output pin. Normally in a bipolar LDO all the current will flow from the output pin to input pin through the PN junction with limited current capability and with the potential to destroy the IC. Due to an improved architecture, the NCV8535 can withstand up to 7.0 V on the output pin with virtually no current flowing from output pin to input pin, and only negligible amount of current (tens of mA) flowing from the output pin to ground for infinite duration. The output voltage can be set by using a resistor divider as shown in Figure 2 with a range of 1.25 to 10 V. The appropriate resistor divider can be found by solving the equation below. The recommended current through the resistor divider is from 10 mA to 100mA. This can be accomplished by selecting resistors in the kW range. As result, the Iadj*R2 becomes negligible in the equation and can be ignored. ǒ Ǔ Vout + 1.25 * 1 ) R1 ) Iadj * R2 R2 (eq. 1) Example: For Vout = 2.9 V, can use R1 = 36 kW and R2 = 27 kW. ǒ 1.25 * 1 ) Input Capacitor An input capacitor of at least 1.0 mF, any type, is recommended to improve the transient response of the regulator and/or if the regulator is located more than a few inches from the power source. It will also reduce the circuit’s sensitivity to the input line impedance at high frequencies. The capacitor should be mounted with the shortest possible track length directly across the regular’s input terminals. Ǔ 36 kW + 2.91 V 27 kW (eq. 2) Dropout Voltage The voltage dropout is measured at 97% of the nominal output voltage. No−Load Regulation Considerations If there is no load at output of the regulator and ambient temperature is higher than 85C leakage current flowing from input to output through pass transistor may cause increase of output voltage out of specification range up to input voltage level. To avoid this situation minimum load current of 100 mA or higher is recommended if ambient temperature exceeds 85C. Output Capacitor The NCV8535 remains stable with any type of capacitor as long as it fulfills its 1.0 mF requirement. There are no constraints on the minimum ESR and it will remain stable up to an ESR of 5.0 W. Larger capacitor values will improve the noise rejection and load transient response. Thermal Considerations Internal thermal limiting circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. This feature provides protection from a catastrophic device failure due to accidental overheating. This protection feature is not intended to be used as a substitute to heat sinking. The maximum power that can be dissipated, can be calculated with the equation below: Noise Reduction Pin Output noise can be greatly reduced by connecting a 10 nF capacitor (Cnr) between the noise reduction pin and ground (see Figure 1). In applications where very low noise is not required, the noise reduction pin can be left unconnected. For the adjustable version, in addition to the 10 nF Cnr, a 68 pF capacitor connected in parallel with R1 (see Figure 2) is recommended to further reduce output noise and improve stability. PD + http://onsemi.com 20 TJ(max) * TA RqJA (eq. 3) NCV8535 DEVICE ORDERING INFORMATION Device* Voltage Version Marking Code NCV8535MNADJR2G Adj. ADJ NCV8535MN150R2G 1.5 V 150 NCV8535MN180R2G 1.8 V 180 NCV8535MN190R2G 1.9 V 190 NCV8535MN250R2G 2.5 V 250 NCV8535MN280R2G 2.8 V 280 NCV8535MN285R2G 2.85 V 285 NCV8535MN300R2G 3.0 V 300 NCV8535MN330R2G 3.3 V 330 NCV8535MN350R2G 3.5 V 350 NCV8535MN500R2G 5.0 V 500 Package Shipping† DFN10 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. **Please contact factory for other voltage options. http://onsemi.com 21 NCV8535 PACKAGE DIMENSIONS DFN10, 3x3, 0.5P CASE 485C ISSUE C D PIN 1 REFERENCE 2X 2X L1 ÇÇÇ ÇÇÇ ÇÇÇ 0.15 C EDGE OF PACKAGE A B DETAIL A Bottom View (Optional) E EXPOSED Cu TOP VIEW MOLD CMPD 0.15 C (A3) DETAIL B 0.10 C A1 A 10X A1 D2 10X 10X L 1 SOLDERING FOOTPRINT* 5 2.6016 DIM A A1 A3 b D D2 E E2 e K L L1 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 3.00 BSC 2.40 2.60 3.00 BSC 1.70 1.90 0.50 BSC 0.19 TYP 0.35 0.45 0.00 0.03 E2 K 10 10X 1.8508 2.1746 6 3.3048 b 0.10 C A B 0.05 C C DETAIL A e A3 DETAIL B Side View (Optional) SEATING PLANE 0.08 C SIDE VIEW ÉÉÉ ÉÉÉ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG SIDE EDGE. MOLD FLASHING MAY NOT EXCEED 30 MICRONS ONTO BOTTOM SURFACE OF TERMINAL b. 6. DETAILS A AND B SHOW OPTIONAL VIEWS FOR END OF TERMINAL LEAD AT EDGE OF PACKAGE. 7. FOR DEVICE OPN CONTAINING W OPTION, DETAIL B ALTERNATE CONSTRUCTION IS NOT APPLICABLE. BOTTOM VIEW NOTE 3 10X 0.5651 10X 0.5000 PITCH 0.3008 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 22 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCV8535/D