INFINEON CFH800

CFH800
P - HEMT
________________________________________________________________________________________________________
Preliminary Datasheet
Features
•
•
•
•
Low noise figure and high associated gain for
high IP3 receiver stages up to 4GHz
Suitable for PCS CDMA and UMTS applications
(F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz)
Low cost miniature package SOT343
LG = 0.4µm; W G = 800µm
Tape and Reel packaging
ESD:
Pin assignment:
1 = gate
2 = source
3 = drain
4 = source
Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Package 1)
CFH 800
N8s
on request
SOT343
Maximum ratings
Symbol
Unit
Drain-source voltage
VDS
5.5
V
Drain-gate voltage
VDG
6.5
V
Gate-source voltage
VGS
-2.0
V
ID
160
mA
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
-65...+150
°C
Total power dissipation (TS < tbd°C) 2)
Ptot
350
mW
RthChS
198
K/W
Drain current
Thermal resistance
Channel-soldering point source
1) Dimensions see page 7
2) TS: Temperature measured at soldering point
Infineon Technologies
pg. 1/7
01.03.2002
WS GS CE GaAs
CFH800
P - HEMT
________________________________________________________________________________________________________
Electrical characteristics at TA = 25°C
unless otherwise specified
Characteristics
Symbol
min
typ
max
Unit
IDSS
0
80
140
mA
VGS(P)
-0.7
-0.25
0.0
V
IG
-
-
10
µA
gm
140
200
-
mS
f = 1.8 GHz
f = 1.8 GHz
F
-
0.56
0.50
1
dB
ID = 10 mA
ID = 30 mA
f = 1.8 GHz
f = 1.8 GHz
Ga
16
15
17
-
dB
ID = 10 mA
ID = 30 mA
f = 1.8 GHz
f = 1.8 GHz
IIP3
-
8.5
13
-
dBm
Drain-source saturation current
VDS = 3 V
VGS = 0 V
Pinch-off voltage
VDS = 3 V
ID = 1 mA
Gate leakage current
VDS = 3 V
ID = 30 mA
Transconductance
VDS = 3 V
ID = 30 mA
Noise figure*
VDS = 3 V
VDS = 3 V
ID = 10 mA
ID = 30 mA
Associated gain*
VDS = 3 V
VDS = 3 V
IIP3*
VDS = 3 V
VDS = 3 V
* Parameters are measured for input impedance for minimum noise figure and output impedance for
maximum gain.
Infineon Technologies
pg. 2/7
01.03.2002
WS GS CE GaAs
CFH800
P - HEMT
________________________________________________________________________________________________________
Typical Common Source S – Parameters
@ 3V; 10mA; Zo = 50Ω
f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
0.1
0.9625
-14.2 11.1164
168.7
0.0338
73.6
0.6449
-15.7
0.2
0.9396
-22 10.9663
163.1
0.0385
72.1
0.6334
-22.4
0.3
0.9166
-33.4 10.6984
155
0.0481
68.9
0.6178
-32.7
0.4
0.8861
-44.6 10.2628
146.9
0.0607
64.2
0.594
-42.2
0.5
0.8513
-54.8
9.74
139.7
0.0725
59.8
0.5711
-51.3
0.6
0.8163
-64.6
9.2192
132.8
0.0825
55.8
0.5428
-59.5
0.7
0.7865
-73.6
8.7366
126.7
0.092
52.8
0.5211
-67.5
0.8
0.7582
-82.5
8.2519
121.1
0.0982
50.2
0.494
-75
0.9
0.7312
-90.6
7.7566
116
0.1035
48.2
0.472
-81.9
1
0.708
-98.4
7.3039
111.1
0.1072
45.4
0.4472
-88.7
1.1
0.6843
-105.7
6.8673
106.4
0.1117
43.5
0.4253
-94.7
1.2
0.6665
-112.8
6.4912
102.1
0.1159
41.1
0.3995
-100.6
1.3
0.6535
-119.1
6.1071
98.1
0.1194
39.9
0.379
-106.3
1.4
0.6451
-125.2
5.7901
94.3
0.1225
38.7
0.3581
-112.7
1.5
0.6368
-130.7
5.4939
90.6
0.1245
37.7
0.3445
-118.4
1.6
0.6299
-136.3
5.2283
87.1
0.1262
36.6
0.3277
-124.5
1.7
0.6246
-141.4
4.9491
83.9
0.1274
35.6
0.3156
-130.7
1.8
0.6208
-146.4
4.7146
80.8
0.1286
35
0.3044
-138
1.9
0.6164
-151.1
4.4907
77.5
0.1302
34.4
0.3001
-144.8
2
0.6147
-155.6
4.2842
74.7
0.1314
34
0.2953
-151.5
2.1
0.6145
-160
4.081
72.1
0.1324
33.3
0.2966
-157.7
2.2
0.6151
-163.8
3.9114
69.3
0.1328
32.9
0.2982
-163.8
2.3
0.6162
-167.7
3.7677
66.3
0.1342
32.6
0.3056
-169.5
2.4
0.6171
-171.1
3.6238
63.5
0.1345
32.5
0.3107
-174.2
2.5
0.6184
-174.8
3.4535
61.1
0.1361
32
0.3205
-178.8
3
0.6168
171.5
2.8397
50.5
0.1374
31.8
0.3641
166.2
3.5
0.612
160.2
2.4102
40.2
0.1387
34
0.3952
158.3
4
0.6154
150.8
2.1095
32.1
0.1422
37.4
0.4028
154.3
4.5
0.6081
142.7
1.9033
23.7
0.1523
40.5
0.3976
150.6
5
0.6042
134.8
1.7615
15
0.1667
41.9
0.3967
145.2
5.5
0.6158
127
1.6573
5.5
0.1839
41
0.3972
137.2
6
0.6341
118.7
1.5577
-5
0.1931
38
0.4
123
Typical Common Source Noise – Parameters
@ 3V; 10mA; Zo = 50Ω
f[GHz]
Fmin [dB]
Ga [dB]
0.9
1.8
2.4
3.0
0.41
0.56
0.61
0.69
18.7
15.6
13.5
11.4
Infineon Technologies
Mag (Γopt ) Phase(Γopt) [deg]
0.33
0.37
0.37
0.38
23
98
136
170
pg. 3/7
Rn/50
0.14
0.10
0.10
0.06
01.03.2002
WS GS CE GaAs
CFH800
P - HEMT
________________________________________________________________________________________________________
Typical Common Source S – Parameters
@ 3V; 20mA; Zo = 50Ω
f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
0.1
0.957
-19.4
15.4898
166.1
0.0257
92.3
0.513
-19.7
0.2
0.9263
-28.6
15.0437
159.5
0.0298
78.5
0.5015
-29.5
0.3
0.8912
-42
14.4003
150
0.0383
67.6
0.4911
-43.3
0.4
0.8527
-55.1
13.5077
141.1
0.0511
63.3
0.4705
-55.8
0.5
0.8069
-66.9
12.5367
133.1
0.0606
58.9
0.4496
-67
0.6
0.7669
-78
11.5987
126
0.0687
54.3
0.4276
-77.2
0.7
0.7328
-87.8
10.7466
119.8
0.0753
51.6
0.4104
-86
0.8
0.7028
-97.3
9.9389
114.3
0.0793
49.2
0.391
-94.7
0.9
0.6782
-105.6
9.2058
109.4
0.0833
47.6
0.3741
-102.2
1
0.6559
-113.5
8.5522
104.6
0.0862
45.5
0.357
-110.1
1.1
0.6367
-120.5
7.967
100.4
0.0899
44.5
0.3423
-116.6
1.2
0.6228
-127.4
7.4486
96.5
0.0927
43.9
0.3275
-123.6
1.3
0.6148
-133.5
6.9662
92.9
0.0958
43.4
0.3147
-129.8
1.4
0.6095
-139.1
6.5399
89.4
0.0981
42.6
0.3029
-137.2
1.5
0.6056
-144.3
6.166
86.1
0.1006
42.1
0.2957
-143.2
1.6
0.6036
-149.4
5.8202
82.9
0.1028
41.9
0.2893
-149.9
1.7
0.603
-153.9
5.5013
79.9
0.1046
41.7
0.2874
-155.7
1.8
0.6027
-158.3
5.2209
77.1
0.1062
41.1
0.2873
-162.7
1.9
0.6031
-162.5
4.9601
74.3
0.1085
40.9
0.2905
-168.5
2
0.6038
-166.5
4.7314
71.6
0.1107
41
0.2939
-174.5
2.1
0.6071
-170.2
4.5082
69.1
0.1126
41
0.3017
-179.4
2.2
0.6095
-173.4
4.3096
66.8
0.1142
40.9
0.3098
175.8
2.3
0.6137
-176.9
4.1146
64.2
0.1156
40.8
0.3214
171.6
2.4
0.6161
179.9
3.9305
61.5
0.1171
41.1
0.3296
167.8
2.5
0.6193
176.7
3.7486
59.2
0.1183
41.2
0.3432
164.4
3
0.6317
164.5
3.0678
49.6
0.1262
42
0.3936
154
3.5
0.6319
154
2.5974
40.6
0.1312
44.1
0.4201
148.5
4
0.6312
145
2.2788
33
0.1405
47.1
0.4252
144.9
4.5
0.6218
137.3
2.0568
24.9
0.1557
49.2
0.4164
141
5
0.6144
129.7
1.8964
16.6
0.1744
49.7
0.4099
135.7
5.5
0.6215
122.6
1.7717
7.3
0.1943
47.7
0.4095
127.8
6
0.6389
115
1.6692
-3.5
0.2042
42.8
0.4137
114
Typical Common Source Noise – Parameters
@ 3V; 20mA; Zo = 50Ω
f[GHz]
Fmin [dB]
Ga [dB]
0.9
1.8
2.4
3.0
0.39
0.52
0.57
0.69
20.4
16.5
13.6
12
Infineon Technologies
Mag (Γopt ) Phase(Γopt) [deg]
0.28
0.36
0.38
0.40
36
115
134
175
pg. 4/7
Rn/50
0.11
0.09
0.08
0.06
01.03.2002
WS GS CE GaAs
CFH800
P - HEMT
________________________________________________________________________________________________________
Typical Common Source S – Parameters
@ 3V; 30mA; Zo = 50Ω
f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
0.1
0.9654
-20 18.0171
164.6
0.0133
29.7
0.4513
-22.9
0.2
0.9138
-30.7 17.3207
157.5
0.0222
56.2
0.4306
-34.6
0.3
0.8673
-46.5 16.3632
147.3
0.0373
65.4
0.4156
-51.6
0.4
0.8224
-61 15.1455
138
0.0472
61.9
0.405
-65.2
0.5
0.7789
-73.5 13.8972
129.8
0.0555
58.7
0.3886
-77.3
0.6
0.7403
-85.1
12.708
122.7
0.0619
54.9
0.3734
-88.4
0.7
0.7062
-95.1 11.6667
116.5
0.0663
52.3
0.3624
-97.8
0.8
0.6772
-104.5
10.683
111.1
0.0712
50.5
0.3507
-106.9
0.9
0.6531
-112.7
9.828
106.4
0.0748
49.1
0.3377
-114.3
1
0.6348
-120.4
9.0566
102
0.079
47.4
0.3262
-122.3
1.1
0.6211
-127.3
8.3928
98
0.0818
46.5
0.3153
-129.1
1.2
0.6105
-133.9
7.8152
94.1
0.0842
46
0.305
-136
1.3
0.6033
-139.5
7.2867
90.5
0.0872
45.9
0.2968
-142.2
1.4
0.5994
-145
6.8305
87.1
0.09
45.2
0.2902
-149.2
1.5
0.597
-149.9
6.4218
84
0.0928
45.4
0.2884
-155.1
1.6
0.5958
-154.8
6.0636
81.1
0.0948
45
0.2853
-161.6
1.7
0.5955
-159.1
5.7329
78.2
0.0973
45.3
0.2866
-167.2
1.8
0.5967
-163.3
5.4261
75.4
0.0996
45.3
0.2892
-173.6
1.9
0.5991
-167.2
5.1489
72.6
0.1012
45.8
0.2968
-178.7
2
0.6022
-170.9
4.8835
70.2
0.1029
45.9
0.3037
176.3
2.1
0.6071
-174.4
4.6448
67.8
0.1049
45.8
0.3129
172
2.2
0.6114
-177.4
4.4241
65.4
0.1074
45.3
0.3223
167.9
2.3
0.6159
179.4
4.2115
63.1
0.1092
45.1
0.3351
164.2
2.4
0.6176
176.5
4.0336
60.8
0.1116
44.9
0.3455
161
2.5
0.6201
173.5
3.8571
58.7
0.1131
45.4
0.3592
158.3
3
0.6346
161.8
3.1643
49.3
0.1225
47.1
0.4066
149.6
3.5
0.6381
151.7
2.6828
40.4
0.1314
49
0.4351
144.5
4
0.6421
142.7
2.3404
33.2
0.1407
51.4
0.44
141.5
4.5
0.6281
135.1
2.1167
25.4
0.158
52.7
0.4268
137.7
5
0.6189
127.5
1.9576
17.4
0.1779
52.4
0.4206
132
5.5
0.6244
120.8
1.8288
7.7
0.1996
49.9
0.4179
124
6
0.6394
113.5
1.7148
-2.4
0.2085
44.3
0.4245
110.7
Typical Common Source Noise – Parameters
@ 3V; 30mA; Zo = 50Ω
f[GHz]
Fmin [dB]
Ga [dB]
Mag (Γopt )
Phase(Γopt)
[deg]
Rn/50
0.9
1.8
2.4
3.0
0.38
0.52
0.56
0.65
21.1
16.8
14.0
12.2
0.30
0.39
0.42
0.43
45
125
145
179
0.09
0.08
0.07
0.06
Infineon Technologies
pg. 5/7
01.03.2002
WS GS CE GaAs
CFH800
P - HEMT
________________________________________________________________________________________________________
Typical Common Source S – Parameters
@ 5V; 50mA; Zo = 50Ω
f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
0.1
0.9304
-23.8 20.5744
162.4
0.0224
99.5
0.4514
-30.4
0.2
0.8794
-34.8 19.5344
155
0.028
78.6
0.4204
-41
0.3
0.8331
-51.1 18.1654
144.2
0.0388
64.1
0.3928
-57.1
0.4
0.7848
-66.2 16.6331
134.5
0.0451
58.3
0.3777
-71.1
0.5
0.7407
-79.4 15.0631
126.5
0.0519
56
0.3613
-83.4
0.6
0.7021
-91.1 13.6278
119.6
0.0564
52.8
0.3467
-94.6
0.7
0.6735
-101.2 12.3385
113.5
0.0602
51.2
0.3358
-104.2
0.8
0.6475
-110.5 11.2236
108.2
0.0638
50
0.3252
-113.1
0.9
0.6272
-118.7 10.2679
103.5
0.0675
50
0.3148
-120.6
1
0.6112
-126.5
9.4523
99.4
0.0712
49.1
0.3054
-128.5
1.1
0.6001
-133.2
8.7468
95.6
0.0735
48
0.296
-135.3
1.2
0.5925
-139.6
8.1191
92
0.0765
48.1
0.2882
-142.2
1.3
0.5881
-144.9
7.5775
88.7
0.0788
47.9
0.2813
-148.2
1.4
0.5854
-150
7.0782
85.6
0.0824
48.2
0.2768
-154.7
1.5
0.5851
-154.6
6.6593
82.4
0.0847
48.2
0.275
-160.4
1.6
0.5855
-159.2
6.2687
79.4
0.0877
48.4
0.2741
-166.6
1.7
0.5877
-163.2
5.921
76.6
0.0891
48.6
0.2766
-172.2
1.8
0.589
-167.1
5.5885
74.1
0.091
48.8
0.2803
-178
1.9
0.5924
-170.9
5.2758
71.4
0.0921
49.1
0.2885
177.1
2
0.5962
-174.4
5.0084
69
0.0953
49.1
0.295
172.2
2.1
0.6024
-177.6
4.7644
66.8
0.0986
48.8
0.3049
168.1
2.2
0.6069
179.6
4.5556
64.6
0.1016
48.9
0.3143
164
2.3
0.6123
176.6
4.351
62.3
0.1045
49.4
0.3278
160.9
2.4
0.6156
174
4.1578
59.8
0.1065
49.6
0.338
158.1
2.5
0.618
171
3.9735
57.7
0.1088
49.4
0.3511
155.9
3
0.6359
160.1
3.238
48.8
0.119
50.2
0.4005
147.7
3.5
0.6397
150.2
2.7451
40.4
0.1285
52.1
0.4286
143.1
4
0.6464
141.4
2.4056
33.1
0.1404
54.1
0.4319
140.4
4.5
0.6341
134.1
2.1792
25.5
0.1573
55.6
0.421
136.8
5
0.6227
126.4
2.0069
17.3
0.1778
55.2
0.4123
131.3
5.5
0.627
120
1.8774
7.7
0.1994
51.8
0.4089
123.4
6
0.6456
112.5
1.7629
-2.4
0.2098
46.9
0.4157
110.2
Typical Common Source Noise – Parameters
@ 5V; 50mA; Zo = 50Ω
f[GHz]
Fmin [dB]
Ga [dB]
0.9
1.8
2.4
3.0
0.44
0.53
0.59
0.69
21.3
16.9
14.1
12.3
Infineon Technologies
Mag (Γopt ) Phase(Γopt) [deg]
0.32
0.45
0.47
0.44
44
122
144
178
pg. 6/7
Rn/50
0.08
0.07
0.07
0.06
01.03.2002
WS GS CE GaAs
P - HEMT
CFH800
________________________________________________________________________________________________________
Semiconductor Device Outline SOT343
Pin assignment:
1 = gate
2 = source
3 = drain
4 = source
Published by Infineon Technologies AG, Marketing-Communication, St.-Martin-Strasse 53,
D-81541 München.
copyright Infineon Technologies AG 2000. All Rights Reserved.
As far as patents or other rights of third parties are concerned, liability is only assumed for
components per se, not for applications, processes and cirucits implemented within
components or assemblies.
The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery, and prices please contact the Offices of Semiconductor
Group in Germany or the Infineon Technologies Companies and Representatives worldwide
(see address list).
Due to technical requirements components may contain dangerous substances. For information
on the type in question please contact your nearest Infineon Technologies Office.
Infineon Technologies AG is an approved CECC manufacturer.
Infineon Technologies
pg. 7/7
01.03.2002
WS GS CE GaAs