Composite Transistors XN6537 Silicon NPN epitaxial planer transistor Unit: mm For wide-band low-noise amplification +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage Rating Emitter to base voltage of element Collector current VCEO 12 V VEBO 2.5 V IC 30 mA Peak collector current ICP 50 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) ■ Electrical Characteristics Parameter 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 7H Internal Connection 6 Tr1 1 2 5 4 *1 +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings 1.45±0.1 +0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 0.95 2 0.16–0.06 2SC3110 × 2 elements 5 0.95 +0.2 2.9 –0.05 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 1.9±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.8 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 Tr2 3 (Ta=25˚C) Symbol Conditions min Collector cutoff current ICBO VCB = 10V, IE = 0 Emitter cutoff current IEBO VEB = 2V, IC = 0 Forward current transfer ratio hFE VCE = 10V, IC = 10mA 40 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 10V, IC = 10mA 0.5 Transition frequency fT VCE = 10V, IC = 10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Forward transfer gain | S21e |2 VCE = 10V, IC = 20mA, f = 0.8GHz typ max Unit 100 nA 1 µA 0.99 4.5 GHz 1.2 12 pF dB Power gain GUM VCE = 10V, IC = 20mA, f = 0.8GHz 14 dB Noise figure NF VCE = 10V, IC = 5mA, f = 0.8GHz 1.3 dB Ratio between 2 elements 1 Composite Transistors XN6537 PT — Ta IC — VCE 500 IC — VBE 30 60 200 100 20 IB=300µA 250µA 15 200µA 10 150µA 100µA 5 –25˚C 30 20 10 80 120 0 160 0 0 2 4 10 12 0 0.4 0.8 hFE — IC 10 3 1 0.3 25˚C Ta=75˚C 1.6 2.0 fT — IC 8 VCE=10V Forward current transfer ratio hFE 30 1.2 Base to emitter voltage VBE (V) 240 IC/IB=10 0.03 8 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 0.1 6 VCE=10V Ta=25˚C Transition frequency fT (GHz) 40 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Ta=75˚C 40 50µA 0 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 6 4 2 –25˚C 0.01 0.1 1 0.3 3 10 30 0 0.1 100 1 0.3 Cob — VCB 1.2 10 30 0.4 100 Collector to base voltage VCB (V) –100 1.5 2 VCE=10V IC=20mA E: earth 3 4 6 0.2 5 10 5 .2 0 .4 .6 .8 1 800MHz 500MHz 4 3 1.5 2 3 4 5 10 1000MHz S11 1000MHz S22 800MHz 500MHz –10 –5 –4 –0.2 2 –3 –0.4 –2 –0.6 –0.8 0 30 –30 0.4 1 10 1 0.8 0.6 0.2 0 –10 S11, S22 Rg=50Ω VCE=10V f=800MHz 7 Noise figure NF (dB) 0.6 3 –3 Collector current IC (mA) NF — IC 0.8 1 0 –1 100 8 f=1MHz IE=0 Ta=25˚C 1.0 3 Collector current IC (mA) Collector current IC (mA) Collector output capacitance Cob (pF) 25˚C 50 Collector current IC (mA) 300 0 2 VCE=10V 25 400 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C 1 3 10 30 Collector current IC (mA) 100 –1 –1.5 Composite Transistors XN6537 S12, S21 +90˚ +120˚ 1000MHz 800MHz S21 500MHz +150˚ VCE=10V IC=20mA E: earth +60˚ +30˚ 800MHz 1000MHz ±180˚ –10 –15 –20 –25 –30 5 500MHz 10 15 S12 –150˚ 20 0˚ –30˚ –120˚ –60˚ –90˚ 3