IRF IRL2203NLPBF

PD - 95219
IRL2203NSPbF
IRL2203NLPbF
l
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
100% RG Tested
Lead-Free
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 7.0mΩ
G
ID = 116A‡
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2203NL) is available for low-profile applications.
D2Pak
IRL2203NS
TO-262
IRL2203NL
Absolute Maximum Ratings
Symbol
Parameter
Max
PD @TA = 25°C Power Dissipation
PD @TC = 25°C Power Dissipation
VGS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
116 ‡
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
IDM
82
400
A
3.8
180
W
W
1.2
± 16
60
18
W/°C
V
A
mJ
5.0
V/ns
-55 to + 175
°C
300 (1.6mm from case)
Thermal Resistance
Symbol
RθJC
RθJA
www.irf.com
Junction-to-Case ‰
Parameter
Junction-to-Ambient (PCB mount, steady state) ˆ‰
Typ
Max
Units
–––
–––
0.85
40
°C/W
1
04/27/04
IRL2203NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min
Typ
Max Units
30
–––
–––
Breakdown Voltage Temp. Coefficient
–––
0.029
–––
V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
–––
–––
7.0
VGS = 10V, ID = 60A „
–––
–––
10
1.0
–––
3.0
V
S
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
73
–––
–––
–––
–––
25
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
V
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 48A „
µA
nA
VDS = VGS, ID = 250µA
VDS = 25V, ID = 60A „
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
Qg
Total Gate Charge
–––
–––
60
Qgs
Gate-to-Source Charge
–––
–––
14
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
33
RG
Gate Resistance
0.2
–––
3.0
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 15V
tr
Rise Time
–––
160
–––
ID = 60A
td(off)
Turn-Off Delay Time
–––
23
–––
RG = 1.8Ω
tf
Fall Time
–––
66
–––
VGS = 4.5V, See Fig. 10 „
LD
Internal Drain Inductance
–––
4.5
–––
ID = 60A
nC
VGS = 4.5V, See Fig. 6 and 13
Ω
Between lead,
Nh
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Input Capacitance
–––
3290
–––
Coss
Output Capacitance
–––
1270
–––
Crss
Reverse Transfer Capacitance
Single Pulse Avalanche Energy ‚
–––
EAS
170
–––
––– 1320 … 290 †
VDS = 24V
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
pF
VDS = 25V
mJ
IAS = 60A, L = 0.16mH
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min
Typ
Max Units
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
(Body Diode) 
Diode Forward Voltage
trr
Reverse Recovery Time
–––
56
84
ns
Qrr
Reverse Recovery Charge
–––
110
170
nC
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 0.16mH RG = 25Ω,
IAS = 60A, VGS=10V (See Figure 12)
ƒ ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
–––
–––
116 ‡
–––
–––
400
–––
–––
1.2
Conditions
MOSFET symbol
A
V
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 60A, VGS = 0V „
TJ = 25°C, IF = 60A
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C
www.irf.com
IRL2203NS/LPbF
1000
1000
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
100
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
10
2.7V
20µs PULSE WIDTH
T = 25 C
°
J
1
0.1
1
10
2.7V
10
100
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 175 ° C
100
V DS = 15V
20µs PULSE WIDTH
4.0
5.0
6.0
Fig 3. Typical Transfer Characteristics
www.irf.com
7.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
3.0
1
10
100
Fig 2. Typical Output Characteristics
1000
VGS , Gate-to-Source Voltage (V)
°
J
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
2.0
20µs PULSE WIDTH
T = 175 C
1
0.1
ID = 100A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRL2203NS/LPbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
5000
4000
Ciss
3000
C
oss
2000
1000
15
VGS , Gate-to-Source Voltage (V)
6000
ID = 60A
VDS = 24V
VDS = 15V
12
9
6
3
Crss
0
1
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
20
VDS , Drain-to-Source Voltage (V)
10000
ID , Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
10
0.1
0.0
TJ = 25 ° C
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
80
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
TJ = 175 ° C
1
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
40
Q G , Total Gate Charge (nC)
2.4
100
100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRL2203NS/LPbF
120
LIMITED BY PACKAGE
VDS
I D , Drain Current (A)
100
VGS
RD
D.U.T.
RG
+
-VDD
80
VGS
60
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRL2203NS/LPbF
L
VD S
D .U .T
RG
IA S
2V0GS
V
tp
D R IV E R
+
- VD D
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
EAS , Single Pulse Avalanche Energy (mJ)
600
1 5V
ID
24A
42A
60A
TOP
500
BOTTOM
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRL2203NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
www.irf.com
7
IRL2203NS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H I S IS AN IR F 53 0 S WIT H
L OT COD E 8 02 4
AS S E MB L E D ON WW 0 2 , 2 00 0
IN T H E AS S E MB L Y L IN E "L "
IN T E R N AT ION AL
R E CT IF IE R
L OGO
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
P AR T N U MB E R
F 53 0S
AS S E MB L Y
L OT COD E
D AT E COD E
YE AR 0 = 200 0
WE E K 02
L IN E L
OR
INT E R NAT ION AL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT COD E
8
P AR T N U MB E R
F 53 0S
DAT E COD E
P = DE S IGNAT E S L E AD -F R E E
P R ODU CT (OP T IONAL )
YE AR 0 = 2000
WE E K 02
A = AS S E MB L Y S IT E COD E
www.irf.com
IRL2203NS/LPbF
TO-262 Package Outline
TO-262 Part Marking Information
E XAMP L E :
T H IS IS AN IR L 3103L
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P " in as s embly line
pos ition indicates "L ead-F ree"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
P AR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
OR
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
www.irf.com
P AR T NU MB E R
DAT E CODE
P = DE S IGNAT E S L E AD-F R E E
P R ODU CT (OP T IONAL )
YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E CODE
9
IRL2203NS/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IR E C T IO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 5 .4 2 (.6 0 9 )
1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TRL
1 0 .9 0 (.4 2 9 )
1 0 .7 0 (.4 2 1 )
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
4 .7 2 (.1 3 6 )
4 .5 2 (.1 7 8 )
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
F E E D D IR E C T IO N
1 3 .5 0 (.5 3 2 )
1 2 .8 0 (.5 0 4 )
2 7 .4 0 (1 .0 7 9 )
2 3 .9 0 (.9 4 1 )
4
330.00
(1 4.17 3)
M AX.
NOTES :
1 . C O M F O R M S T O E IA -4 1 8 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
3 . D IM E N S IO N M E A S U R E D @ H U B .
4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
6 0 .0 0 (2 .3 6 2)
M IN .
26 .40 (1.03 9)
24 .40 (.961 )
3
3 0 .4 0 (1 .1 9 7 )
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/04
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/