IRF IRF7456PBF

PD - 95249
IRF7456PbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
High Frequency DC-DC Converters
with Synchronous Rectification
l Lead-Free
l
Benefits
Ultra-Low RDS(on) at 4.5V VGS
l Low Charge and Low Gate Impedance to
Reduce Switching Losses
l Fully Characterized Avalanche Voltage
and Current
l
VDSS
RDS(on) max
ID
20V
0.0065Ω
16A
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
20
± 12
16
13
130
2.5
1.6
0.02
-55 to + 150
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient„
Max.
Units
50
°C/W
Typical SMPS Topologies
l
Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes  through „ are on page 8
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1
10/12/04
IRF7456PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
0.024 ––– V/°C Reference to 25°C, ID = 1mA
0.00470.0065
VGS = 10V, ID = 16A ƒ
Ω
0.00570.0075
VGS = 4.5V, ID = 13A ƒ
0.011 0.020
VGS = 2.8V, ID = 3.5A ƒ
––– 2.0
V
VDS = VGS, ID = 250µA
––– 20
VDS = 16V, VGS = 0V
µA
––– 100
VDS = 16V, VGS = 0V, TJ = 125°C
––– 200
VGS = 12V
nA
––– -200
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
41
9.7
18
20
25
50
52
3640
1570
330
Max. Units
Conditions
–––
S
VDS = 10V, ID = 16A
62
ID = 16A
15
nC
VDS = 16V
27
VGS = 5.0V, ƒ
–––
VDD = 10V
–––
ID = 1.0A
ns
–––
RG = 6.0Ω
–––
VGS = 4.5V ƒ
–––
VGS = 0V
–––
VDS = 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
250
16
0.25
mJ
A
mJ
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.5
–––
–––
130
–––
–––
–––
–––
48
74
A
1.2
72
110
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.5A, VGS = 0V
TJ = 25°C, IF = 2.5A
di/dt = 100A/µs ƒ
D
S
ƒ
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IRF7456PbF
1000
1000
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
100
100
10
1
2.0V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1
10
10
2.0V
1
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100.0
ID, Drain-to-Source Current (Α)
T J = 150°C
10.0
T J = 25°C
1.0
VDS = 15V
20µs PULSE WIDTH
2.2
2.4
2.6
2.8
3.0
1
10
100
Fig 2. Typical Output Characteristics
2.0
0.1
20µs PULSE WIDTH
TJ = 150 °C
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
2.0
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM 2.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
3.2
ID = 16A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7456PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
4000
Ciss
3000
Coss
2000
1000
ID = 16A
VDS = 16V
10
8
6
4
2
Crss
0
1
10
0
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
20
VDS , Drain-to-Source Voltage (V)
60
80
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
TJ = 150 ° C
10us
100
10
TJ = 25 ° C
1
100us
1ms
10
10ms
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
40
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
5000
12
VGS , Gate-to-Source Voltage (V)
6000
2.2
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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Fig 6. On-Resistance Vs. Drain Current
IRF7456PbF
20
ID , Drain Current (A)
VDS
VGS
15
RG
RD
D.U.T.
+
-V DD
10V
10
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
td(on)
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
0.1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7456PbF
RDS(on) , Drain-to -Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.0062
VGS = 4.5V
0.0058
0.0054
0.0050
VGS = 10V
0.0046
0
20
40
60
80
100
0.012
0.010
0.008
ID = 16A
0.006
0.004
0
ID , Drain Current (A)
4
8
12
16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
600
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
500
BOTTOM
ID
7.2A
10A
16A
400
300
200
100
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7456PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
8X b
0.25 [.010]
A
MILLIMET ERS
MAX
A
5
INCHES
MIN
MAX
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
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IRF7456PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 2.0mH
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board, t<10 sec
RG = 25Ω, IAS = 16A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
8
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