Previous Datasheet Index Next Data Sheet PD - 2.437A 10BQ100 SCHOTTKY RECTIFIER 1 Amp Major Ratings and Characteristics Characteristics 10BQ100 Units IF(AV) Rectangular waveform 1.0 A VRRM 100 V IFSM @ tp = 5µs sine 780 A VF @ 1.0Apk, T J = 125°C 0.62 V -55 to 175 °C TJ Description / Features The 10BQ100 surface-mount Schottky rectifier has been designed for applications requiring very low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging and reverse battery protection. • Small footprint, surface mountable • Very low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long-term reliability SMB CASE STYLE CASE OUTLINE 275 To Order Previous Datasheet Index Next Data Sheet 10BQ100 Voltage Ratings Part number VR 10BQ100 Max. DC Reverse Voltage (V) 100 VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters IF(AV) 10BQ Units Conditions Max. Average Forward Current 1.0 A 50% duty cycle @ TC = 152°C, rectangular waveform Max. Peak One Cycle Non - Repetitive 780 A 5µs Sine or 3µs Rect. pulse Following any rated load condition Surge Current — see Fig. 7 38 10ms Sine 0r 6ms Rect. pulse and with rated VRRM applied. EAS Non - Repetitive Avalanche Energy 9.7 mJ IAR Repetitive Avalanche Current 1.0 A See Fig. 5 IFSM T J = 25°C, IAS = 1.0A, L = 11mH Current decaying linearly to zero in 1µsec Frequency limited by TJ max. VA = 1.5 X VR typical Electrical Specifications Parameters VFM IRM 10BQ Units Max. Forward Voltage Drop 0.78 V @ 1.0A Conditions See Fig. 1 0.87 V @ 2.0A 0.62 V @ 1.0A 0.70 V @ 2.0A Max. Reverse Leakage Current 0.5 mA T J = 25°C See Fig. 2 1.0 mA T J = 125°C T J = 25°C T J = 125°C VR = rated VR CT Max. Junction Capacitance 42 pF VR = 5VDC, (test signal range 100KHz to 1MHz) 25°C LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change 10,000 V/µs (Rated VR) Thermal-Mechanical Specifications 10BQ Units TJ Max.Junction Temperature Range Parameters -55 to 175 °C T STG Max. Storage Temperature Range -55 to 175 °C 140 °C/W DC operation — See Fig. 4 36 °C/W DC operation RthJA Max. Thermal Resistance, Junction Conditions to Ambient RthJL Max. Thermal Resistance, Junction to Lead ➁ wt Approximate Weight Case Style 0.10 g SMB Similar to DO-214AA Pulse Width < 300µs, Duty Cycle < 2% ➁ Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package 276 To Order Previous Datasheet Index Next Data Sheet 10BQ100 10 TJ = 175 °C TJ = 125 °C TJ = TJ = 1 7 5 °C 1 5 0°C 1 1 2 5°C 0.1 1 0 0°C 7 5°C 0 .01 5 0°C 0.0 0 1 2 5°C 0 .0 00 1 0 .0 0 00 1 0 25 °C 20 1 40 60 80 100 R e v e rs e V o lta ge - V R (V ) Fig. 2 Typical Values of Reverse Current Vs. Reverse Voltage 0.1 0.2 0.4 0.6 0.8 F or w a rd V o lta ge D rop - V FM J u n c tio n C a p a c itan c e - C T (p F ) 100 1.0 (V ) TJ = 2 5 °C 10 Fig. 1 Max. Forward Voltage Drop Characteristics 0 20 40 60 80 100 R e v e rs e V o lta g e - V R ( V ) Fig. 3 Typical Junction CapacitanceVs. Reverse Voltage thJL (°C /W ) 1 00 Thermal Imped ance - Z Ins ta nta neo u s F orw ard C urre nt - I F (A ) R e ve rs e C u rre n t - I R (m A ) 10 D = 0.50 D = 0 .33 10 D = 0.25 PD M D = 0.17 D = 0.08 t 1 t 2 N otes : 1. D uty fa c tor D = t / t 1 2 1 S ing le Pulse (The rmal R esista nce ) 2. P ea k TJ = P DM x Z thJ C + TC 0.1 0 .0000 1 0.0 001 0 .0 01 0.01 0.1 1 10 t , Re cta n gular Pu lse D uratio n (S e con ds) 1 Fig. 4 Max. Thermal Impedance ZthJL Characteristics 277 To Order 10 0 Previous Datasheet Index Next Data Sheet 10BQ100 1 .0 0 1 0B Q 10 0 R th J C (D C ) = 3 6 °C /W 170 A verage P ow er L oss - (W a tts) A llo w a b le C a s e T e m p e ra tu re - (°C ) 180 160 DC 150 140 130 0 0 .4 0 .8 1 .2 D D D 0 .8 0 D D 0.0 8 0.1 7 0.2 5 0.3 3 0.5 0 0 .6 0 DC 0 .4 0 R M S L im it 0 .2 0 0 .0 0 1 .6 0 A ve ra g e F o rw a rd C u rre n t - I F (A V ) (A ) 0 .4 0 .8 1 .2 1 .6 A verage F o rw ard C urrent - I F(A V) (A ) Fig. 5 Max. Allowable Case Temperature Vs. Average Forward Current N o n - R e p e titiv e S u rg e C u rre n t - I FS M (A ) = = = = = Fig. 6 Forward Power Loss Characteristics 1000 A t A n y R a te d L oa d C o n d itio n A n d W ith R a te d V R R M A p p lie d Fo llo w in g S u rg e L H IG H -S P E E D S W IT C H D UT 100 BRD R g = 2 5 oh m C U RR E NT M O N IT O R F R E E -W H E E L D IO D E 4 0H FL 40 S 0 2 + V d = 25 V o lt 10 10 100 1000 1 00 0 0 S q u a re W a v e P u lse D u ra tio n - t p (m ic ro s e c) Fig.7 Max. Non-Repetitive Surge Current Fig. 8 Unclamped Inductive Test Circuit Refer to the Appendix Section for the following: Appendix D: Tape and Reel Information — See page 338. 278 To Order