IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS(on),max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications Type IPI60R099CPA Package Marking PG-TO262-3-1 6R099A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID Value T C=25 °C 31 T C=100 °C 19 Pulsed drain current1) I D,pulse T C=25 °C 93 Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 800 Avalanche energy, repetitive t AR1),2) E AR I D=11 A, V DD=50 V 1.2 Avalanche current, repetitive t AR1),2) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage Unit A mJ 11 A V DS=0...480 V 50 V/ns V GS static ±20 V Power dissipation P tot T C=25 °C 255 W Operating temperature Tj -40 … 150 °C Storage temperature T stg -40 ... 150 Rev. 2.1 page 1 2009-03-25 IPI60R099CPA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Diode pulse current1) I S,pulse Reverse diode dv /dt 3) dv /dt Parameter Symbol Conditions Value Unit 18 T C=25 °C A 93 V/ns Values Unit ed nd me ns om sig ec de tr w e no rn fo 15 min. typ. max. - - 0.5 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C Soldering temperature, reflow soldering T sold MSL1, reflow acc. to IPC-JEDEC J-STD020C - - 245 °C V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=V GS, I D=1.2 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 5 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=18 A, T j=25 °C - 0.09 0.105 Ω V GS=10 V, I D=18 A, T j=150 °C - 0.24 - f =1 MHz, open drain - 1.3 - Gate resistance Rev. 2.1 RG page 2 Ω 2009-03-25 IPI60R099CPA Parameter Values Symbol Conditions Unit min. typ. max. - 2800 - - 130 - - 130 - Dynamic characteristics C iss Output capacitance C oss V GS=0 V, V DS=100 V, f =1 MHz ed nd me ns om sig ec de tr w e no rn fo Input capacitance Effective output capacitance, energy C o(er) related4) pF V GS=0 V, V DS=0 V to 480 V Effective output capacitance, time related5) C o(tr) - 340 - Turn-on delay time t d(on) - 10 - Rise time tr - 5 - - 60 - V DD=400 V, V GS=10 V, I D=18 A, R G=3.3 Ω ns Turn-off delay time t d(off) Fall time tf - 5 - Gate to source charge Q gs - 14 - Gate to drain charge Q gd - 20 - Gate charge total Qg - 60 80 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 450 - ns - 12 - µC - 70 - A Gate Charge Characteristics V DD=400 V, I D=18 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=18 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) Pulse width t p limited by T j,max 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) I SD≤I D, di/dt≤100A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low side and high side switch 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.1 page 3 2009-03-25 IPI60R099CPA 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 300 10 µs limited by on-state resistance ed nd me ns om sig ec de tr w e no rn fo 100 µs 101 1 ms DC I D [A] P tot [W] 200 1 µs 10 ms 100 100 10-1 0 0 40 80 120 100 160 101 T C [°C] 102 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics ZthJC=f(tP) I D=f(V DS); T j=25 °C parameter: D=t p/T 100 103 parameter: V GS 120 105 90 0.5 10 V 20 V 8V 7V 10-1 0.2 I D [A] Z thJC [K/W] 75 60 6V 0.1 45 0.05 5.5 V 30 0.02 5V 0.01 15 single pulse 4.5 V 10-2 10-5 0 10-4 10-3 10-2 10-1 100 t p [s] Rev. 2.1 0 5 10 15 20 V DS [V] page 4 2009-03-25 IPI60R099CPA 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 50 0.5 7V 8V 10 V 20 V 6V 0.4 R DS(on) [Ω] I D [A] 30 ed nd me ns om sig ec de tr w e no rn fo 5.5 V 40 5V 20 5.5 V 0.3 6V 6.5 V 7V 5V 20 V 0.2 4.5 V 10 0.1 0 0 0 5 10 15 20 0 10 20 V DS [V] 30 40 50 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=18 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.3 160 0.25 25 °C 120 I D [A] R DS(on) [Ω] 0.2 0.15 80 98 % 150 °C typ 0.1 40 0.05 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 2.1 0 2 4 6 8 10 V GS [V] page 5 2009-03-25 IPI60R099CPA 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=18 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 25 °C, 98% 150 °C, 98% ed nd me ns om sig ec de tr w e no rn fo 8 25 °C 120 V 150 °C 400 V I F [A] V GS [V] 6 101 4 100 2 10-1 0 0 10 20 30 40 50 0 60 0.5 1 Q gate [nC] 12 Drain-source breakdown voltage E AS=f(T j); I D=11 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 700 660 V BR(DSS) [V] E AS [mJ] 600 400 200 620 580 0 540 25 75 125 175 T j [°C] Rev. 2.1 2 V SD [V] 11 Avalanche energy 800 1.5 -60 -20 20 60 100 140 180 T j [°C] page 6 2009-03-25 IPI60R099CPA 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 20 104 16 ed nd me ns om sig ec de tr w e no rn fo 105 Ciss 103 E oss [µJ] C [pF] 12 Coss 2 10 101 8 4 Crss 100 0 0 100 200 300 400 500 V DS [V] Rev. 2.1 0 100 200 300 400 500 600 V DS [V] page 7 2009-03-25 IPI60R099CPA Definition of diode switching characteristics ed nd me ns om sig ec de tr w e no rn fo Rev. 2.1 page 8 2009-03-25 IPI60R099CPA PG-TO262-3-1: Outlines ed nd me ns om sig ec de tr w e no rn fo written approval of Infineon Technologies, if a failure of such components can reasonably be expected to user or other persons may be endangered. Dimensions in mm/inches Rev. 2.1 page 9 2009-03-25 IPI60R099CPA Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. ed nd me ns om sig ec de tr w e no rn fo Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 10 2009-03-25 NOTIFICATION N° 040/10 Information on N-Channel MOSFET products designed for automotive applications ed nd me ns om sig ec de tr w e no rn fo Products affected: Dear Customer, SalesName IPB60R099CPA IPB60R199CPA IPB60R299CPA IPC60R075CPA IPI60R099CPA IPP60R099CPA IPW60R045CPA IPW60R075CPA IPW60R099CPA Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 Bare Die PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 PG-TO247-3-41 The devices listed for this notification are sensitive to hard commutation of the conducting body diode. This operating condition can occur in half-bridge configurations used in ZVS phase shift and resonant switching PWM converters. Using the device under such conditions may result in violation of the datasheet specification limits and may lead to permanent damage of the device. Please take care that in the context of the application described above the datasheet limits are not exceeded. Best Regards Michael Paulu If you have any questions, please do not hesitate to contact your local Sales office. 2010-05-12 Page 1 of 1