IPA60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x QG 650 0.385 Ω R DS(on),max • Ultra low gate charge V Q g,typ 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications PG-TO220-3-31 • Pb-free lead plating; RoHS compliant CoolMOS is specially designed for: • Hard switching SMPS topologies Type Package Ordering Code Marking IPA60R385CP PG-TO220-3-31 SP000089316 6R385P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current 2) ID Value T C=25 °C 9.0 T C=100 °C 5.7 Pulsed drain current3) I D,pulse T C=25 °C 27 Avalanche energy, single pulse E AS I D=3.4 A, V DD=50 V 227 Avalanche energy, repetitive t AR3)4) E AR I D=3.4 A, V DD=50 V 0.3 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Mounting torque Rev. 1.5 Unit A mJ 3 A V DS=0...480 V 50 V/ns static ±20 V AC (f >1 Hz) ±30 T C=25 °C 31 W -55 ... 150 °C M2.5 screws page 1 50 Ncm 2006-01-04 IPA60R385CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current 2) IS Diode pulse current 3) I S,pulse Reverse diode dv /dt 5) dv /dt Parameter Symbol Conditions Value Unit 5.2 T C=25 °C A 27 15 V/ns Values Unit min. typ. max. - - 4 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 80 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=V GS, I D=0.34 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 1 V DS=600 V, V GS=0 V, T j=150 °C - 10 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=5.2 A, T j=25 °C - 0.35 0.385 Ω V GS=10 V, I D=5.2 A, T j=150 °C - 0.94 - f =1 MHz, open drain - 1.8 - Gate resistance Rev. 1.5 RG page 2 Ω 2006-01-04 IPA60R385CP Parameter Values Symbol Conditions Unit min. typ. max. - 790 - - 38 - - 36 - - 96 - - 10 - - 5 - - 40 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related6) C o(er) Effective output capacitance, time related7) C o(tr) Turn-on delay time t d(on) Rise time tr Turn-off delay time t d(off) Fall time tf - 5 - Gate to source charge Q gs - 4 - Gate to drain charge Q gd - 6 - Gate charge total Qg - 17 22 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 260 - ns - 3.1 - µC - 24 - A V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=12 A, R G=3.3 Ω pF ns Gate Charge Characteristics V DD=400 V, I D=5.2 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=5.2 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Limited only by maximum temperature 3) Pulse width t p limited by T j,max 4) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 5) ISD<=ID, di/dt<=400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch. 6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 1.5 page 3 2006-01-04 IPA60R385CP 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 35 limited by on-state resistance 30 1 µs 25 10 µs 20 100 µs I D [A] P tot [W] 101 15 1 ms 10 ms 100 10 DC 5 0 0 40 80 120 10-1 160 100 101 T C [°C] 102 103 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics Z thJC=f(t P) I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 101 25 20 V 10 V 0.5 8V 20 7V 0.2 100 6V 15 I D [A] Z thJC [K/W] 0.1 0.05 0.02 10-1 5.5 V 10 0.01 5V single pulse 5 4.5 V 0 10-2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 5 10 15 20 V DS [V] t p [s] Rev. 1.5 0 page 4 2006-01-04 IPA60R385CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 1.6 16 8V 7V 14 10 V 1.4 6V 5.5 V 5V 20 V 12 6V 6.5 V 1.2 7V 5.5 V 20 V 1 8 R DS(on) [Ω] I D [A] 10 5V 0.8 0.6 6 4.5 V 4 0.4 2 0.2 0 0 0 5 10 15 0 20 5 10 15 I D [A] V DS [V] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=5.2 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 1.2 40 36 1 32 28 0.8 24 I D [A] R DS(on) [Ω] C °25 0.6 C °150 16 98 % 0.4 20 typ 12 8 0.2 4 0 0 -60 -20 20 60 100 140 180 2 4 6 8 10 V GS [V] T j [°C] Rev. 1.5 0 page 5 2006-01-04 IPA60R385CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=5.2 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 9 8 120 V 7 400 V 150 °C, 98% 25 °C 150 °C 101 I F [A] V GS [V] 6 5 4 100 3 25 °C, 98% 2 1 0 10-1 0 5 10 15 20 0 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=3.4 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 250 700 200 660 E AS [mJ] V( BR)DSS [V] 150 100 620 580 50 0 540 20 60 100 140 180 T j [°C] Rev. 1.5 -60 -20 20 60 100 140 180 T j [°C] page 6 2006-01-04 IPA60R385CP 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 104 6 5 Ciss 103 E oss [µJ] C [pF] 4 102 Coss 3 2 101 1 Crss 100 0 0 100 200 300 400 500 V DS [V] Rev. 1.5 0 100 200 300 400 500 600 V DS [V] page 7 2006-01-04 IPA60R385CP Definition of diode switching characteristics Rev. 1.5 page 8 2006-01-04 IPA60R385CP PG-TO220-3-31: Outline/ Fully isolated package (2500VAC; 1 minute) Dimensions in mm/inches Dimensions in mm/inches: Rev. 1.5 page 9 2006-01-04 IPA60R385CP Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.5 page 10 2006-01-04