PNP Silicon Switching Transistor SXT 2907 A High current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 60 V Collector-base voltage VCB0 60 Emitter-base voltage VEB0 5 Collector current IC 600 mA Total power dissipation, TS = 120 ˚C Ptot 1 W Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 90 Junction - soldering point Rth JS ≤ 30 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SXT 2907 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA V(BR)CE0 60 – – Collector-base breakdown voltage IC = 10 µA V(BR)CB0 60 – – Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 5 – – Collector-base cutoff current VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 125 ˚C ICB0 – – – – 10 10 nA µA Collector cutoff current VCE = 30 V, VBE = 0.5 V ICEX – – 50 nA Emitter-base cutoff current VEB = 3 V, IC = 0 IEB0 – – 10 Base cutoff current VCE = 30 V, VBE = 3 V IBL – – 50 DC current gain IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V hFE 75 100 100 100 50 – – – – – – – – 300 – Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VCEsat Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VBEsat 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 V – V – – – – 0.4 1.6 – – – – 1.3 2.0 SXT 2907 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 50 mA, VCE = 20 V, f = 100 MHz fT 200 – – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – – 8 pF Input capacitance VEB = 2 V, f = 1 MHz Cibo – – 30 Switching times VCC = 30 V, VBE = 0.5 V, IC = 150 mA, IB1 = 15 mA td tr – – – – 10 40 ns ns VCC = 6 V, IC = 150 mA, IB1 = IB2 = 15 mA ts tf – – – – 80 30 ns ns Test circuits Delay and rise time Storage and fall time Semiconductor Group 3 SXT 2907 A Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance Ccb = f (VCB) f = 1 MHz Permissible pulse load Ptot max / Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 20 V Semiconductor Group 4 SXT 2907 A Saturation voltage IC = f (VBE sat, VCE sat) hFE = 10 Delay time td = f (IC) Rise time tr = f (IC) hFE = 10 Storage time ts = f (IC) Fall time tf = f (IC) Semiconductor Group 5 SXT 2907 A DC current gain hFE = f (IC) Semiconductor Group 6