PNP Silicon Transistor SMBTA 70 For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 70 s2C Q62702-M0003 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Emitter-base voltage VEB0 4 Collector current IC 100 Peak collector current ICM 200 Peak base current IBM 100 Total power dissipation, TS = 71 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 310 Junction - soldering point Rth JS ≤ 240 mA Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 70 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA V(BR)CE0 40 – – V Emitter-base breakdown voltage IE = 100 µA V(BR)EB0 4 – – Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C ICB0 – – – – 100 20 nA µA Emitter-base cutoff current VEB = 4 V, IC = 0 IEB0 – – 20 nA DC current gain IC = 5 mA, VCE = 10 V hFE 40 – 400 – Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA VCEsat – – 0.25 V Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz fT 125 – – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – – 4 pF AC characteristics 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 SMBTA 70 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Base-emitter saturation voltage VBE sat = f (IC), hFE = 40 Semiconductor Group 3 SMBTA 70 Collector-emitter saturation voltage IC = f (VCE sat), hFE = 40 Collector current IC = f (VBE) VCE = 1 V DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 4