BSL302SN OptiMOS®2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS(on),max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 25 mΩ V GS=4.5 V 38 ID 7.1 A • Avalanche rated • dv /dt rated PG-TSOP-6 • Pb-free lead plating; RoHS compliant 6 5 4 1 2 Type Package Tape and Reel Information BSL302SN PG-TSOP-6 L6327 = 3000 pcs. / reel 3 Marking Lead Free Packing sPE Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T A=25 °C 7.1 T A=70 °C 5.7 Unit A Pulsed drain current I D,pulse T A=25 °C 28 Avalanche energy, single pulse E AS I D=7.1 A, R GS=25 Ω 30 mJ Reverse diode dv /dt dv /dt I D=7.5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114-HBM Soldering Temperature ±20 V 2 W -55 ... 150 °C 0 (0V to 250V) 260 °C IEC climatic category; DIN IEC 68-1 1.06 Value 55/150/56 page 1 2010-03-26 BSL302SN Parameter Values Symbol Conditions Unit min. typ. max. - - 50 minimal footprint - - 230 6 cm2 cooling area1) - - 62.5 30 - - Thermal characteristics Thermal resistance, junction - minimal footprint R thJS SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=VGS, I D=30 µA 1.2 1.70 2 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 °C - - 1 V DS=20 V, V GS=0 V, T j=150 °C - - 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=5.7 A - 27 38 mΩ V GS=10 V, I D=7.1 A - 18 25 16 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=7.1 A S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) 1.06 page 2 2010-03-26 BSL302SN Parameter Values Symbol Conditions Unit min. typ. max. - 564 750 - 202 269 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 28 43 Turn-on delay time t d(on) - 6.4 - Rise time tr - 2.8 - Turn-off delay time t d(off) - 13.7 - Fall time tf - 1.9 - Gate to source charge Q gs - 1.78 2.37 Gate to drain charge Q gd - 1.2 1.8 Gate charge total Qg - 4.4 6.6 Gate plateau voltage V plateau - 3.2 - V - - 2.5 A - - 28 - 0.8 1.2 - 14.2 - 5.1 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=7.1 A, R G=1.6 Ω pF ns Gate Charge Characteristics V DD=15 V, I D=7.1 A, V GS=0 to 5 V nC Reverse Diode 1.06 Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr T A=25 °C V GS=0 V, I F=7.1 A, T j=25 °C V R=15 V, I F=7.1 A, di F/dt =100 A/µs page 3 V ns - nC 2010-03-26 BSL302SN 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 8 2 7 6 1.6 1.2 I D [A] P tot [W] 5 4 3 0.8 2 0.4 1 0 0 0 40 80 120 160 0 40 80 T A [°C] 120 160 T A [°C] 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 102 102 limited by on-state resistance 1 µs 10 µs 10 0.5 100 µs 1 0.2 10 ms 10 1 ms 0.1 I D [A] Z thJA [K/W] DC 100 1 10-1 0.05 0.02 100 0.01 10-2 single pulse 10-3 10 10-1 -2 10 -1 10 0 10 1 10 2 V DS [V] 1.06 10-5 10-4 10-3 10-2 10-1 100 101 t p [s] page 4 2010-03-26 BSL302SN 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 30 60 10 V 28 7V 26 50 24 4.5 V 4V 22 3.5 V 20 40 16 R DS(on) [mΩ] I D [A] 18 3.7 V 14 12 3.5 V 10 3.7 V 4V 30 4.5 V 7V 10 V 20 8 6 10 4 3V 2 2.7 V 0 0 0 1 2 0 3 4 8 V DS [V] 12 16 I D [A] 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 8 20 7 6 15 g fs [S] I D [A] 5 4 25 °C 10 3 150 °C 2 5 1 0 0 0 1 2 3 4 5 V GS [V] 1.06 0 1 2 3 4 5 6 7 8 I D [A] page 5 2010-03-26 BSL302SN 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=7.1 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=30 µA parameter: I D 2.8 50 2.4 40 30 V GS(th) [V] R DS(on) [mΩ] 2 98 % 20 typ 98 % 1.6 typ 1.2 2% 0.8 10 0.4 0 0 -60 -20 20 60 100 140 -60 -20 20 T j [°C] 60 100 140 T j [°C] 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 104 102 101 103 100 I F [A] C [pF] Ciss Coss 25 °C 10-1 102 150 °C, 98% 150 °C 101 10-3 0 5 10 15 20 V DS [V] 1.06 25 °C, 98% 10-2 Crss 0 0.4 0.8 1.2 1.6 V SD [V] page 6 2010-03-26 BSL302SN 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=7.1 A pulsed parameter: T j(start) parameter: V DD 101 10 9 25 °C 8 24 V 7 100 °C 100 V GS [V] I AV [A] 6 125 °C 15 V 5 6V 4 3 2 1 10-1 0 100 101 102 103 0 2 t AV [µs] 4 6 8 10 Q gate [nC] 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 36 V GS 35 Qg 34 V BR(DSS) [V] 33 32 31 V g s(th) 30 29 28 Q g(th) Q sw 27 Q gs 26 -60 -20 20 60 100 Q g ate Q gd 140 T j [°C] 1.06 page 7 2010-03-26 BSL302SN Package Outline: TSOP6 2.9 ±0.2 (2.25) 1.1 MAX. B 0.1 MAX. 1 2 3 0.35 +0.1 -0.05 0.2 M B 6x 0.15 +0.1 -0.06 0.95 0.2 1.9 M 1.6 ±0.1 4 10˚ MAX. 5 2.5 ±0.1 6 0.25 ±0.1 10˚ MAX. (0.35) A A GPX09300 Footprint: Packaging: 0.5 0.2 2.7 8 2.9 1.9 4 0.95 Remark: Wave soldering possible dep. on customers process conditions Pin 1 marking 3.15 1.15 CPWG5899 HLG09283 Dimensions in mm 1.06 page 8 2010-03-26 BSL302SN Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user 1.06 page 9 2010-03-26