IRF 120LQ100

PD - 94396
SCHOTTKY RECTIFIER
120LQ100
HIGH EFFICIENCY SERIES
120 A, 100V
Major Ratings and Characteristics
Characteristics
Description/Features
120LQ100
Units
IF(AV)
120
A
VRRM
100
V
IFSM @ tp = 8.3ms half-sine
1000
A
VF @ 120Apk, TJ =125°C
0.74
V
TJ,TstgOperating and storage -55 to 150
°C
The 120LQ100 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic surface mount
SMD-1 ceramic package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX, TXV
and S quality levels.
•
•
•
•
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Surface Mount
• Lightweight
CASE STYLE
Case Outline and Dimensions - SMD-1
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CATHODE ANODE ANODE
1
03/15/02
120LQ100
Voltage Ratings
Part number
VR
120LQ100
Max. DC Reverse Voltage (V)
100
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
Limits
Units
120
A
50% duty cycle @ TC = 58°C, square waveform
Conditions
1000
A
@ tp = 8.3 ms half-sine
See Fig. 5
IFSM
Max. Peak One Cycle Non - Repetitive
Surge Current
Electrical Specifications
Parameters
V FM
I RM
Limits
Units
Max. Forward Voltage Drop
0.64
V
@ 30A
Conditions
See Fig. 1Q
0.74
V
@ 60A
0.92
V
@ 120A
0.62
V
@ 30A
0.75
V
@ 60A
0.94
V
@ 120A
0.53
V
@ 30A
0.62
V
@ 60A
0.74
V
@ 120A
TJ = -55°C R
TJ = 25°CR
TJ = 125°C R
Max. Reverse Leakage Current
60
µA
TJ = 25°C
See Fig. 2Q
15
mA
TJ = 100°C
60
mA
TJ = 125°C
VR = 5VDC ( 1MHz, 25°C ) R
CT
Max. Junction Capacitance
2616
pF
LS
Typical Series Inductance
5.9
nH
VR = rated VR R
Measured from center of cathode pad to center of
anode pad
Thermal-Mechanical Specifications
Parameters
Limits Units
TJ
Max.Junction Temperature Range
-55 to 150
Tstg
Max. Storage Temperature Range
-55 to 150
°C
0.8
°C/W
RthJC Max. Thermal Resistance, Junction
Conditions
°C
DC operation
See Fig. 4
to Case
wt
Weight (Typical)
Die Size
Case Style
2.6
275X275
g
mils
SMD-1
Q Pulse Width < 300µs, Duty Cycle < 2%
R Pins 2 and 3 externally tied together
2
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120LQ100
100
Reverse Current - I R ( mA )
125°C
1000
10
100°C
75°C
1
0.1
25°C
0.01
0.001
Instantaneous Forward Current - I F (A)
0
20
40
60
80
100
Reverse Voltage - VR (V)
100
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Tj = 125°C
10000
10
Tj = -55°C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Forward Voltage Drop - V F (V)
Junction Capacitance - C T (pF)
Tj = 25°C
T J = 25°C
1000
100
Fig. 1 - Max. Forward Voltage Drop Characteristics
0
20
40
60
80
100
Reverse Voltage -V R (V)
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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3
120LQ100
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.01
0.00001
0.10
PDM
0.05
t1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
180
120LQ100
Allowable Case Temprature - (°C)
160
R thJC = 0.8°C/W
140
120
DC
100
80
60
40
20
0
0
20
40
60
80
100
120
140
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/02
4
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