BAW101... Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 300 Peak reverse voltage VRM 300 Forward current IF 250 Peak forward current IFM 500 Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation Ptot 350 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 1) RthJS ≤ 330 K/W V mA TS ≤ 35°C -65 ... 150 BAW101 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Sep-24-2003 BAW101... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics 300 V Breakdown voltage V(BR) I(BR) = 100 µA Reverse current IR µA VR = 250 V - - 0.15 VR = 250 V, TA = 150 °C - - 50 VF - - 1.3 CT - 6 - pF trr - 1 - µs Forward voltage V IF = 100 mA AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, measured at IR = 1mA, RL = 100 Ω Test circuit for reverse recovery time D.U.T. ΙF Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50Ω Oscillograph Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF EHN00019 2 Sep-24-2003 BAW101... Reverse current IR = ƒ (TA) Forward Voltage VF = ƒ (TA) IF = Parameter VR = 250V ΙR 10 5 nA BAW 101 EHB00104 1 V max. 10 4 0.9 VF 5 typ. 10 3 100mA 0.85 0.8 5 0.75 10mA 10 2 0.7 5 0.65 10 1 0 50 100 ˚C 0.6 -40 -20 150 0 20 40 60 80 TA TA Forward current IF = ƒ (VF) Forward current IF = ƒ (T S) TA = 25°C BAW101 10 0 EHB00103 300 A mA 10 -1 200 IF ΙF BAW 101 100 120 °C 150 5 150 10-2 100 5 50 10-3 0 1.0 V 0 0 2.0 15 30 45 60 75 90 105 120 °C 150 TS VF 3 Sep-24-2003