BAW78M Silicon Switching Diode 4 Switching applications 5 High breakdown voltage 3 2 1 VPW05980 Type Marking BAW78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT595 Maximum Ratings Parameter Symbol Diode reverse voltage VR 400 Peak reverse voltage VRM 400 Forward current IF 1 Peak forward current IFM 1 Surge forward current, t = 1 s IFS 10 Total power dissipation, TS 110 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg Values Unit V A -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 40 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-21-2001 BAW78M Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. 400 - - IF = 1 A - - 1.6 IF = 2 A - - 2 IR - - 1 IR - - 50 CD - 10 - pF trr - 1 - µs DC characteristics Breakdown voltage V(BR) V I(BR) = 100 µA Forward voltage VF Reverse current µA VR = 400 V Reverse current VR = 400 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured at IR = 20mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50 Oscillograph: R = 50, tr = 0.35ns, C 1pF 2 Aug-21-2001 BAW78M Forward current IF = f (TS ) 1200 mA IF 800 600 400 200 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f(tp ) IFmax / IFDC = f(tp) 10 2 10 2 IFmax / IFDC RthJS K/W 10 1 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Aug-21-2001 BAW78M Forward current IF = f (VF ) Reverse current IR = f (TA) TA = 25°C VR = 400V 10 1 ΙF BAS 78A...D EHB00047 10 5 BAS 78A...D EHB00048 nA A ΙR 10 0 10 max 4 5 10 -1 10 typ 3 5 10 2 5 10 -2 10 -3 0 1 V 10 1 2 0 VF 50 100 C 150 TA 4 Aug-21-2001