2N7002DW OptiMOS™ Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS(on),max • Enhancement mode • Logic level • Avalanche rated 60 V V GS=10 V 3 Ω V GS=4.5 V 4 ID 0.3 A • Fast switching • Qualified according to AEC Q101 PG-SOT363 • 100% lead-free; RoHS compliant 6 1 Type Package Tape and Reel Information 2N7002DW PG-SOT363 L6327: 3000 pcs/reel Parameter 1) Symbol Conditions Continuous drain current ID Packing X8s Yes Non Dry Value T A=25 °C 0.30 T A=70 °C 0.24 T A=25 °C 1.2 Avalanche energy, single pulse E AS I D=0.3 A, R GS=25 Ω 1.3 Reverse diode dv /dt dv /dt I D=0.3 A, V DS=48 V, di /dt =200 A/µs, T j,max=150 °C 6 Gate source voltage V GS ±20 JESD22-A114 (HBM) P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 1) Rev.2.2 3 Lead Free I D,pulse Power dissipation 4 Marking Pulsed drain current ESD class 2 5 Unit A mJ kV/µs V class 0 (<250V) 0.5 W -55 ... 150 °C 55/150/56 Remark: one of both transistors in operation. page 1 2010-03-25 2N7002DW Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - minimal footprint 2) R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D=250 µA 60 - - Gate threshold voltage V GS(th) V DS=VGS, I D=250 µA 1.5 2.1 2.5 Drain-source leakage current I D (off) V DS=60 V, V GS=-10 V, T j=25 °C - - 0.1 V DS=60 V, V GS=0 V, T j=150 °C - - 5 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 10 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.25 A - 2.0 4 Ω V GS=10 V, I D=0.5 A - 1.6 3 |V DS|>2|I D|R DS(on)max, I D=0.24 A 0.2 0.36 - Transconductance g fs S 2) Perfomed on a 40x40mm2 FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70µm thick and 20mm long. Rev.2.2 page 2 2010-03-25 2N7002DW Parameter Values Symbol Conditions Unit min. typ. max. - 13 20 - 4.1 6 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 2.0 3 Turn-on delay time t d(on) - 3.0 4.5 Rise time tr - 3.3 5 Turn-off delay time t d(off) - 5.5 9 Fall time tf - 3.1 5 Gate to source charge Q gs - 0.05 0.1 Gate to drain charge Q gd - 0.2 0.4 Gate charge total Qg - 0.4 0.6 Gate plateau voltage V plateau - 4.0 - V - - 0.3 A - - 1.2 - 0.96 1.2 V - 8.5 13 ns - 2.4 4 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=0.5 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=48 V, I D=0.5 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev.2.2 T A=25 °C V GS=0 V, I F=0.5 A, T j=25 °C V R=30 V, I F=0.5 A, di F/dt =100 A/µs page 3 2010-03-25 2N7002DW 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.35 0.5 0.3 0.25 0.2 0.3 I D [A] P tot [W] 0.4 0.15 0.2 0.1 0.1 0.05 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 limited by on-state resistance 1 µs 100 0.5 10 µs 102 Z thJA [K/W] I D [A] 100 µs 1 ms 10-1 10 ms 0.2 0.1 0.05 0.02 single pulse 0.01 101 DC 10-2 100 10-3 1 10 100 10-4 10-3 10-2 10-1 100 101 102 103 t p [s] V DS [V] Rev.2.2 10-5 page 4 2010-03-25 2N7002DW 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 6 0.6 5V 7V 10 V 0.5 5 4.5 V 2.9 V 4V 3.5 V 4V 4 R DS(on) [Ω] 0.4 I D [A] 3.2 V 0.3 3.5 V 3 4.5 V 5V 2 0.2 7V 10 V 3.2 V 1 0.1 2.9 V 0 0 0 1 2 3 4 0 5 0.1 V DS [V] 0.2 0.3 0.4 0.5 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.6 0.5 0.45 0.5 0.4 0.35 0.4 g fs [S] I D [A] 0.3 0.3 0.25 0.2 0.2 0.15 0.1 0.1 0.05 0 0 0 1 2 3 4 5 Rev.2.2 0.00 0.10 0.20 0.30 0.40 I D [A] V GS [V] page 5 2010-03-25 2N7002DW 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.3 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=250 µA parameter: I D 6.0 3.2 2.8 5.0 98 % 2.4 4.0 V GS(th) [V] R DS(on) [Ω] 2 98 % 3.0 typ 1.6 2% 1.2 2.0 typ 0.8 1.0 0.4 0.0 0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 102 150 °C, 98% 100 150 °C Ciss I F [A] C [pF] 25 °C 101 Coss 25 °C, 98% 10-1 10-2 Crss 100 10-3 0 10 20 30 V DS [V] Rev.2.2 0 0.4 0.8 1.2 1.6 V SD [V] page 6 2010-03-25 2N7002DW 13Avalanche characteristics 14 Typ. gate charge I AS =f(t AV ); R GS =25 Ω V GS=f(Q gate); I D=0.5 A pulsed parameter: TJ(start) parameter: V DD 100 10 9 8 30 V 25 °C 10 7 100 °C -1 125 °C 12 V I AV [A] V GS [V] 6 48 V 5 4 10-2 3 2 1 10-3 0 100 101 102 103 0 0.1 0.2 0.3 0.4 0.5 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 70 V BR(DSS) [V] 65 60 55 50 -40 0 40 80 120 160 T j [°C] Rev.2.2 page 7 2010-03-25 2N7002DW SOT363 Package Outline: Footprint: Rev.2.2 Packing: page 8 2010-03-25 2N7002DW Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.2 page 9 2010-03-25