MPSA 92 MPSA 93 PNP Silicon High-Voltage Transistors ● ● ● High breakdown voltage Low collector-emitter saturation voltage Complementary types: MPSA 42 MPSA 43 (NPN) 1 32 Type MPSA 92 MPSA 93 Marking MPSA 92 MPSA 93 Ordering Code Pin Configuration Q68000-A5906 Q68000-A4810 1 2 3 E B C Package 1) TO-92 Maximum Ratings Parameter Symbol Values MPSA 92 MPSA 93 Unit Collector-emitter voltage VCE0 300 200 Collector-base voltage VCB0 300 200 Emitter-base voltage VEB0 Collector current IC 500 Base current IB 100 Total power dissipation, TC = 66 ˚C 2) Ptot 625 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V 5 mA – 65 … + 150 Thermal Resistance Junction - ambient Rth JA ≤ 200 Junction - case 2) Rth JC ≤ 135 1) 2) K/W For detailed information see chapter Package Outlines. Mounted on AI-heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 MPSA 92 MPSA 93 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Limit Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 MPSA 92 MPSA 93 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA, IB = 0 MPSA 92 MPSA 93 V(BR)CB0 Emitter-base breakdown voltage V(BR)EB0 IE = 100 µA, IB = 0 Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 °C VCB = 160 V, TA = 150 °C V 300 200 – – – – 300 200 – – – – 5 – – – – – – – – – – 100 100 20 20 nA nA µA µA – – 100 nA ICB0 MPSA 92 MPSA 93 MPSA 92 MPSA 93 ICER Emitter-base cutoff current VBE = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V hFE Collector-emitter saturation voltage 1) IC = 20 mA, IC = 2 mA MPSA 92 MPSA 93 VCEsat Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA – 25 40 25 – – – – – – V – – – – 0.5 0.4 VBEsat – – 0.9 Transition frequency IC = 20 mA, VCE = 10 V, f = 100 MHz fT – 70 – Collector-base capacitance Cobo – – – – 6 8 AC Characteristics VCB = 20 V, f = 1 MHz 1) MPSA 92 MPSA 93 Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 MHz pF MPSA 92 MPSA 93 Total power dissipation Ptot = f (TA; TC) Permissible pulse load RthJA = f (tp) Operating range Ic = f(VCE0) Collector cutoff current ICB0 = f (TA) VCB = VCBmax TA = 25 °C, D = 0 Semiconductor Group 3 MPSA 92 MPSA 93 DC current gain hFE = f (IC) VCE = 10 V Transition frequency fT = f (IC) f = 20 MHz, IC = 20 mA, VCE = 10 V Collector current IC = f (VBE) VCE = 10 V Semiconductor Group 4