BC 517 NPN Silicon Darlington Transistor BC 517 High current gain ● High collector current ● Complementary type: BC 516 (PNP) ● 2 1 1 3 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 517 – Q62702-C825 C TO-92 B E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 30 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 66 ˚C Ptot 625 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient Rth JA ≤ 200 Junction - case2) Rth JC ≤ 135 mA Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BC 517 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA V(BR)CE0 30 – – V Collector-base breakdown voltage IC = 100 µA V(BR)CB0 40 – – Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 10 – – Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C ICB0 – – – – 100 10 nA µA Emitter cutoff current VEB = 4 V IEB0 – – 100 nA DC current gain IC = 20 mA; VCE = 2 V1) hFE 30 000 – – – Collector-emitter saturation voltage1) IC = 100 mA; IB = 0.1 mA VCEsat – – 1 V Base-emitter voltage1) IC = 10 mA; VCE = 5 V VBE – – 1.4 Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT – 150 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 3.5 – pF AC characteristics 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 BC 517 Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA) VCB = 30 V Permissible pulse load RthJA = f (tp) Transition frequency fT = f (IC) VCE = 5 V, f = 20 MHz Semiconductor Group 3 BC 517 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 1000, parameter = TA Base-emitter saturation voltage IC = f (VBEsat) hFE = 1000, parameter = TA DC current gain hFE = f (IC) VCE = 2 V, parameter = TA Capacitance C = f (VEB, VCB) Semiconductor Group 4