INFINEON BC517

BC 517
NPN Silicon Darlington Transistor
BC 517
High current gain
● High collector current
● Complementary type: BC 516 (PNP)
●
2
1
1
3
Type
Marking
Ordering Code
Pin Configuration
1
2
3
Package1)
BC 517
–
Q62702-C825
C
TO-92
B
E
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
30
V
Collector-base voltage
VCB0
40
Emitter-base voltage
VEB0
10
Collector current
IC
500
Peak collector current
ICM
800
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TC = 66 ˚C
Ptot
625
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Junction - ambient
Rth JA
≤
200
Junction - case2)
Rth JC
≤
135
mA
Thermal Resistance
1)
2)
K/W
For detailed information see chapter Package Outlines.
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91
BC 517
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
V(BR)CE0
30
–
–
V
Collector-base breakdown voltage
IC = 100 µA
V(BR)CB0
40
–
–
Emitter-base breakdown voltage
IE = 10 µA
V(BR)EB0
10
–
–
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0
–
–
–
–
100
10
nA
µA
Emitter cutoff current
VEB = 4 V
IEB0
–
–
100
nA
DC current gain
IC = 20 mA; VCE = 2 V1)
hFE
30 000 –
–
–
Collector-emitter saturation voltage1)
IC = 100 mA; IB = 0.1 mA
VCEsat
–
–
1
V
Base-emitter voltage1)
IC = 10 mA; VCE = 5 V
VBE
–
–
1.4
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
fT
–
150
–
MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–
3.5
–
pF
AC characteristics
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
BC 517
Total power dissipation Ptot = f (TA; TC)
Collector cutoff current ICB0 = f (TA)
VCB = 30 V
Permissible pulse load RthJA = f (tp)
Transition frequency fT = f (IC)
VCE = 5 V, f = 20 MHz
Semiconductor Group
3
BC 517
Collector-emitter saturation voltage
IC = f (VCEsat)
hFE = 1000, parameter = TA
Base-emitter saturation voltage
IC = f (VBEsat)
hFE = 1000, parameter = TA
DC current gain hFE = f (IC)
VCE = 2 V, parameter = TA
Capacitance C = f (VEB, VCB)
Semiconductor Group
4