INFINEON BTS5230GS

D a t a S h e e t , V 2 .0 , J u n e 2 0 0 5
BTS 5230GS
Smart High-Side Power Switch
PROFET
Two Channels, 140 mΩ
Automotive Power
N e v e r
s t o p
t h i n k i n g .
Smart High-Side Power Switch
BTS 5230GS
Table of Contents
Page
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.1 Pin Assignment BTS 5230GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .10
4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5 Package Outlines BTS 5230GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
Data Sheet
2
V2.0, 2005-06-13
Smart High-Side Power Switch
PROFET
BTS 5230GS
Product Summary
P-DSO-14-18
The BTS 5230GS is a dual channel high-side power
switch in P-DSO-14-18 package providing embedded
protective functions.
The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The device is
monolithically integrated in Smart SIPMOS
technology.
Operating voltage
Vbb(on)
4.5 .. 28 V
Over voltage protection
Vbb(AZ)
RDS(ON)
41 V
1.8 A
Current limitation repetitive
IL(nom)
IL(LIM)
IL(SCr)
Standby current for whole device with load
Ibb(OFF)
2.5 µA
On-State resistance
Nominal load current (one channel active)
Current limitation
140 mΩ
8A
3A
Basic Features
•
•
•
•
•
•
•
Very low standby current
3.3 V and 5 V compatible logic pins
Improved electromagnetic compatibility (EMC)
Stable behaviour at undervoltage
Logic ground independent from load ground
Secure load turn-off while logic ground disconnected
Optimized inverse current capability
Type
Ordering Code
Package
BTS 5230GS
Q67065-S6135
P-DSO-14-18
Data Sheet
3
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Smart High-Side Power Switch
BTS 5230GS
Protective Functions
•
•
•
•
•
•
•
•
•
Reverse battery protection without external components (GND resistor integrated)
Short circuit protection
Overload protection
Multi-step current limitation
Thermal shutdown with restart
Thermal restart at reduced current limitation
Overvoltage protection without external resistor
Loss of ground protection
Electrostatic discharge protection (ESD)
Diagnostic Functions
•
•
•
•
•
Enable function for diagnosis pins (IS1 and IS2)
Proportional load current sense signal by current source
Open load detection in ON-state by load current sense
Open load detection in OFF-state by voltage source
Feedback on over temperature and current limitation in ON-state
Applications
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
• All types of resistive, inductive and capacitve loads
• Suitable for loads with high inrush currents, so as lamps
• Suitable for loads with low currents, so as LEDs
• Replaces electromechanical relays, fuses and discrete circuits
Data Sheet
4
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Overview
1
Overview
The BTS 5230GS is a dual channel high-side power switch (two times 140 mΩ) in
P-DSO-14-18 package providing embedded protective functions.
The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback
signal including current sense function and open load in off state. The diagnosis signals
can be switched on and off by the sense enable pin SEN.
An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2,
SEN) reduce external components to a minimum.
The power transistor is built by a N-channel vertical power MOSFET with charge pump.
The inputs are ground referenced CMOS compatible. The device is monolithically
integrated in Smart SIPMOS technology.
1.1
Block Diagram
VBB
channel 1
load current
sense
internal
power
supply
logic
IS1
gate control
&
charge pump
open load
detection
IN1
ESD
protection
temperature
sensor
SEN
clamp for
inductive load
multi step
load current
limitation
OUT1
channel 2
IN2
IS2
control and protection circuit
equivalent to
channel 1
OUT2
RGND
GND
Figure 1
Data Sheet
Block Diagram
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V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Overview
1.2
Terms
Following figure shows all terms used in this data sheet.
Vbb
Ibb
IIN1
IIN2
VIN1
VIN2
IIS1
IIS2
VIS1
VIS2
ISEN
IN1
VBB
IN2
IS1
OUT1
SEN
V DS1
VOUT1
BTS 5230GS
OUT2
IS2
I L1
I L2
V DS2
V OUT2
GND
VSEN
IGND
Terms2ch.emf
Figure 2
Terms
Symbols without channel number are channel related and valid for each channel
separately
Data Sheet
6
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Pin Configuration
2
Pin Configuration
2.1
Pin Assignment BTS 5230GS
(top view)
Figure 3
VBB
1
14
VBB
GND
2
13
OUT1
IN1
3
12
OUT1
IS1
4
11
OUT2
IS2
5
10
OUT2
IN2
6
9
SEN
VBB
7
8
VBB
Pin Configuration P-DSO-14-18
2.2
Pin Definitions and Functions
Pin
Symbol
I/O
OD
Function
3
IN1
I
Input signal for channel 1
6
IN2
I
Input signal for channel 2
4
IS1
O
Diagnosis output signal channel 1
5
IS2
O
Diagnosis output signal channel 2
9
SEN
I
Sense Enable input for channel 1&2
12, 13
OUT1
O
Protected high-side power output channel 1
10, 11
OUT2
O
Protected high-side power output channel 2
2
GND
-
Ground connection
1, 7, 8, 14 VBB
-
Positive power supply for logic supply as well as
output power supply
Data Sheet
7
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Smart High-Side Power Switch
BTS 5230GS
Electrical Characteristics
3
Electrical Characteristics
3.1
Maximum Ratings
Stresses above the ones listed here may cause permanent damage to the device.
Exposure to maximum rating conditions for extended periods may affect device reliability.
Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
Unit Test
Conditions
max.
Supply Voltage
-16
28
V
Supply voltage for full short
Vbb(SC)
circuit protection (single pulse)
(Tj = -40°C .. 150°C)
0
20
V
VDS
Supply Voltage for Load Dump Vbb(LD)
-
52
V
40
V
3.1.1
Supply voltage
3.1.2
3.1.3
3.1.4
Vbb
Voltage at power transistor
protection
L = 8 µH
R = 0.2 Ω 1)
RI = 2 Ω 2)
RL = 12 Ω
Power Stages
3.1.5
Load current
3.1.6
Maximum energy dissipation
single pulse
3.1.7
Power dissipation (DC)
IL
EAS
-
IL(LIM) A
0.1
J
3)
4)
IL(0) = 2.1 A
Tj(0) = 150°C
Ptot
-
0.9
W
5)
Ta = 85 °C
Tj ≤ 150 °C
Logic Pins
3.1.8
3.1.9
Voltage at input pin
Current through input pin
3.1.10 Voltage at sense enable pin
VIN
-5
-16
10
IIN
-2.0
-8.0
2.0
VSEN
-5
-16
10
-2.0
-8.0
2.0
-25
10
3.1.11 Current through sense enable ISEN
pin
3.1.12 Current through sense pin
Data Sheet
IIS
8
V
t ≤ 2 min
mA
t ≤ 2 min
V
t ≤ 2 min
mA
t ≤ 2 min
mA
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Electrical Characteristics
Tj = 25 °C (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
min.
Unit Test
Conditions
max.
Temperatures
3.1.13 Junction Temperature
3.1.14 Dynamical temperature
increase while switching
3.1.15 Storage Temperature
Tj
∆Tj
-40
150
°C
-
60
°C
Tstg
-55
150
°C
ESD Susceptibility
3.1.16 ESD susceptibility HBM
VESD
IN, SEN
IS
OUT
kV
-1
-2
-4
1
2
4
according to
EIA/JESD
22-A 114B
1)
R and L describe the complete circuit impedance including line, contact and generator impedances
2)
RI is the internal resistance of the Load Dump pulse generator
3)
Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.
4)
Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse
5)
Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air.
Data Sheet
9
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Block Description and Electrical Characteristics
4
Block Description and Electrical Characteristics
4.1
Power Stages
The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge
pump.
4.1.1
Output On-State Resistance
The on-state resistance depends on the supply voltage as well as the junction
temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance
RDS(ON). The on-state resistance in reverse polarity mode is described in Section 4.2.2.
240
220
200
180
160
140
120
100
80
60
-50 -25
Tj = 25°C
240
220
RDS(ON) /mΩ
RDS(ON) /mΩ
Vbb = 13.5 V
4.1.2
180
160
140
120
100
0
25
50
75 100 125 150
0
T /°C
Figure 4
200
5
10
15
Vbb /V
20
25
Typical On-State Resistance
Input Circuit
Figure 5 shows the input circuit of the BTS 5230GS. There is an integrated input resistor
that makes external components obsolet. The current source to ground ensures that the
device switches off in case of open input pin. The zener diode protects the input circuit
against ESD pulses.
IN
RIN
IIN
RGND
GND
Input.emf
Figure 5
Data Sheet
Input Circuit (IN1 and IN2)
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V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Block Description and Electrical Characteristics
A high signal at the input pin causes the power DMOS to switch on with a dedicated
slope, which is optimized in terms of EMC emission.
IN
VOUT
tON
tOFF
t
90%
70%
70%
dV /dtON
dV /dtON
30%
30%
10%
t
Figure 6
4.1.3
SwitchOn.emf
Switching a Load (resistive)
Inductive Output Clamp
When switching off inductive loads with high-side switches, the voltage VOUT drops
below ground potenial, because the inductance intends to continue driving the current.
V bb
VBB
IL
GND
OUT V OUT
L,
RL
OutputClamp .em
Figure 7
Output Clamp (OUT1 and OUT2)
To prevent destruction of the device, there is a voltage clamp mechanism implemented
that keeps that negative output voltage at a certain level (VOUT(CL)). See Figure 7 and
Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited.
Data Sheet
11
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Block Description and Electrical Characteristics
V OUT
IN = 5V
IN = 0V
Vbb
t
V OUT(CL)
IL
t
Figure 8
InductiveLoad.emf
Switching an Inductance
Maximum Load Inductance
While demagnization of inductive loads, energy has to be dissipated in the BTS 5230GS.
This energy can be calculated with following equation:
V OUT(CL) 
V bb 
L
- ⋅ ln  1 – ---------------------E = ( V bb – V OUT(CL) ) ⋅ ----------------------  + I L ⋅ -----RL
RL
V OUT(CL) 

Following equation simplifies under the assumption of RL = 0:
V bb 
2 
1
E = --- LI L ⋅  1 – ----------------------
2
V OUT(CL) 

The energy, which is converted into heat, is limited by the thermal design of the
component. See Figure 9 for the maximum allowed energy dissipation.
Vbb = 12 V
0.5
0.4
0.3
EAS /J
0.2
0.1
0.05
0.04
0.03
0.02
0.01
1
Figure 9
Data Sheet
2
3
IL /A
4
5
Maximum energy dissipation single pulse, Tj,Start = 150°C
12
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Block Description and Electrical Characteristics
4.1.4
Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Conditions
V
VIN = 4.5 V,
RL = 12 Ω,
VDS < 0.5 V
VIN = 5 V
max.
General
Vbb
4.1.1
Operating voltage
4.1.2
Operating current
IGND
one channel active
two channels active
4.1.3
Standby current for
whole device with
load
4.5
28
mA
2.0
3.8
4
8
Ibb(OFF)
µA
1.5
2.5
2.5
10
VIN = 0 V,
VSEN = 0 V,
Tj = 25°C,
Tj=85°C1)
Tj = 150°C
Output characteristics
4.1.4
On-State resistance
per channel
RDS(ON)
140
260
4.1.5
Output voltage drop
VDS(NL)
limitation at small load
currents
4.1.6
Nominal load current
per channel
one channel active
two channels active
IL(nom)
4.1.7
Output clamp
4.1.8
Output leakage
current per channel
VOUT(CL)
IL(OFF)
4.1.9
Inverse current
capability
Data Sheet
mΩ
40
mV
IL = 2.5 A
Tj = 25 °C
Tj = 150 °C
IL < 0.15 A
A
Ta = 85 °C
Tj ≤ 150 °C 2) 3)
IL = 40 mA
VIN = 0 V
1.8
1.3
-16
-IL(inv)
-13
-10
V
0.1
4
µA
2
13
A
1)
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Block Description and Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Conditions
K/W
1)
K/W
1) 2)
max.
Thermal Resistance
4.1.10 Junction to case
4.1.11 Junction to ambient 2)
one channel active
all channels active
Rthjc
Rthja
48
75
71
Input characteristics
4.1.12 Input resistance
4.1.13 L-input level
4.1.14 H-input level
4.1.15 Input hysteresis
4.1.16 L-input current
4.1.17 H-input current
RIN
VIN(L)
VIN(H)
∆VIN
IIN(L)
IIN(H)
2.0
3.5
5.5
kΩ
-0.3
1.0
V
2.6
5.7
V
0.25
V
1)
VIN = 0.4 V
VIN = 5 V
3
18
75
µA
10
38
75
µA
Timings
4.1.18 Turn-on time to
90% VOUT
tON
80
250
µs
4.1.19 Turn-off time to
10% VOUT
tOFF
100
250
µs
4.1.20 slew rate
30% to 70% VOUT
dV/ dtON
0.1
0.3
0.5
V/µs
4.1.21 slew rate
70% to 30% VOUT
-dV/
dtOFF
0.1
0.26
0.5
V/µs
RL = 12 Ω,
Vbb = 13.5 V
RL = 12 Ω,
Vbb = 13.5 V
RL = 12 Ω,
Vbb = 13.5 V
RL = 12 Ω,
Vbb = 13.5 V
1)
Not subject to production test, specified by design
2)
Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air
3)
Not subject to production test, parameters are calculated from RDS(ON) and Rth
Note: Characteristics show the deviation of parameter at the given supply voltage and
junction temperature. Typical values show the typical parameters expected from
manufacturing.
Data Sheet
14
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
4.2
Protection Functions
The device is fully protected by embedded protection functions. Integrated protection
functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are neither designed for continuous nor repetitive operation.
4.2.1
Over Load Protection
The load current IOUT is limited by the device itself in case of over load or short circuit to
ground. There are three steps of current limitation which are selected automatically
depending on the voltage VDS across the power DMOS. Please note that the voltage at
the OUT pin is Vbb - VDS. Please refer to following figure for details.
IL
10
8
6
4
2
5
Figure 10
10
15
20
VDS
CurrentLimitation.emf
Current Limitation (minimum values)
Current limitation is realized by increasing the resistance of the device which leads to
rapid temperature rise inside. A temperature sensor for each channel causes an
overheated channel to switch off to prevent destruction. After cooling down with thermal
hysteresis, the channel switches on again. Please refer to Figure 11 for details.
IN
IL
t
IL(LIM)
IL(SCr)
t
IIS
t
Figure 11
OverLoad .emf
Shut Down by Over Temperature
In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart,
the current limitation level is reduced to IL(SCr). The current limitation level is reset to
IL(LIM) by switching off the device (VIN = 0 V).
Data Sheet
15
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
4.2.2
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional
power is dissipated by the integrated ground resistor. Use following fomular for
estimation of total power dissipation Pdiss(rev) in reverse polarity mode.
2
Pdiss(rev) =
∑
V bb
( V DS(rev) ⋅I L ) + -------------R GND
The reverse current through the intrinsic body diode has to be limited by the connected
load. The current trough sense pins IS1 and IS2 has to be limited (please refer to
maximum ratings on Page 8). The over-temperature protection is not active during
reverse polarity.
4.2.3
Over Voltage Protection
In addition to the output clamp for inductive loads as described in Section 4.1.3, there is
a clamp mechanism for over voltage protection. Because of the integrated ground
resistor, over voltage protection does not require external components.
As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power
transistor opens and the voltage across logic part is clamped. As a result, the internal
ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin
IN1, IN2 and SEN rises almost to that potential, depending on the impedance of the
connected circuitry.
IN
ZDAZ
RIN
VBB
IS
SEN RSEN
logic
ZDESD
RGND
OUT
V OUT
GND
OverVoltage .emf
Figure 12
4.2.4
Over Voltage Protection
Loss of Ground Protection
In case of complete loss of the device ground connections, but connected load ground,
the BTS 5230GS securely changes to or keeps in off state.
Data Sheet
16
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
4.2.5
Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Conditions
VDS = 7 V
VDS = 14 V
max.
Over Load Protection
4.2.1
4.2.2
Load current limitation IL(LIM)
16
A
5
10
A
Repetitive short circuit IL(SCr)
current limitation
4.2.3
Initial short circuit shut tOFF(SC)
down time
4.2.4
Thermal shut down
temperature
Tj(SC)
Thermal hysteresis
∆Tj
4.2.5
8
3
150
A
0.5
ms
170
°C
1)
Tj = Tj(SC)
TjStart = 25 °C 1)
1)
10
K
1)
mV
IL = -1.6 A,
Vbb = -13.5 V,
Tj = 150°C
Vbb = -13.5 V 1)
Reverse Battery
4.2.6
Drain-Source diode
voltage (VOUT > Vbb)
-VDS(rev)
4.2.7
Reverse current
through GND pin
-IGND
700
65
mA
Ground Circuit
4.2.8
Integrated Resistor in RGND
GND line
115
220
200
350
Ω
350
Ω
Tj < 150°C
Tj = 150°C
53
V
Ibb = 2 mA
2
mA
IIN = 0,1) 2)
ISEN = 0,
IIS = 0,
IGND = 0
Over Voltage
4.2.9
Overvoltage
protection
Vbb(AZ)
41
47
Loss of GND
4.2.10 Output current while
GND disconnected
IL(GND)
1)
Not subject to production test, specified by design
2)
no connection at these pins
Data Sheet
17
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
4.3
Diagnosis
For diagnosis purpose, the BTS 5230GS provides an Enhanced IntelliSense signal at
pins IS1 and IS2. This means in detail, the current sense signal IIS, a proportional signal
to the load current (ratio kILIS = IL / IIS), is provided as long as no failure mode (see
Table 1) occures. In case of open load in off-state, VIS(fault) is fed to the diagnosis pin.
S OL
VBB
IIS1
IN1
Rlim
ROL
gate control
RIN1
IS1
0
1
1
0
OUT1
0
V IS(fault)
1
SEN
µC
VOUT(OL)
RSEN
channel 1
IN2
Rlim
IL(PD)
gate control
RIN2
IS2
0
RIS1 RIS2
IIS2
diagnosis
1
OUT2
channel 2
GND
load
Sense.emf
Figure 13
Block Diagram: Diagnosis
Table 1
Truth Table
Operation Mode
Input
Level
Output Level
Diagnostic Output
SEN = H
SEN = L
GND
Z
Z
GND
Z
Z
Over-Temperature
Z
Z
Z
Short Circuit to Vbb
Vbb
VIS = VIS(fault)
Z
< VOUT(OL)
> VOUT(OL)
Z
Z
Z
Normal Operation (OFF)
Short Circuit to GND
Open Load
Data Sheet
L
(OFF-State)
18
VIS = VIS(fault)
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Table 1
Truth Table
Operation Mode
Input
Level
Output Level
Diagnostic Output
SEN = H
SEN = L
~Vbb
IIS = IL / kILIS
Z
< Vbb
Z
Z
~GND
Z
Z
Over-Temperature
Z
Z
Z
Short Circuit to Vbb
Vbb
Vbb
IIS < IL / kILIS
Z
Z
Z
Normal Operation (ON)
H
(ON-State)
Current Limitation
Short Circuit to GND
Open Load
L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit
4.3.1
ON-State Diagnosis
The standard diagnosis signal is a current sense signal proportional to the load current.
The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to
Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is
recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ
dummy
Tj = 150°C
dummy
Tj = -40°C
3000
kILIS
2500
2000
1500
1000
500
0
0.5
1
1.5
2
2.5
IL /A
Figure 14
1)
Current sense ratio kILIS1)
The curves show the behavior based on characterization data. The marked points are guaranteed in this Data
Sheet in Section 4.3.4 (Position 4.3.6).
Data Sheet
19
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
In case of over-current as well as over-temperature, the current sense signal is switched
off. As a result, one threshold is enough to distinguish between normal and faulty
operation. Open load and over-load can be differentiated by switching off the channel
and using open-load detection in off-state.
Details about timings between the diagnosis signal IIS and the output voltgage VOUT and
the load current IL in ON-state can be found in Figure 15.
IN
OFF
ON
t
tON
V OUT
t
IL
tsIS(ON)
IIS
tsIS(LC)
t
t
SwitchOn .emf
Figure 15
4.3.2
Timing of Diagnosis Signal in ON-state
OFF-State Diagnosis
Details about timings between the diagnosis signal IIS and the output voltgage VOUT and
the load current IL in OFF-state can be found in Figure 16.
IN
ON
OFF
t
V OUT
pull-up resistor
inactive
Open Load, pull-up resistor active
IIS
td(fault)
ts(fault)
t
V IS(fault) / RS
t
SwitchOff.emf
Figure 16
Timing of Diagnosis Signal in OFF-state
For open load diagnosis in off state an external output pull-up resistor (ROL) is
recommended. For calculation of the pull-up resistor, just the external leakage current
Ileakage and the open load threshold voltage VOUT(OL) has to be taken into account.
Data Sheet
20
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
V bb(min) – V OUT(OL,max)
R OL = ---------------------------------------------------------I leakage
Ileakage defines the leakage current in the complete system e.g. caused by humidity.
There is no internal leakage current from out to ground at BTS 5230GS. Vbb(min) is the
minimum supply voltage at which the open load diagnosis in off state must be ensured.
To reduce the stand-by current of the system, an open load resistor switch (SOL) is
recommended.
4.3.3
Sense Enable Function
The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN).
See Figure 17 for details on the timing between SEN pin and diagnosis signal IIS.
Please note that the diagnosis is enabled, when no signal is provided at pin SEN.
SEN
IIS
tsIS(SEN)
tdIS(SEN)
tsIS(SEN)
tdIS(SEN)
t
t
Figure 17
SEN.emf
Timing of Sense Enable Signal
The SEN pin circuit is designed equal to the input pin. Please refer to Figure 5 for details.
The resistors Rlim are recommended to limit the current through the sense pins IS1 and
IS2 in case of reverse polarity and over-voltage. Please refer to maximum ratings on
Page 8.
The stand-by current of the BTS 5230GS is minimized, when both input pins (IN1 and
IN2) and the sense enable pin (SEN) are on low level.
Data Sheet
21
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
4.3.4
Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Conditions
Open Load at OFF state
4.3.1
Open load detection
threshold voltage
VOUT(OL)
2.0
3.2
4.4
V
4.3.2
Sense signal in case
of open load
VIS(fault)
3.5
5.0
6.5
V
4.3.3
Sense signal current
limitation
IIS(LIM)
4
4.3.4
Sense signal invalid
after negative input
slope
td(fault)
1.2
ms
4.3.5
Fault signal settling
time
ts(fault)
200
µs
mA
VIN = 0 V
VOUT = 12 V
IIS = 1 mA
VIS = 0 V
VIN = 0 V
VOUT = 12 V
VIN = 5 V to 0 V
VOUT = 12 V
VIN = 0 V
VOUT = 0 V to
> VOUT(OL)
IIS = 1 mA
Load Current Sense
4.3.6
Current sense ratio
kILIS
IL = 0.04 A
IL = 0.34 A
IL = 0.6 A
IL = 1.0 A
IL = 2.6 A
IL = 0.04 A
IL = 0.34 A
IL = 0.6 A
IL = 1.0 A
IL = 2.6 A
4.3.7
Current sense voltage VIS(LIM)
limitation
4.3.8
IIS(LH)
Current sense
leakage/offset current
Data Sheet
VIN = 5 V
Tj = -40 °C
500
1210
1210
1210
1220
1800
1490
1416
1410
1405
3100
1830
1645
1600
1590
900
1210
1210
1210
1220
1650
1490
1416
1410
1405
2400
1830
1645
1600
1590
5.0
5.9
7.5
V
5
µA
22
Tj = 150 °C
IIS = 0.5 mA
IL = 2.6 A
VIN = 5 V
IL = 0 A
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
Unit
Test Conditions
2
µA
VSEN = 0 V
IL = 2.6 A
4.3.10 Current sense settling tsIS(ON)
time to IIS static ±10%
after positive input
slope
300
µs
VIN = 0 V to 5 V
IL = 1.6 A
4.3.11 Current sense settling tsIS(LC)
time to IIS static ±10%
after change of load
current
50
min.
4.3.9
Current sense
leakage, while
diagnosis disabled
typ.
IIS(dis)
max.
1)
µs
VIN = 5 V
IL = 0.6 A to 1
1)
Sense Enable
RSEN
VSEN(L)
L-input level
H-input level
VSEN(H)
L-input current
ISEN(L)
ISEN(H)
H-input current
Current sense settling tsIS(SEN)
4.3.12 Input resistance
2.0
4.3.13
4.3.14
4.3.15
4.3.16
4.3.17
3.5
5.5
kΩ
-0.3
1.0
V
2.6
5.7
V
3
18
75
µA
10
38
75
µA
3
25
µs
25
µs
time after positive
SEN slope
4.3.18 Current sense
tdIS(SEN)
deactivation time after
negative SEN slope
1)
VSEN = 0.4 V
VSEN = 5 V
VSEN = 0 V to 5 V
VIN = 0 V
VOUT > VOUT(OL)
VSEN = 5 V to 0 V
IL = 2 A
RS = 5 kΩ 1)
Not subject to production test, specified by design
Data Sheet
23
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Package Outlines BTS 5230GS
5
Package Outlines BTS 5230GS
P-DSO-14-18
(Plastic Dual Small Outline Package)
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Dimensions in mm
SMD = Surface Mounted Device
Data Sheet
24
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Revision History
6
Revision History
Version
Date
Changes
V2.0
05-06-08
initial version
Data Sheet
25
2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Revision History
Data Sheet
26
V2.0, 2005-06-13
Smart High-Side Power Switch
BTS 5230GS
Edition 2005-06-13
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 6/13/05.
All Rights Reserved.
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Data Sheet
27
2005-06-13
http://www.infineon.com
Published by Infineon Technologies AG