IRF IRGSL14C40L

PD - 93891A
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features
•Most Rugged in Industry
•Logic-Level Gate Drive
•> 6KV ESD Gate Protection
•Low Saturation Voltage
•High Self-clamped Inductive Switching Energy
TERMINAL DIAGRAM
Collector
•BVCES = 370V min, 430V max
•IC @ TC = 110°C = 14A
•VCE(on) typ= 1.2V @7A @25°C
• IL(min)=11.5A @25°C,L=4.7mH
R1
Gate
R2
Description
Emitter
The advanced IGBT process family includes a
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits.
Unique features include on-chip active voltage
clamps between the Gate-Emitter and
Gate-Collector which provide over voltage
protection capability in ignition circuits.
JEDEC TO-263AB
JEDEC TO-262AA
JEDEC TO-220AB
IRGS14C40L
IRGSL14C40L
IRGB14C40L
NOTE: IRGS14C40L is available in tape and reel. Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.
Absolute Maximum Ratings
Parameter
Max
Unit
Condition
VCES
Collector-to-Emitter Voltage
Clamped
V
RG = 1K ohm
IC @ TC = 25°C
Continuous Collector Current
20
A
VGE = 5V
IC @ TC = 110°C
Continuous Collector Current
14
A
VGE = 5V
IG
Continuous Gate Current
1
mA
IGp
Peak Gate Current
10
mA tPK = 1ms, f = 100Hz
VGE
Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ T = 110°C Maximum Power Dissipation
Clamped
V
125
W
54
W
TJ
Operating Junction and
- 40 to 175
°C
TSTG
Storage Temperature Range
- 40 to 175
°C
VESD
Electrostatic Voltage
IL
Self-clamped Inductive Switching Current
6
KV C = 100pF, R = 1.5K ohm
11.5
A
Min
Typ
L = 4.7mH, T = 25°C
Thermal Resistance
Parameter
Max
RθJC
Thermal Resistance, Junction-to-Case
1.2
RθJA
Thermal Resistance, Junction-to-Ambient
40
Unit
°C/W
(PCB Mounted, Steady State)
ZθJC
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Transient Thermal Impedance, Juction-to-Case (Fig.11)
Page 1
4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Off-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max
BVCES Collector-to-Emitter Breakdown Voltage
370 400
BVGES Gate-to-Emitter Breakdown Voltage
10
I CES
R1
Gate Series Resistance
R2
Gate-to-Emitter Resistance
24
10
Unit
Conditions
Fig
V
R G = 1K ohm, I C=7A, VGE = 0V
V
I G=2m A
15
µA
R G=1K ohm, VCE = 250V
100
µA
R G=1K ohm, VCE = 250V, TJ =150°C
28
V
I C = -10m A
75
ohm
12
Collector-to-Emitter Leakage Current
BVCER Emitter-to-Collector Breakdown Voltage
430
20
30
K ohm
On-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max
1.2
VCE(on) Collector-to-Emitter Saturation
1.35 1.55
Voltage
VGE(th) Gate Threshold Voltage
1.3
Transconductance
10
IC
Collector Current
20
Conditions
Fig
I C = 7A, VGE = 4.5V
V
I C = 10A, VGE = 4.5V
1
o
2
o
4
1.35 1.55
I C = 10A, VGE = 4.5V, TC= -40 C
1.5
1.7
I C = 14A, VGE = 5.0V, TC= -40 C
1.55 1.75
I C = 14A, VGE = 5.0V
o
I C = 14A, VGE = 5.0V, TC=150 C
1.6
1.8
1.8
2.2
0.75
gfs
Unit
1.40
VCE = VGE, I C = 1 m A, TC=25 C
o
VCE = VGE, I C = 1 m A, TC=150 C
S
VCE = 25V, I C = 10A, TC=25 C
A
VCE = 10V, VGE = 4.5V
1.8
15
19
o
V
3, 5
8
o
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max
Qg
Total Gate charge
27
Q ge
Q gc
Gate - Emitter Charge
2.5
Gate - Collector Charge
10
Unit
nC
t d(on) Turn - on delay time
0.6
0.9
1.35
Rise time
tr
t d(off) Turn - off delay time
1.6
3.7
2.8
6
4
8.3
µs
Conditions
Fig
I C = 10A, VCE=12V, VGE=5V
7
I C = 10A, VCE=12V, VGE=5V
I C = 10A, VCE=12V, VGE=5V
15
VGE=5V, RG=1K ohm, L=1mH, VCE=14V
12
VGE=5V, RG=1K ohm, L=1mH, VCE=14V
VGE=5V, RG=1K ohm, L=1mH, VCE=300V
14
C ies
Input Capacitance
550
825
C oes
C res
Output Capacitance
100
150
Reverse Transfer Capacitance
12
18
IL
Self-Clamped
15.5
L=2.2m H, TC=25°C
9
Inductive Switching Current
11.5
L=4.7m H, TC=25°C
10
16.5
L=1.5m H, TC=150°C
13
7.5
L=4.7m H, TC=150°C
L=8.7m H, TC=150°C
14
VGE=0V, VCE=25V, f=1M H z
pF
25
VGE=0V, VCE=25V, f=1M H z
VGE=0V, VCE=25V, f=1M H z
6
L=0.7m H, TC=25°C
A
6
o
TJ =150 C,
t SC
Short Circuit Withstand Time
120
µs
VCC = 16V, L = 10µH
14
R G = 1K ohm, VGE = 5V
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Page 2
4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Fig.1 - Typ. Output Characteristics
TJ=25°C
Fig.2 - Typ. Output Characteristics
TJ=125°C
60
60
VGE = 10 V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
50
50
40
40
IC (A)
IC (A)
VGE = 10 V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
30
20
20
10
10
0
0
0
1
2
3
4
5
6
0
1
VCE (V)
3
4
5
6
VCE (V)
Fig.3 - Transfer Characteristics
VCE=20V; tp=20µs
Fig.4 - Typical VCE vs TJ
VGE=4.5V
100
1.6
TJ = 25°C
TJ = 125°C
90
1.5
80
I C = 10A
70
1.4
60
V CE ( V )
I CE (A )
2
50
40
1.3
1.2
30
20
1.1
I C = 7A
10
1.0
0
0
2
4
6
8
-50
10
50
100
150
200
TJ (°C)
VGE (V)
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0
Page 3
4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Fig.6 - Typ. Capacitance vs VCE
VGE=0V; VCE=25V; f=1MHz
Fig.5 - Typical VGE(th) vs TJ
I C=1mA
1000
2.2
C ies
Capacitance (pF)
2.0
V GE(th) ( V )
1.8
1.6
1.4
100
C oes
10
C res
1.2
1.0
1
-50
0
50
100
150
200
1
10
TJ (°C)
VCE (V)
Fig.7 - Typ. Gate Charge vs VGE
I C=10A; VCE=12V; VGE=5V
Fig.8 - Typical VCE vs VGE
20
5.5
5.0
18
4.5
16
4.0
14
V CE (V )
3.5
V GE (V )
100
3.0
2.5
12
10
I C= 7A; 125°C
I C = 7A; 25°C
I C=10A; 125°C
I C=10A; 25°C
8
2.0
6
1.5
1.0
4
0.5
2
0.0
0
0
5
10
15
20
25
30
2.5
3.5
4
VGE (V)
QG, Total Gate Charge (nC)
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3
Page 4
4/7/2000
4.5
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Fig.9 - Self-clamp Avalance Current vs
Inductance @ 25°C
Fig.10 - Self-clamp Avalance Current
vs Inductance @ 150°C
20
Open-secondary Current (A)
Open-secondary Current (A)
40
35
30
Typical
25
20
15
Minimum
10
18
16
14
12
Typical
10
8
Minimum
6
4
0
1
2
3
4
5
0
Inductance (mH)
2
4
6
8
Inductance (mH)
10
Fig.11 - Transient Thermal Impedance, Junction-to-Case
Thermal Response(Z thJC)
10
1
D = 0.50
0.20
PDM
0.10
0.1
0.02
0.01
0.01
0.00001
t1
0.05
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
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Page 5
4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Fig.12 - Switching Waveform for Time Measurement
VGE= 5V; RG= 1KΩ; L= 1mH; VCE= 14V; used circuit in Fig.14
450
8
VClamp
400
7
V
6
300
5
Vcl (measured)
250
4
200
3
VGE
150
2
100
V GE (V )
clamp
(V)
350
1
t d (o f f )
50
0
0
-1
tr
-50
-14
-10
-6
-2
-2
2
6
10
14
t (µs)
Fig.13 - Self-clamped Inductive Switching Waveform
L=4.7mH; TC=25°C; used circuit in Fig.14
12
V clamp
CE
400
8
300
6
200
4
100
2
0
0
-2.E-05
-1.E-05
0.E+00
1.E-05
2.E-05
3.E-05
4.E-05
5.E-05
V clamp (V )
I
I
CE
(A)
10
500
-100
6.E-05
time
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Page 6
4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Fig.14 - Test Circuit
0.47 Ω
L
1KΩ
D.U.T.
Ice
Fig.15 - Gate Charge Circuit
L
VC C
DUT
0
1K
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Page 7
4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
TO-263AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
1.40 (.055)
MAX.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
REF.
-B-
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
15.49 (.610)
14.73 (.580)
3
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
3X
1.40 (.055)
1.14 (.045)
3X
5.08 (.200)
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
0.25 (.010)
M
8.89 (.350)
REF.
1.39 (.055)
1.14 (.045)
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
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Page 8
2.54 (.100)
2X
4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
TO-263AB Package Outline in Tape and Reel
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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Page 9
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
4/7/2000
Ignition IGBT
IRGS14C40L
IRGSL14C40L
IRGB14C40L
TO-262AA Package Outline
Dimensions are shown in millimeters (inches)
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Page 10
4/7/2000
Ignition IGBT
IRGS14C40L
IRGSL14C40L
IRGB14C40L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
1
2
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
3
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
3X
1.40 (.055)
3X
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
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Page 11
4/7/2000