S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! ™ 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Data Sheet Rev. 2.0, 2010-01-08 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV04S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The IDVxxS60C family is extending the already broad portfolio with the TO220FullPAK package. In order to greatly reduce the impact of the internal isolation of the FullPAK on the thermal performance, Infineon is applying it´s new diffusion soldering process for attaching the chip to the leadframe. The result of this is nearly identical thermal characteristics to that of the SiC diodes in the non-isolated TO220 package. Features • • • • • • • • Revolutionary semiconductor material - Silicon Carbide Nearly no reverse / forward recovery charge High surge current capability Fully isolated package with nearly similar Rth,jc as the standard T0220 Suitable for high temperature operation Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Switching behavior independent of forward current, switching speed and temperature Benefits • • • • • • System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Good thermal performance without the need for additional isolation layer and washer Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures and less fans Reduced EMI Applications Fully isolated TO220 package for e.g. CCM PFC; Motor Drives; Solar Applications; UPS Table 1 Key Performance Parameters Parameter Value Unit VDC 600 V QC 8 nC IF @ TC < 100°C 4 Table 2 A Pin Definition Pin 1 Pin2 Pin 3 C A n.a. Type / Ordering Code Package IDV04S60C PG-TO220 FullPAK Marking D04S60C Related Links IFX SiC Diodes Webpage 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2010-01-08 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Table of Contents Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 3 Rev. 2.0, 2010-01-08 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Maximum ratings 2 Maximum ratings Table 3 Maximum ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition A TC= < 110°C Continuous forward current IF - - 4 Surge non-repetitive IF, SM - - 32 TC= 25°C, tp = 10 ms - - 23 TC= 150°C, tp = 10 ms TC= 25°C, tp = 10 µs forward current, sine halfwave Non-repetitive peak forward current IF, max - - 190 i² t value ∫i²dt - - 4 - A²s TC= 25°C, tp = 10 ms 2 TC= 150°C, tp = 10 ms Repetitive peak reverse voltage VRRM - - 600 V Tj= 25°C Diode dv/dt ruggedness dv/dt - - 50 V/ns VR= 0...480 V Power dissipation Ptot - - 26 W TC= 25 °C Operating and storage temperature Tj; Tstg - 55 - 175 °C - - 50 Ncm Mounting torque 3 Thermal characteristics Table 4 Thermal characteristics TO-220 FullPAK Parameter Symbol Values Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 5.6 Thermal resistance, junction ambient RthJA - - 62 Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 Final Data Sheet 4 M2.5 screws Note / Test Condition K/W leaded °C 1.6 mm (0.063 in.) from case for 10 s Rev. 2.0, 2010-01-08 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Electrical characteristics 4 Electrical characteristics Table 5 Static characteristics Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition V Tj= 25 °C, IR= 0.05 mA DC blocking voltage VDC 600 - - Diode forward voltage VF - 1.7 1.9 IF= 4 A, Tj= 25 °C - 2 2.4 IF= 4 A, Tj= 150 °C - 0.5 50 - 2 500 Reverse current Table 6 IR IR= 600 V, Tj=25 °C µA IR= 600 V, Tj=150 °C AC characteristics Parameter Symbol Total capacitive charge 1) Switching time Values Unit Note / Test Condition Min. Typ. Max. Qc - 8 - nC VR= 400 V, F ≤I Fmax tc - - <10 ns diF /dt =200 A/μs, Tj=150 °C C - 130 - pF VR= 1 V, f= 1 MHz - 20 - VR= 300 V, f= 1 MHz - 20 - VR= 600 V, f= 1 MHz 1)tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. Final Data Sheet 5 Rev. 2.0, 2010-01-08 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 7 Power dissipation Diode forward current Ptot = f(TC) IF=f(TC); T j≤ 175 °C Table 8 Typ. forward characteristic IF=f(V F); tp=400 µ s; parameter: Tj Final Data Sheet Typ. forward characteristic in surge current IF=f(VF); tp=400 µs; parameter: Tj 6 Rev. 2.0, 2010-01-08 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Electrical characteristics diagrams Table 9 Typ. capacitance charge vs. current slope1) Typ. reverse current vs. reverse voltage QD=f(diF/dt)4); Tj= 150 °C; IF ≤ IF max I R =f(VR) 1) Only capacitive charge occuring, guaranteed by design Table 10 Typ. transient thermal impedance Typ. capacitance vs. reverse voltage Zthjc=f(tp) ; parameter: D = tP / T C=f(VR); TC=25 °C, f=1 MHz Final Data Sheet 7 Rev. 2.0, 2010-01-08 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Electrical characteristics diagrams Table 11 Typ. C stored energy EC=f(VR) Final Data Sheet 8 Rev. 2.0, 2010-01-08 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Package outlines 6 Package outlines Figure 1 Outlines TO-220 FullPAK, dimensions in mm/inches Final Data Sheet 9 Rev. 2.0, 2010-01-08 2nd Generation thinQ!™ SiC Schottky Diode IDV04S60C Revision History 7 Revision History 2nd Generation thinQ!™ 2nd Generation thinQ!™ SiC Schottky Diode Revision History: 2010-01-08, Rev. 2.0 Previous Revision: Revision Subjects (major changes since last revision) 2.0 Release of final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Edition 2010-01-08 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 10 Rev. 2.0, 2010-01-08