IDD04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior PG-TO252 • High surge current capability • Pb-free lead plating; RoHS compliant 3 • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) 1 2 • Optimized for high temperature operation thinQ! 2G Diode specially designed for fast switching applications like: • SMPS e.g.; CCM PFC; typ Pout= 400 - 800W • Motor Drives; Solar applications; UPS Type Package Marking Pin 1 Pin 2 Pin 3 IDD04S60C PG-TO252 D04S60C n.c. A C Maximum ratings Parameter Symbol Conditions Continuous forward current IF RMS forward current I F,RMS Surge non-repetitive forward current, I F,SM sine halfwave Value T C<130 °C 4 T C <100°C 6 f =50 Hz 5.6 T C=25 °C, t p=10 ms 32.6 Unit A Repetitive peak forward current I F,RM T j=150 °C, T C=100 °C, D =0.1 19.6 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 200 i ²t value ∫i 2dt T C=25 °C, t p=10 ms 5.3 A2s Repetitive peak reverse voltage V RRM 600 V Diode dv/dt ruggedness dv/ dt V R = 0….480V 50 V/ns Power dissipation P tot T C=25 °C 42 W Operating and storage temperature T j, T stg -55 ... 175 °C Rev. 2.3 page 1 2013-02-12 IDD04S60C Parameter Values Symbol Conditions Unit min. typ. max. - - 3.6 - - 75 - - 50 - - 260 °C 600 - - V Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA Soldering temperature reflowsoldering Tsold SMD version, device on PCB, minmal footprint SMD Version, device on PCB, 6 cm2 cooling3) reflow MSL 3 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.05 mA Diode forward voltage VF I F=4 A, T j=25 °C - 1.7 1.9 I F=4 A, T j=150 °C - 2 2.4 I F =_ A, T j= 25°C 1.9 2.1 I F =_ A, T j= 150°C 2.3 2.9 Reverse current IR V R=600 V, T j=25 °C - 0.5 50 V R=600 V, T j=150 °C - 2 500 - 8 - nC - - <10 ns pF µA AC characteristics Total capacitive charge Qc Switching time4) tc V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C C V R=1 V, f = MHz - 130 - V R=300 V, f =1 MHz - 20 - V R=600 V, f =1 MHz - 20 - Total capacitance 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 5ms at 20 mA. Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain connection. PCB is vertikal with out blown air. 3) 4) tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 5) Only capacitive charge occuring, guaranteed by design. 6) Repetitive condition defined by Tj≤ 175°C Rev. 2.3 page 2 2013-02-12 IDD04S60C 1 Power dissipation 2 Diode forward current P tot=f(T C) I F=f(T C)4); T j≤175 °C; parameter: D= tp/T 40 35 35 30 30 25 0.1 20 IF [A] Ptot [W] 25 20 0.3 15 15 0.5 10 10 0.7 DC 5 5 0 0 25 50 75 100 125 150 175 200 25 50 75 100 TC [°C] 125 150 175 TC [°C] 3 Typ. forward characteristic 4 Typ. forward characteristic in surge current I F=f(V F); t p=400 µs; parameter: Tj mode I F=f(V F); t p=400 µs; parameter: Tj 8 40 -55ºC 175ºC 150ºC 150ºC 25ºC 7 100ºC IF 30 IF 6 IF [A] IF [A] 5 4 3 -55ºC 20 175ºC 25ºC 2 10 100ºC 1 0 0 0 1 2 3 4 VF [V] Rev. 2.3 0 2 4 6 8 10 VF [V] page 3 2013-02-12 IDD04S60C 5 Max. repetitive pulse current Ipulse=f(tP) 6 Typ. reverse current vs. reverse voltage 4)5) I R=f(V R); parameter: Tj ; parameter TC 101 250 100 200 150 IR [µA] Ipulse[A] 10-1 175 °C 150 °C 10-2 100 °C 100 25 °C 10-3 25% 50 -55 °C 10-4 75% 100 125% 200 300 400 500 600 0 10-5 10-4 10-3 10-2 10-1 100 tp[s] VR [V] 7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z thJC=f(t p); parameter: D = t P /T C =f(V R); T C=25 °C, f =1 MHz 101 200 175 0.5 150 100 ZthJC [K/W] 0.2 125 C [pF] 0.1 0.05 75 0.02 10-1 100 50 single pulse 25 10-2 0 10-5 10-4 10-3 10-2 10-1 t [s] Rev. 2.3 10-1 100 101 102 103 VR [V] page 4 2013-02-12 IDD04S60C 9 Typ. C stored energy 10 Typ. capacitance charge vs. current slope E C=f(V R) Q C=f(di F/dt )5); T j=150 °C; I F≤I F,max 3.5 10 3.0 8 6 2.0 Qc [nC] Ec [µC] 2.5 1.5 4 1.0 2 0.5 0.0 0 0 200 400 600 VR [V] Rev. 2.3 100 400 700 1000 diF/dt [A/µs] page 5 2013-02-12 IDD04S60C Package Outline:PG-TO252-3-1/TO252-3-11/TO252-3-21 Rev. 2.3 page 6 2013-02-12 IDD04S60C Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support , automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support systems are intended to be implanted in the human body and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 7 2013-02-12