IRF 30ETH06STRR

Bulletin PD-21064 rev. B 11/06
30ETH06SPbF
30ETH06-1PbF
Hyperfast Rectifier
Features
•
•
•
•
•
•
Hyperfastfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
125°C Operating Junction Temperature
Dual Diode Center Tap
Lead-Free ("PbF" suffix)
trr = 28ns typ.
IF(AV) = 30Amp
VR = 600V
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
Max
Units
600
V
30
A
VRRM
Peak Repetitive Reverse Voltage
IF(AV)
Average Rectifier Forward Current
@ TC = 103°C
IFSM
Non Repetitive Peak Surge Current
@ TJ = 25°C
TJ
Operating Junction Temperature
- 65 to 125
TSTG
Operating Storage Temperature
- 65 to 150
200
°C
Case Styles
30ETH06SPbF
30ETH06-1PbF
Base
Cathode
2
2
3
1
N/C
Anode
D2PAK
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3
1
N/C
Anode
TO-262
1
30ETH06SPbF, 30ETH06-1PbF
Bulletin PD-21064 rev. B 11/06
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VBR, Vr
Breakdown Voltage,
Blocking Voltage
VF
Forward Voltage
IR
Min Typ Max Units Test Conditions
600
Reverse Leakage Current
-
-
V
IR = 100μA
-
2.0
2.6
V
IF = 30A, TJ = 25°C
-
1.34 1.75
V
IF = 30A, TJ = 150°C
-
0.3
50
μA
VR = VR Rated
-
60
500
μA
TJ = 150°C, VR = VR Rated
CT
Junction Capacitance
-
33
-
pF
VR = 600V
LS
Series Inductance
-
8.0
-
nH
Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
trr
IRRM
Qrr
Min Typ Max Units Test Conditions
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
-
28
35
ns
-
31
-
TJ = 25°C
IF = 30A
77
-
TJ = 125°C
-
3.5
-
VR = 200V
diF /dt = 200A/μs
-
7.7
-
-
65
-
-
345
-
A
IF = 1.0A, diF/dt = 50A/μs, VR = 30V
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Min
Typ
Max
Units
TJ
Parameters
Max. Junction Temperature Range
- 65
-
125
°C
TStg
Max. Storage Temperature Range
- 65
-
150
RthJC
Thermal Resistance, Junction to Case
Per Leg
-
0.7
1.1
RthJA c
Thermal Resistance, Junction to Ambient
Per Leg
-
-
70
RthCS d
Thermal Resistance, Case to Heatsink
-
0.2
-
Weight
-
2.0
-
g
-
0.07
-
(oz)
6.0
-
12
Kg-cm
5.0
-
10
lbf.in
Mounting Torque
Marking Device
°C/W
30ETH06S
Case style D2Pak
30ETH06-1
Case style TO-262
c Typical Socket Mount
d Mounting Surface, Flat, Smooth and Greased
2
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30ETH06SPbF, 30ETH06-1PbF
Bulletin PD-21064 rev. B 11/06
1000
Reverse Current - I R (μA)
Instantaneous Forward Current - I F (A)
1000
100
Tj = 175˚C
150˚C
100
125˚C
10
100˚C
1
0.1
25˚C
0.01
0.001
0.0001
0
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Junction Capacitance - C T (pF)
1000
T = 175˚C
J
10
T = 150˚C
J
T = 25˚C
J
1
T J = 25˚C
100
10
0
0.5
1
1.5
2
2.5
3
3.5
0
100
200
300
400
500
600
Forward Voltage Drop - VFM (V)
Reverse Voltage - VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Thermal Impedance Z thJC (°C/W)
10
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.001
0.00001
PDM
t1
t2
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (Seconds)
1
10
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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3
30ETH06SPbF, 30ETH06-1PbF
Bulletin PD-21064 rev. B 11/06
90
Average Power Loss ( Watts )
Allowable Case Temperature (°C)
180
160
140
DC
120
Square wave (D = 0.50)
100 Rated Vr applied
see note (3)
80
RMS Limit
70
60
DC
50
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
40
30
20
10
0
80
0
0
5 10 15 20 25 30 35 40 45
90
5 10 15 20 25 30 35 40 45
Average Forward Current - IF(AV) (A)
Average Forward Current - IF(AV) (A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
1200
V R = 200V
T J = 125˚C
T J = 25˚C
IF = 30 A
IF = 15 A
80
1000
70
800
Qrr ( nC )
trr ( ns )
60
50
40
30
IF = 30 A
IF = 15 A
600
400
20
200
10
V R = 200V
T J = 125˚C
T J = 25˚C
0
100
1000
di F /dt (A/μs )
Fig. 7 - Typical Reverse Recovery vs. di F /dt
0
100
1000
di F /dt (A/μs )
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
4
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30ETH06SPbF, 30ETH06-1PbF
Bulletin PD-21064 rev. B 11/06
Reverse Recovery Circuit
VR = 200V
0.01 Ω
L = 70µH
D.U.T.
diF /dt
dif/dt
ADJUST
D
IRFP250
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
trr
IF
tb
ta
0
Q rr
2
I RRM
4
0.5 I RRM
di(rec)M/dt
5
0.75 I RRM
1
diFf /dt
1. diF/dt - Rate of change of current through zero
crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from zero
crossing point of negative going IF to point where
a line passing through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by t rr
and IRRM
t rr x I RRM
Q rr =
2
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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5
30ETH06SPbF, 30ETH06-1PbF
Bulletin PD-21064 rev. B 11/06
Outline Table
Conform to JEDEC outline D2Pak (SMD-220)
Dimensions in millimeters and (inches)
Modified JEDEC outline TO-262
Dimensions in millimeters and (inches)
6
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30ETH06SPbF, 30ETH06-1PbF
Bulletin PD-21064 rev. B 11/06
Tape & Reel Information
Dimensions in millimeters and (inches)
Part Marking Information
D2PAK
THIS IS A 30ETH06S
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
30ETH06S
DATE CODE
YEAR 0 = 2000
WEEK 02
P = LEAD-FREE
ASSEMBLY
LOT CODE
TO-262
THIS IS A 30ETH06-1
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
INTERNATIONAL
RECTIFIER
LOGO
30ETH06-1
DATE CODE
ASSEMBLY
LOT CODE
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PART NUMBER
YEAR 0 = 2000
WEEK 02
P = LEAD-FREE
7
30ETH06SPbF, 30ETH06-1PbF
Bulletin PD-21064 rev. B 11/06
Ordering Information Table
Device Code
30
E
T
H
06
S
1
2
3
4
5
6
1
-
2
-
E
= Single Diode
3
-
T
= TO-220, D2Pak
4
-
H
= HyperFast Recovery
5
-
Voltage Rating (06 = 600V)
6
-
yS
7
-
TRL PbF
7
8
Current Rating (30 = 30A)
= D2Pak
y -1 = TO-262
y none = Tube (50 pieces)
y TRL = Tape & Reel (Left Oriented, for D2PAk package)
6
y TRR = Tape & Reel (Right Oriented, for D 2PAk package)
8
-
y none = Standard Production
y PbF = Lead-Free
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/06
8
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