SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS(on) 8.4 mΩ ID 73 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP73N03S2L-08 Package P- TO220 -3-1 Ordering Code Q67042-S4037 Marking SPB73N03S2L-08 P- TO263 -3-2 Q67042-S4036 2N03L08 SPI73N03S2L-08 P- TO262 -3-1 Q67042-S4081 2N03L08 2N03L08 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C, Value Unit A ID 73 1) 62 ID puls 320 EAS 170 Repetitive avalanche energy, limited by Tjmax 2) EAR 10 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 107 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=73A, V DD=25V, RGS=25Ω kV/µs IS=73A, V DS=24, di/dt=200A/µs, T jmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2003-04-24 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 0.9 1.4 - - 62 - - 40 Characteristics Thermal resistance, junction - case RthJC SMD version, device on PCB: RthJA @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID=55µA Zero gate voltage drain current µA IDSS V DS=30V, VGS=0V, Tj=25°C - 0.01 1 V DS=30V, VGS=0V, Tj=175°C - 10 100 - 1 100 Gate-source leakage current IGSS nA V GS=20V, VDS=0V Drain-source on-state resistance RDS(on) mΩ V GS=4.5V, I D=36A - 9.9 13.4 V GS=4.5V, I D=36A, SMD version - 9.5 13.1 V GS=10V, I D=36A - 6.8 8.4 V GS=10V, I D=36A, SMD version - 6.5 8.1 Drain-source on-state resistance4) RDS(on) 1Current limited by bondwire ; with an RthJC = 1.4K/W the chip is able to carry ID= 87A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2003-04-24 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 32 63 - Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =62A Input capacitance Ciss VGS =0V, VDS =25V, - 1290 1710 pF Output capacitance Coss f=1MHz - 500 670 Reverse transfer capacitance Crss - 130 190 Turn-on delay time td(on) VDD =15V, VGS =10V, - 7.7 11.6 Rise time tr ID =18A, - 20 30 Turn-off delay time td(off) RG =4.7Ω - 31.5 47.3 Fall time tf - 19 28.5 - 4 5 - 12 18 - 34.7 46.2 V(plateau) VDD =24V, ID =36A - 3.6 - V IS - - 73 A - - 320 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =24V, ID =36A VDD =24V, ID =36A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0V, IF=73A - 0.96 Reverse recovery time trr V R=15V, I F=lS, - 27 40 ns Reverse recovery charge Qrr diF/dt=100A/µs - 21 31 nC Page 3 1.28 V 2003-04-24 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 4 V parameter: VGS≥ 10 V SPP73N03S2L-08 SPP73N03S2L-08 120 80 W A 100 60 80 ID P tot 90 50 70 60 40 50 30 40 30 20 20 10 10 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPP73N03S2L-08 10 1 SPP73N03S2L-08 K/W A t = 1.6µs p 0 V DS 2 10 µs 10 -1 10 -2 R DS (on ) ID = 10 Z thJC /I D 10 100 µs D = 0.50 10 1 0.20 0.10 1 ms single pulse 10 0.05 0.02 -3 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2003-04-24 0 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPP73N03S2L-08 170 SPP73N03S2L-08 28 Ptot = 107W mΩ h g f V [V] GS a 140 b 3.0 b 3.5 c 4.0 d 4.5 e 5.0 f 5.5 dg 6.0 h 10.0 e ID 120 100 80 c d e 24 22 R DS(on) A 20 18 16 14 12 60 c 40 f 8 h g 6 b 4 VGS [V] = 20 0 0.5 1 1.5 2 2.5 3 3.5 b 3.5 2 a 0 10 4 V 0 5 0 c 4.0 20 d 4.5 e 5.0 40 f 5.5 g h 6.0 10.0 60 80 A 100 VDS 140 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 140 80 S A 60 ID g fs 100 50 80 40 60 30 40 20 20 0 10 0 1 2 3 4 V 6 VGS 0 0 25 50 75 100 A 150 ID Page 5 2003-04-24 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 36 A, VGS = 10 V parameter: VGS = VDS SPP73N03S2L-08 2.5 19 mΩ V 0,4mA 14 VGS(th) R DS(on) 16 12 1.5 98% 10 55µA 8 1 typ 6 4 0.5 2 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 Tj 180 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 4 10 3 SPP73N03S2L-08 A pF 10 10 2 10 1 IF C Ciss 3 Coss T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) Crss 10 T j = 175 °C (98%) 2 0 10 5 10 15 20 V 30 VDS 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-04-24 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D=73A, VDD = 25 V, RGS = 25 Ω parameter: ID = 36 A pulsed SPP73N03S2L-08 180 16 mJ V 140 VGS E AS 12 120 10 0,2 VDS max 0,8 VDS max 100 8 80 6 60 4 40 2 20 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 10 20 30 40 nC 55 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPP73N03S2L-08 V (BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-04-24 SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP73N03S2L-08, BSPB73N03S2L-08 and BSPI73N03S2L-08, for simplicity the device is referred to by the term SPP73N03S2L-08, SPB73N03S2L-08 and SPI73N03S2L-08 throughout this documentation Page 8 2003-04-24