DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC846; BC847 NPN general purpose transistors Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856 and BC857. handbook, halfpage 3 3 MARKING TYPE NUMBER 1 MARKING CODE TYPE NUMBER MARKING CODE(1) BC846 1D∗ BC847A 1E∗ BC846A 1A∗ BC847B 1F∗ BC846B 1B∗ BC847C 1G∗ BC847 1H* 1 2 2 Top view MAM255 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC846 − 80 V BC847 − 50 V BC846 − 65 V BC847 − 45 V − 6 V collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA open collector Ptot total power dissipation − 250 mW Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 23 2 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current IEBO emitter cut-off current hFE DC current gain CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = 30 V − − 15 nA IE = 0; VCB = 30 V; Tj = 150 °C − − 5 µA IC = 0; VEB = 5 V − − 100 nA IC = 10 µA; VCE = 5 V; see Figs 2, 3 and 4 − 90 − BC846B; BC847B − 150 − BC847C − 270 − BC846A; BC847A DC current gain IC = 2 mA; VCE = 5 V; see Figs 2, 3 and 4 110 − 450 BC847 110 − 800 BC846A;BC847A 110 180 220 BC846 BC846B; BC847B 200 290 450 BC847C 420 520 800 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 90 250 mV IC = 100 mA; IB = 5 mA − 200 600 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; note 1 − 700 − mV IC = 100 mA; IB = 5 mA; note 1 − 900 − mV VBE base-emitter voltage IC = 2 mA; VCE = 5 V; note 2 580 660 700 mV IC = 10 mA; VCE = 5 V; note 2 − − 770 mV IE = ie = 0; VCB = 10 V; f = 1 MHz; − 2.5 − pF Cc collector capacitance fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz; 100 − − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 2 10 dB Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. 1999 Apr 23 3 − Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 MBH723 250 handbook, full pagewidth hFE 200 VCE = 5 V 150 100 50 0 10−2 10−1 1 102 10 IC (mA) 103 BC846A; BC847A. Fig.2 DC current gain; typical values. MBH724 300 handbook, full pagewidth VCE = 5 V hFE 200 100 0 10−2 10−1 1 10 BC846B; BC847B. Fig.3 DC current gain; typical values. 1999 Apr 23 4 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 MBH725 600 handbook, full pagewidth VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 BC847C. Fig.4 DC current gain; typical values. 1999 Apr 23 5 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Apr 23 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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