DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general purpose transistors Product specification Supersedes data of 1997 Mar 27 1999 Apr 15 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification. DESCRIPTION handbook, halfpage1 PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547. 3 2 3 2 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC556 − −80 V BC557 − −50 V BC556 − −65 V BC557 − −45 V collector-emitter voltage open base VEBO emitter-base voltage − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA open collector Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C 1999 Apr 15 Tamb ≤ 25 °C 2 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 250 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V − −1 −15 nA IE = 0; VCB = −30 V; Tj = 150 °C − − −4 µA IEBO emitter cut-off current IC = 0; VEB = −5 V − − −100 nA hFE DC current gain IC = −2 mA; VCE = −5 V; see Figs 2, 3 and 4 125 − 475 BC557 125 − 800 BC556A 125 − 250 BC556B; BC557B 220 − 475 BC556 420 − 800 IC = −10 mA; IB = −0.5 mA − −60 −300 mV IC = −100 mA; IB = −5 mA − −180 −650 mV BC557C VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA; note 1 − −750 − mV IC = −100 mA; IB = −5 mA; note 1 − −930 − mV IC = −2 mA; VCE = −5 V; note 2 −600 −650 −750 mV VBE base-emitter voltage IC = −10 mA; VCE = −5 V; note 2 − − −820 mV Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 3 − pF Ce emitter capacitance IC = ic = 0; VEB = −0.5 V; f = 1 MHz − 10 − pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz F noise figure IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 2 10 dB Notes 1. VBEsat decreases by about −1.7 mV/K with increasing temperature. 2. VBE decreases by about −2 mV/K with increasing temperature. 1999 Apr 15 3 − Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 MBH726 300 handbook, full pagewidth hFE 200 VCE = −5 V 100 0 −10−1 −1 −102 −10 IC (mA) −103 BC556A. Fig.2 DC current gain; typical values. MBH727 400 handbook, full pagewidth hFE VCE = −5 V 300 200 100 0 −10−2 −10−1 −1 −10 BC556B; BC557B. Fig.3 DC current gain; typical values. 1999 Apr 15 4 −102 IC (mA) −103 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 MBH728 600 handbook, full pagewidth hFE 500 VCE = −5 V 400 300 200 100 0 −10−2 −10−1 −1 −10 BC557C. Fig.4 DC current gain; typical values. 1999 Apr 15 5 −102 IC (mA) −103 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1999 Apr 15 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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