DISCRETE SEMICONDUCTORS DATA SHEET PMBT2222; PMBT2222A NPN switching transistors Product data sheet Supersedes data of 1999 Apr 27 2004 Jan 22 NXP Semiconductors Product data sheet PMBT2222; PMBT2222A NPN switching transistors FEATURES PINNING • High current (max. 600 mA) PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complements: PMBT2907 and PMBT2907A. handbook, halfpage 3 3 MARKING 1 TYPE NUMBER MARKING CODE(1) PMBT2222 *1B PMBT2222A *1P 1 Top view 2 2 MAM255 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER PMBT2222 PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads PMBT2222A 2004 Jan 22 2 VERSION SOT23 NXP Semiconductors Product data sheet NPN switching transistors PMBT2222; PMBT2222A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS UNIT − 60 V − 75 V PMBT2222 − 30 V PMBT2222A − 40 V PMBT2222 − 5 V PMBT2222A − 6 V PMBT2222A VEBO MAX. open emitter PMBT2222 VCEO MIN. collector-emitter voltage emitter-base voltage open base open collector IC collector current (DC) − 600 mA ICM peak collector current − 800 mA IBM peak base current − 200 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 500 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. MAX. UNIT collector cut-off current PMBT2222 IE = 0; VCB = 50 V − 10 nA IE = 0; VCB = 50 V; Tj = 125 °C − 10 µA IE = 0; VCB = 60 V − 10 nA IE = 0; VCB = 60 V; Tj = 125 °C − 10 µA − 10 nA collector cut-off current PMBT2222A IEBO emitter cut-off current IC = 0; VEB = 5 V PMBT2222A 2004 Jan 22 3 NXP Semiconductors Product data sheet NPN switching transistors SYMBOL hFE PARAMETER CONDITIONS IC = 1 mA; VCE = 10 V 50 − IC = 10 mA; VCE = 10 V 75 − IC = 10 mA; VCE = 10 V; Tamb = −55 °C 35 − IC = 150 mA; VCE = 10 V 100 300 IC = 150 mA; VCE = 1 V 50 − PMBT2222 30 − PMBT2222A 40 − − 400 mV − 300 mV − 1 .6 V − 1 V − 1 .3 V 0.6 1.2 V − 2 .6 V − 2 V − 8 pF PMBT2222 − 30 pF PMBT2222A − 25 pF 250 − MHz 300 − MHz − 4 dB − 35 ns − 15 ns collector-emitter saturation voltage IC = 500 mA; VCE = 10 V IC = 150 mA; IB = 15 mA; note 1 PMBT2222A IC = 500 mA; IB = 50 mA; note 1 PMBT2222 PMBT2222A base-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 PMBT2222 PMBT2222A base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 PMBT2222 PMBT2222A Cc collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz Ce emitter capacitance IC = Ic = 0; VEB = 500 mV; f = 1 MHz transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz PMBT2222 PMBT2222A F UNIT − collector-emitter saturation voltage fT MAX. 35 PMBT2222 VBEsat MIN. IC = 0.1 mA; VCE = 10 V DC current gain DC current gain VCEsat PMBT2222; PMBT2222A noise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 1 kHz Switching times (between 10% and 90% levels); (see Fig.2) ton turn-on time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA td delay time tr rise time − 20 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Jan 22 4 NXP Semiconductors Product data sheet NPN switching transistors PMBT2222; PMBT2222A VBB handbook, full pagewidth RB oscilloscope VCC RC Vo (probe) 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 2004 Jan 22 5 oscilloscope NXP Semiconductors Product data sheet NPN switching transistors PMBT2222; PMBT2222A PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Jan 22 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 6 NXP Semiconductors Product data sheet NPN switching transistors PMBT2222; PMBT2222A DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jan 22 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp8 Date of release: 2004 Jan 22 Document order number: 9397 750 12457