DISCRETE SEMICONDUCTORS DATA SHEET BSR15; BSR16 PNP switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet PNP switching transistors BSR15; BSR16 FEATURES PINNING • High current (max. 600 mA) PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Medium power switching. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complements: BSR13 and BSR14. handbook, halfpage 3 3 MARKING 1 TYPE NUMBER MARKING CODE(1) BSR15 T7* BSR16 T8* 2 1 Top view 2 MAM256 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BSR15 PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads BSR16 2004 Jan 13 2 VERSION SOT23 NXP Semiconductors Product data sheet PNP switching transistors BSR15; BSR16 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − −60 V BSR15 − −40 V BSR16 − −60 V − −5 V VCBO collector-base voltage open emitter VCEO collector-emitter voltage open base VEBO emitter-base voltage open collector IC collector current (DC) − −600 mA ICM peak collector current − −800 mA IBM peak base current − −200 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Jan 13 3 VALUE UNIT 500 K/W NXP Semiconductors Product data sheet PNP switching transistors BSR15; BSR16 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. MAX. UNIT collector cut-off current IE = 0; VCB = −50 V − −20 nA IE = 0; VCB = −50 V; Tj = 150 °C − −20 µA IE = 0; VCB = −50 V − −10 nA IE = 0; VCB = −50 V; Tj = 150 °C − −10 µA − −50 nA 35 − 75 − BSR15 50 − BSR16 100 − BSR15 75 − BSR16 100 − 100 300 30 − BSR15 collector cut-off current BSR16 IEBO emitter cut-off current IC = 0; VEB = −5 V hFE DC current gain IC = −0.1 mA; VCE = −10 V BSR15 BSR16 DC current gain DC current gain IC = −1 mA; VCE = −10 V IC = −10 mA; VCE = −10 V DC current gain IC = −150 mA; VCE = −10 V; note 1 DC current gain IC = −500 mA; VCE = −10 V; note 1 BSR15 50 − collector-emitter saturation voltage IC = −150 mA; IB = −15 mA − −400 mV IC = −500 mA; IB = −50 mA − −1.6 V base-emitter saturation voltage IC = −150 mA; IB = −15 mA − −1.3 V IC = −500 mA; IB = −50 mA − −2.6 V BSR16 VCEsat VBEsat Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 8 pF Ce emitter capacitance IC = ic = 0; VEB = −2 V; f = 1 MHz − 30 pF fT transition frequency IC = −50 mA; VCE = −20 V; f = 100 MHz 200 − MHz − 40 ns − 12 ns Switching times (between 10% and 90% levels); (see Fig.2) ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA ton turn-on time td delay time tr rise time − 30 ns toff turn-off time − 365 ns ts storage time − 300 ns tf fall time − 65 ns Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Jan 13 4 NXP Semiconductors Product data sheet PNP switching transistors BSR15; BSR16 VBB handbook, full pagewidth RB oscilloscope VCC RC Vo (probe) 450 Ω (probe) 450 Ω R2 Vi DUT R1 MGD624 Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = 3.5 V; VCC = −29.5 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 2004 Jan 13 5 oscilloscope NXP Semiconductors Product data sheet PNP switching transistors BSR15; BSR16 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Jan 13 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 6 NXP Semiconductors Product data sheet PNP switching transistors BSR15; BSR16 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jan 13 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp8 Date of release: 2004 Jan 13 Document order number: 9397 750 12421