FINAL PRODUCT/PROCESS CHANGE NOTIFICATION Generic Copy 11-Apr-2006 SUBJECT: ON Semiconductor Final Product/Process Change Notification #15507 TITLE: Qualification of OSPI for Assembly/Test of 8/14/16 Lead SOIC Narrow Packages EFFECTIVE DATE: 11-Jun-2006 AFFECTED CHANGE CATEGORY(S): ON Semiconductor Assembly and Test AFFECTED PRODUCT DIVISION(S): Analog Power Management ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Matt Kas <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or Alan Garlington<[email protected]> NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. FPCNs are issued at least 60 days prior to implementation of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact your local ON Semiconductor Sales Office. DESCRIPTION AND PURPOSE: Final Process Change Notice to notify customers of the capacity expansion of the ON Semiconductor assembly/test location at Carmona, Philippines (OSPI) for 8/14/16 lead narrow SOIC packages. The devices listed on this FPCN have historically been assembled/tested at the ASE assembly/test facility located in Chung Li, Taiwan. At the expiration of this Initial PCN and subsequent Final PCN, these devices may be processed at either location. The ON Semiconductor facility at Carmona, Philippines is fully qualified and has been producing the SOIC narrow body products for many years. The capacity expansion will involve duplication of the existing equipment set currently in production. Please refer to Initial PCN notice number 15335 and Update Notice 15453 which are both related to this change. Issue Date: 11 Apr, 2006 Rev.08-24-05 Page 1 of 2 Final Product/Process Change Notification #15507 RELIABILITY DATA SUMMARY: Standard equipment set certification procedures will be followed prior to being placed into production. Reliability qualification is through qualification by similarity with existing production. ELECTRICAL CHARACTERISTIC SUMMARY: Electrical performance will not change. Device parameters will continue to meet all data sheet specifications, and reliability will continue to meet or exceed ON Semiconductor standards. CHANGED PART IDENTIFICATION: Assembly lot traceability codes can be used to determine the assembly factory AFFECTED DEVICE LIST: PARTS MC1403D MC1403DR2 MC26LS30D MC26LS30DR2 MC33232D MC33232DG MC33232DR2 MC33232DR2G MC33260D MC33260DG MC33260DR2 MC33260DR2G MC33364D MC33364D1 MC33364D1R2 MC33364D2 MC33364D2R2 MC33364DG MC33364DR2 MC33364DR2G MC33368D MC33368DG MC33368DR2 MC33368DR2G MC33567D-1R2G NCP1603D100R2 SC33262DR2 SC33262DR2G SC78L12ABDR2 UAA2016AD UAA2016D Issue Date: 11 Apr, 2006 Rev.08-24-05 Page 2 of 2 Quality and Continuous Improvement Select Report Type Select Qualification Type Date: October 23, 2001 PCN: 11634 Gerry Ong Ross Velicaria Reliability Engineer Reliability Manager 632-808-3516 632-808-3534 1) Introduction: This reliability study was used to qualify the ON Semiconductor Carmona, Philippines assembly site (OSPI) for Pure tin(Sn) metal finish to be applied to it’s existing SOIC packages using SOIC 16, and 8 leads lead package as qualification vehicle. 2) Device Descriptions: Qual Lot ID Device Line Source Parent Tech Technology Package Polarity 1804 MC78L05ACD TEMC78L05D Qual Lot ID Device Line Source Parent Tech Technology Package Polarity Bipolar SOIC 8 Wafer Fab Site Assembly Site Final Test Site Reliability Lab Max. Current Die Size OSPI CARMONA OSPI CARMONA OSPI CARMONA 40mA 1.17 x 1.22mm Max. Voltage 30v Flag Size 1.778 x 2.286mm 1805 MC1413D D100P7KQ Darlington Transistor Bipolar SOIC 16 Wafer Fab Site Assembly Site Final Test Site Reliability Lab Max. Current Die Size OSPI CARMONA OSPI CARMONA OSPI CARMONA 500mA 1.727 x 2.515mm Max. Voltage 30v Flag Size 2.286 x 3.302mm Linear Voltage Regulator Related Qualification Report(s): The SOIC 16, and 8 lead packages are chosen as qual vehicles for pure tin plating of SOIC packages. SOIC 14 leads, an intermediate leadcount, is qualified by similarity OSPI Reliability Engineering Services 1 Quality and Continuous Improvement 3) Qualification Results Analysis: Environmental Stress Test Results Summary: ZERO REJECTS achieved for the following tests: Preconditioning: Mositure Level 1 (MSL1) HTOL: Ta = +145°C, Tj = +150°C to 504 Hrs HAST-PC: Ta = +130°C, RH = 85%, P = 18 PSIG to 96 Hrs TC-PC: Ta = -65°C to +150°C to 1000 cycles HTB: Ta = 175°C to 504 Hr AC-PC: Ta = +121°C, RH = 100%, P = 15 PSIG to 96 Hrs The complete test results are listed in the Test Summary section. The bold lettering in the Test Summary interval column indicates qualification point. The hours or cycles after the bold lettering are extended readout points. 4) Conclusion: The reliability test results reported herein qualify the pure Sn plating for use in SOIC 8, 14, and 16 lead packages at ON Semiconductor Carmona, Philippines (OSPI). The pure Sn plating for these products meets or exceeds ON Semiconductor's requirements for Product Reliability as set forth in “Product Reliability Qualification Process,” specification 12MSB17722C Issue G. OSPI Reliability Engineering Services 2 Quality and Continuous Improvement 5) Test Description & Condition: Auto-PC Autoclave - PC AUTOCLAVE + MOISTURE LEVEL PRECONDITIONING Autoclave is an environmental test which measures device resistance to moisture penetration and the resultant effects of galvanic corrosion. Autoclave is a highly accelerated and destructive test. Typical Test Conditions: TA = 121°C, rh = 100%, p = 15 psig Common Failure Modes: Parametric shifts, high leakage and/or catastrophic Common Failure Mechanisms: Die corrosion or contaminants such as foreign material on or within the package materials. Poor package sealing HAST-PC Highly Accelerated Stress Test - PC HIGHLY ACCELERATED STRESS TEST + MOISTURE LEVEL PRECONDITIONING HAST uses a pressurized environment to produce extremely severe temperature, humidity and bias conditions. HAST accelerates the same failure mechanisms as High Humidity High Temperature Bias. Test Conditions: TA = 131°C, rh = 85%, p = 18 psig Common Failure Modes: Parametric shifts, high leakage and/or catastrophic Common Failure Mechanisms: Die corrosion or contaminants such as foreign material on or within the package materials. Poor package sealing HTB High Temperature Bake HIGH TEMPERATURE BAKE High temperature storage life testing is performed to accelerate failure mechanisms which are thermally activated through the application of extreme temperatures. Test Conditions: TA = 175°C Common Failure Modes: Parametric shifts in leakage and gain Common Failure Mechanisms: Bulk die and diffusion defects HTOL High Temperature Operating Life HIGH TEMPERATURE OPERATING LIFE The purpose of this test is to evaluate the bulk stability of the die and to generate defects resulting from manufacturing aberrations that are manifested as time and stress-dependent failures. Test Conditions: TA = 145°C Common Failure Modes: Parametric shifts and catastrophic Common Failure Mechanisms: Foreign material, crack die, bulk die, metallization, wire and die bond defects TC-PC Temperature Cycling - PC TEMPERATURE CYCLING + MOISTURE LEVEL PRECONDITIONING The purpose of this test is to evaluate the ability of the device to withstand both exposure to extreme temperatures and transitions between temperature extremes. This testing will also expose excessive thermal mismatch between materials. Test Conditions: TA = -65°C to 150°C, air to air Common Failure Modes: Parametric shifts and catastrophic Common Failure Mechanisms: Wire bond, cracked or lifted die and package failure MSL-1 Moisture Level 1 MOISTURE LEVEL PRECONDITIONING These tests are performed to simulate the board mounting process where parts are subjected to a high temperature for a short duration. These tests detect mold compound delamination from the die and leadframe. The failure mechanisms are corrosion, fractured wirebonds and passivation cracks. 10TC + 24Hr Bake@125°C + 168Hr 85/85 + 3 IR@260°C + 1X Flux Immersion + DI Rinse Test Name Auto-PC Test Conditions & Bias TA = +121°C, RH = 100%, PSIG = 15 Lot ID 1804A Interval Test Summary SS Rej Comment 77 0 OSPI Reliability Engineering Services 3 Quality and Continuous Improvement 1804B 1804C 1805A 1805B 1805C HTB TA = 1750C 1804A 1804B 1804C Test Name Test Conditions & Bias Lot ID Interval 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 77 0 SS Rej Comment OSPI Reliability Engineering Services 4 Quality and Continuous Improvement 1805A 1805B 1805C HTOL TA=145oC, VCC=40V 1804A 1804B 1804C 1805A 1805B 1805C Test Name Test Conditions & Bias Lot ID 0 hour 77 0 504 hours 77 0 1008 hours 77 0 0 hour 77 0 504 hours 77 0 1008 hours 77 0 0 hour 77 0 504 hours 77 0 1008 hours 77 0 0 hour 77 0 250 hours 77 0 504 hours 77 0 0 hour 77 0 250 hours 77 0 504 hours 77 0 0 hour 77 0 250 hours 77 0 504 hours 77 0 0 hour 77 0 250 hours 77 0 504 hours 77 0 0 hour 77 0 250 hours 77 0 504 hours 77 0 0 hour 77 0 250 hours 77 0 504 hours 77 0 Interval SS Rej Comment OSPI Reliability Engineering Services 5 Quality and Continuous Improvement HAST - PC TA = +131°C, RH = 85%, PSIG = 18, VCC=40V 1804A 1804B 1804C 1805A 1805B 1805C TC - PC Air to Air; -65°C to +150°C 1804A 1804B 1804C Test Name Test Conditions & Bias Lot ID 0 hour 77 0 96 hours 77 0 192 hours 77 0 0 hour 77 0 96 hours 77 0 192 hours 77 0 0 hour 77 0 96 hours 77 0 192 hours 77 0 0 hour 77 0 96 hours 77 0 192 hours 77 0 0 hour 77 0 96 hours 77 0 192 hours 77 0 0 hour 77 0 96 hours 77 0 192 hours 77 0 0 cycles 77 0 500 cycles 77 0 1000 cycles 77 0 0 cycles 77 0 500 cycles 77 0 1000 cycles 77 0 0 cycles 77 0 500 cycles 77 0 1000 cycles 77 0 Interval SS Rej Comment OSPI Reliability Engineering Services 6 Quality and Continuous Improvement 1805A 1805B 1805C MSL1-260 10TC + 24Hr Bake@125°C + 168Hr 85/85 + 3x IR@260°C + 1X Flux Immersion + DI Rinse + Visual 1804A 1804B 1804C 1805A 1805B 1805C 0 cycles 77 0 500 cycles 77 0 1000 cycles 77 0 0 cycles 77 0 500 cycles 77 0 1000 cycles 77 0 0 cycles 77 0 500 cycles 77 0 1000 cycles 77 0 0 hour 231 0 Readout 231 0 0 hour 231 0 Readout 231 0 0 hour 231 0 Readout 231 0 0 hour 231 0 Readout 231 0 0 hour 231 0 Readout 231 0 0 hour 231 0 Readout 231 0 OSPI Reliability Engineering Services 7 Quality and Continuous Improvement OSPI Reliability Engineering Services 8