Product Overview

Product Overview
NCP5181: MOSFET / IGBT Drivers, High Voltage, High and Low Side, Dual
Input
For complete documentation, see the data sheet
Product Description
The NCP5181 is a High Voltage Power Mosfet Driver providing two outputs for direct drive of a 2 N-channel power Mosfets arranged
in a half-bridge (or any other high side + low side configuration).
It uses the bootstrap technique to insure a proper drive of the High side power switch. The driver works with 2 independent inputs to
accomodate any topology (including half-bridge, asymmetrical half-bridge, active clamp and full bridge).
Features
•
•
•
•
•
•
•
•
•
•
High Voltage Range: up to 600 V
dV/dt Immunity 50 V/nsec
Gate Drive Supply Range from 10 V to 20 V
High and Low DRV Outputs
Output Source / Sink Current Capability 1.1 A / 2.4 A
3.3 V and 5 V Input Logic Compatible
Up to Vcc Swing on Input Pins
Matched Propagation Delays between Both Channels
Outputs in Phase with the Inputs
Independent Logic Inputs to Accommodate All Topologies
For more features, see the data sheet
Applications
•
•
•
•
•
Bridge Inverter for UPS systems
High Power Energy Management
Half-bridge Power Converters
Full-bridge Converters
Any Complementary Drive Converters (asymmetrical halfbridge, active clamp)
Part Electrical Specifications
Product
Compliance
Status
Type
Number of
Drivers
Vin Max
(V)
VCC Max
(V)
Drive
Source/Si
nk Typ
(mA)
Rise Time
(ns)
Fall Time
(ns)
tp Max (ns) Package
Type
NCP5181DR2G
Pb-free
Active
MOSFET
2
600
20
1400 /
2200
40
40
170
SOIC-8
Active
MOSFET
2
600
20
1400 /
2200
20
20
170
PDIP-8
Halide free
NCP5181PG
Pb-free
Halide free
Application Diagram
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016