Product Overview NCP5181: MOSFET / IGBT Drivers, High Voltage, High and Low Side, Dual Input For complete documentation, see the data sheet Product Description The NCP5181 is a High Voltage Power Mosfet Driver providing two outputs for direct drive of a 2 N-channel power Mosfets arranged in a half-bridge (or any other high side + low side configuration). It uses the bootstrap technique to insure a proper drive of the High side power switch. The driver works with 2 independent inputs to accomodate any topology (including half-bridge, asymmetrical half-bridge, active clamp and full bridge). Features • • • • • • • • • • High Voltage Range: up to 600 V dV/dt Immunity 50 V/nsec Gate Drive Supply Range from 10 V to 20 V High and Low DRV Outputs Output Source / Sink Current Capability 1.1 A / 2.4 A 3.3 V and 5 V Input Logic Compatible Up to Vcc Swing on Input Pins Matched Propagation Delays between Both Channels Outputs in Phase with the Inputs Independent Logic Inputs to Accommodate All Topologies For more features, see the data sheet Applications • • • • • Bridge Inverter for UPS systems High Power Energy Management Half-bridge Power Converters Full-bridge Converters Any Complementary Drive Converters (asymmetrical halfbridge, active clamp) Part Electrical Specifications Product Compliance Status Type Number of Drivers Vin Max (V) VCC Max (V) Drive Source/Si nk Typ (mA) Rise Time (ns) Fall Time (ns) tp Max (ns) Package Type NCP5181DR2G Pb-free Active MOSFET 2 600 20 1400 / 2200 40 40 170 SOIC-8 Active MOSFET 2 600 20 1400 / 2200 20 20 170 PDIP-8 Halide free NCP5181PG Pb-free Halide free Application Diagram For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016