DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCX19 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistor BCX19 FEATURES PINNING • High current (500 mA) PIN • Low voltage (45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose amplification • Saturated switching and driver applications. handbook, halfpage DESCRIPTION 3 3 NPN transistor in a SOT23 plastic package. PNP complement: BCX17. 1 MARKING 1 TYPE NUMBER MARKING BCX19 2 2 CODE(1) Top view U8∗ MAM255 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. − MAX. UNIT VCBO collector-base voltage VCEO collector-emitter voltage open base; IC = 10 mA − 45 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 200 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C open emitter Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 12 2 50 V Philips Semiconductors Product specification NPN general purpose transistor BCX19 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IE = 0; VCB = 20 V MIN. − TYP. − MAX. UNIT 100 nA ICBO collector cut-off current IE = 0; VCB = 20 V; Tj = 150 °C − − 5 µA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 nA hFE DC current gain VCE = 1 V; note 1 IC = 100 mA 100 − 600 IC = 300 mA 70 − − IC = 500 mA 40 − − − − 620 VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 2 mV VBE base-emitter voltage IC = 500 mA; VCE = 1 V; notes 1 and 2 − − 1.2 V Cc collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz − 5 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz Notes 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. VBE decreases by approximately −2 mV/°C with increasing temperature. 1999 Apr 12 3 Philips Semiconductors Product specification NPN general purpose transistor BCX19 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Apr 12 EUROPEAN PROJECTION 4 Philips Semiconductors Product specification NPN general purpose transistor BCX19 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 12 5 Philips Semiconductors Product specification NPN general purpose transistor BCX19 NOTES 1999 Apr 12 6 Philips Semiconductors Product specification NPN general purpose transistor BCX19 NOTES 1999 Apr 12 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 12 Document order number: 9397 750 05581