PHILIPS JC337-25

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
JC337
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 27
Philips Semiconductors
Product specification
NPN general purpose transistor
JC337
PINNING
FEATURES
• Low current (max. 500 mA)
PIN
• Low voltage (max. 45 V).
APPLICATIONS
DESCRIPTION
1
base
2
collector
3
emitter
• General purpose switching and amplification,
e.g. driver and output stages of audio amplifiers.
handbook, halfpage1
DESCRIPTION
2
2
3
1
NPN transistor in a TO-92; SOT54 plastic package.
PNP complement: JC327.
3
MAM259
Fig.1
Simplified outline TO-92; SOT54
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
50
VCEO
collector-emitter voltage
open base
−
45
VEBO
emitter-base voltage
open collector
−
5
IC
collector current (DC)
−
500
mA
ICM
peak collector current
−
1
A
IBM
peak base current
−
200
mA
Tamb ≤ 25 °C; note 1
V
Ptot
total power dissipation
−
625
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27
2
Philips Semiconductors
Product specification
NPN general purpose transistor
JC337
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
0.2
K/mW
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IE = 0; VCB = 20 V
−
−
100
nA
IE = 0; VCB = 20 V; Tj = 150 °C
−
−
5
µA
IC = 0; VEB = 5 V
−
−
100
nA
160
−
400
40
−
−
collector-emitter saturation voltage IC = 500 mA; IB = 50 mA
−
−
700
mV
VBE
base-emitter voltage
IC = 500 mA; VCE = 1 V; note 1
−
−
1.2
V
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
5
−
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
−
−
MHz
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
IC = 100 mA; VCE = 1 V
hFE
DC current gain
VCEsat
JC337-25
IC = 500 mA; VCE = 1 V
Note
1. VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 27
3
Philips Semiconductors
Product specification
NPN general purpose transistor
JC337
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
1999 Apr 27
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
4
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN general purpose transistor
JC337
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 27
5
Philips Semiconductors
Product specification
NPN general purpose transistor
JC337
NOTES
1999 Apr 27
6
Philips Semiconductors
Product specification
NPN general purpose transistor
JC337
NOTES
1999 Apr 27
7
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© Philips Electronics N.V. 1999
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 27
Document order number:
9397 750 05417