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FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16450B
Generic Copy
Issue Date: 30-Jan-2012
TITLE: Fabrication site transfer and Cu wire conversion qualification.
PROPOSED FIRST SHIP DATE: 15-Jul-2012
AFFECTED CHANGE CATEGORY(S): ON Semiconductor Fab Site
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact your local ON Semiconductor Sales Office or <[email protected]>
SAMPLES: Contact your local ON Semiconductor Sales Office
ADDITIONAL RELIABILITY DATA:
Contact your local ON Semiconductor Sales Office or <[email protected]>
NOTIFICATION TYPE:
Final Product/Process Change Notification (FPCN)
Final change notification sent to customers. FPCNs are issued at least 90 days prior to
implementation of the change.
ON Semiconductor will consider this change approved unless specific conditions of acceptance are
provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>.
DESCRIPTION AND PURPOSE:
This FPCN is a follow up from IPCN #16450. ON Semiconductor is notifying customers that the Aizu
to CZ4 transfer and Au wire to Cu wire conversion of the following RELAY DRIVER products, is now
fully qualified. Upon expiration of the associated Final PCN(s), all devices will be supplied from the
CZ4 wafer fab in Roznov, Czech Republic.
No die design, process, or electrical parameters changes occurred as a result of this qualification.
Issue Date: 30-Jan-2012
Rev. 06-Jan-2010
Page 1 of 3
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16450B
RELIABILITY DATA SUMMARY:
Full qualification and reliability testing was performed on the NUD3160LT1G in the SOT23 pkg and
the NUD3160DMT1G in the SC74 package. The qualification vehicles were chosen to fully represent
the entire Relay Driver family.
Reliability Test Results:
Package: SOT23
NUD3160LT1G
Test:
Conditions:
HTRB
Tj=150C,80% Rated Voltage
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
Ta=85C RH=85%
bias=80% rated V or100V Max
TC+PC
Ta= -65 C to 150 C
RSH
Ta=260C, 10 sec dwell
HTSL
Ta=150C
HTGB
Ta=150C, 100% Gate V
IOL
Ta=25C, delta Tj=100C,
Ton=Toff= 0.5mS
Relay G8TB-1A-64
Interval:
1008 hrs
96 hrs
1008 hrs
1000 cyc
Results
0/168
0/84
0/84
1008 hrs
1008 hrs
0/84
0/30
0/84
0/84
1008 hrs
0/160
Package: SC74
NUD3160DMT1G
Test:
Conditions:
HTRB
Tj=150C,80% Rated Voltage
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
Ta=85C RH=85%
bias=80% rated V or100V Max
TC+PC
Ta= -65 C to 150 C
RSH
Ta=260C, 10 sec dwell
HTSL
Ta=150C
HTGB
Ta=150C, 100% Gate V
IOL
Ta=25C, delta Tj=100C,
Ton=Toff= 0.5mS
Relay G8N-1-DC12
Interval:
1008 hrs
96 hrs
1008 hrs
1000 cyc
Results
0/336
0/168
0/168
1008 hrs
1008 hrs
0/168
0/60
0/168
0/168
1008 hrs
0/328
ELECTRICAL CHARACTERISTIC SUMMARY:
Datasheet specifications and product electrical performance will remain unchanged.
Additional data is available upon request. Contact Blanca Kruse < [email protected] >
Issue Date: 30-Jan-2012
Rev. 06-Jan-2010
Page 2 of 3
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16450B
CHANGED PART IDENTIFICATION:
Affected products from ON Semiconductor with date code starting WW30 (2012) and greater will be
sourced from the CZ4 Wafer fab in Roznov, Czech Republic.
List of affected General Parts:
NUD3160DMT1G
NUD3160LT1G
SZNUD3160LT1G
SZNUD3160DMT1G
NUD3124DMT1G
NUD3124LT1G
SZNUD3124LT1G
SZNUD3124DMT1G
NUD3105DMT1G
NUD3105LT1G
NUD3112DMT1G
NUD3112LT1G
Issue Date: 30-Jan-2012
Rev. 06-Jan-2010
Page 3 of 3