FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16450B Generic Copy Issue Date: 30-Jan-2012 TITLE: Fabrication site transfer and Cu wire conversion qualification. PROPOSED FIRST SHIP DATE: 15-Jul-2012 AFFECTED CHANGE CATEGORY(S): ON Semiconductor Fab Site FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office ADDITIONAL RELIABILITY DATA: Contact your local ON Semiconductor Sales Office or <[email protected]> NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. FPCNs are issued at least 90 days prior to implementation of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>. DESCRIPTION AND PURPOSE: This FPCN is a follow up from IPCN #16450. ON Semiconductor is notifying customers that the Aizu to CZ4 transfer and Au wire to Cu wire conversion of the following RELAY DRIVER products, is now fully qualified. Upon expiration of the associated Final PCN(s), all devices will be supplied from the CZ4 wafer fab in Roznov, Czech Republic. No die design, process, or electrical parameters changes occurred as a result of this qualification. Issue Date: 30-Jan-2012 Rev. 06-Jan-2010 Page 1 of 3 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16450B RELIABILITY DATA SUMMARY: Full qualification and reliability testing was performed on the NUD3160LT1G in the SOT23 pkg and the NUD3160DMT1G in the SC74 package. The qualification vehicles were chosen to fully represent the entire Relay Driver family. Reliability Test Results: Package: SOT23 NUD3160LT1G Test: Conditions: HTRB Tj=150C,80% Rated Voltage Autoclave+PC Ta=121C RH=100% ~15 psig H3TRB+PC Ta=85C RH=85% bias=80% rated V or100V Max TC+PC Ta= -65 C to 150 C RSH Ta=260C, 10 sec dwell HTSL Ta=150C HTGB Ta=150C, 100% Gate V IOL Ta=25C, delta Tj=100C, Ton=Toff= 0.5mS Relay G8TB-1A-64 Interval: 1008 hrs 96 hrs 1008 hrs 1000 cyc Results 0/168 0/84 0/84 1008 hrs 1008 hrs 0/84 0/30 0/84 0/84 1008 hrs 0/160 Package: SC74 NUD3160DMT1G Test: Conditions: HTRB Tj=150C,80% Rated Voltage Autoclave+PC Ta=121C RH=100% ~15 psig H3TRB+PC Ta=85C RH=85% bias=80% rated V or100V Max TC+PC Ta= -65 C to 150 C RSH Ta=260C, 10 sec dwell HTSL Ta=150C HTGB Ta=150C, 100% Gate V IOL Ta=25C, delta Tj=100C, Ton=Toff= 0.5mS Relay G8N-1-DC12 Interval: 1008 hrs 96 hrs 1008 hrs 1000 cyc Results 0/336 0/168 0/168 1008 hrs 1008 hrs 0/168 0/60 0/168 0/168 1008 hrs 0/328 ELECTRICAL CHARACTERISTIC SUMMARY: Datasheet specifications and product electrical performance will remain unchanged. Additional data is available upon request. Contact Blanca Kruse < [email protected] > Issue Date: 30-Jan-2012 Rev. 06-Jan-2010 Page 2 of 3 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16450B CHANGED PART IDENTIFICATION: Affected products from ON Semiconductor with date code starting WW30 (2012) and greater will be sourced from the CZ4 Wafer fab in Roznov, Czech Republic. List of affected General Parts: NUD3160DMT1G NUD3160LT1G SZNUD3160LT1G SZNUD3160DMT1G NUD3124DMT1G NUD3124LT1G SZNUD3124LT1G SZNUD3124DMT1G NUD3105DMT1G NUD3105LT1G NUD3112DMT1G NUD3112LT1G Issue Date: 30-Jan-2012 Rev. 06-Jan-2010 Page 3 of 3