DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBS3904 NPN general purpose transistor Product specification Supersedes data of 1997 May 20 1999 Apr 22 Philips Semiconductors Product specification NPN general purpose transistor PMBS3904 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification, e.g. telephony and professional communication equipment. DESCRIPTION handbook, halfpage 3 3 NPN transistor in a plastic SOT23 package. PNP complement: PMBS3906. 1 MARKING 1 MARKING CODE(1) TYPE NUMBER ∗O4 PMBS3904 2 2 Top view MAM255 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current Ptot total power dissipation Tstg − 200 mA − 250 mW storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C 1999 Apr 22 Tamb ≤ 25 °C 2 Philips Semiconductors Product specification NPN general purpose transistor PMBS3904 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 30 V − 50 nA emitter cut-off current IC = 0; VEB = 5 V − 50 nA DC current gain VCE = 1 V; note 1; (see Fig.2) 40 − ICBO collector cut-off current IEBO hFE IC = 0.1 mA IC = 1 mA 70 − IC = 10 mA 100 300 IC = 50 mA 60 − IC = 100 mA 30 − collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 200 mV IC = 50 mA; IB = 5 mA − 300 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA 650 850 mV IC = 50 mA; IB = 5 mA − 950 mV Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 4 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 12 pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 180 − MHz F noise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz 5 dB VCEsat − Switching times (between 10% and 90% levels); (see Fig.3) − 110 ns − 50 ns − 60 ns turn-off time − 1200 ns storage time − 1000 ns fall time − 200 ns ton turn-on time td delay time tr rise time toff ts tf ICon = 10 mA; IBon = 1 mA; IBoff = − 1 mA; VCC = 3 V; VBB = −1.9 V Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Apr 22 3 Philips Semiconductors Product specification NPN general purpose transistor PMBS3904 MBH723 250 handbook, full pagewidth hFE 200 VCE = 5 V 150 100 50 0 10−2 10−1 1 102 10 Fig.2 DC current gain; typical values. VBB ndbook, full pagewidth VCC RB RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. Oscilloscope: input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 1999 Apr 22 4 oscilloscope IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistor PMBS3904 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Apr 22 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification NPN general purpose transistor PMBS3904 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 22 6 Philips Semiconductors Product specification NPN general purpose transistor PMBS3904 NOTES 1999 Apr 22 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/04/pp8 Date of release: 1999 Apr 22 Document order number: 9397 750 05714