PHILIPS ED1502D

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
ED1502
NPN general purpose transistor
Product specification
Supersedes data of 1997 May 01
1999 Apr 27
Philips Semiconductors
Product specification
NPN general purpose transistor
ED1502
FEATURES
PINNING
• Low current (max. 25 mA)
PIN
DESCRIPTION
• Low voltage (max. 20 V)
1
emitter
• High gain.
2
base
3
collector
APPLICATIONS
• General purpose switching and amplification.
handbook, halfpage1
DESCRIPTION
3
2
3
2
NPN transistor in a plastic TO-92; SOT54 package.
1
MAM182
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
20
V
VEBO
emitter-base voltage
open collector
−
4
V
IC
collector current (DC)
−
25
mA
ICM
peak collector current
−
25
mA
IBM
peak base current
−
25
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
Tamb ≤ 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Refer to TO-92; SOT54 standard mounting conditions.
1999 Apr 27
2
Philips Semiconductors
Product specification
NPN general purpose transistor
ED1502
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
250
K/W
Note
1. Refer to TO-92; SOT54 standard mounting conditions.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 40 V
MIN.
−
TYP.
−
MAX.
10
UNIT
µA
ICBO
collector cut-off current
IE = 0; VCB = 20 V; Tj = 150 °C
−
−
5
µA
IEBO
emitter cut-off current
IC = 0; VEB = 4 V
−
−
10
µA
hFE
DC current gain
IC = 7 mA; VCE = 10 V
ED1502B
48
−
75
ED1502C
66
−
100
ED1502D
84
−
127
ED1502E
105
−
210
VBE
base-emitter voltage
IC = 7 mA; VCE = 10 V; note 1
−
−
925
mV
Cre
feedback capacitance
IC = ic = 0; VCB = 10 V; f = 1 MHz
−
0.5
−
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
361
−
825
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 27
3
Philips Semiconductors
Product specification
NPN general purpose transistor
ED1502
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
1999 Apr 27
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
4
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN general purpose transistor
ED1502
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 27
5
Philips Semiconductors
Product specification
NPN general purpose transistor
ED1502
NOTES
1999 Apr 27
6
Philips Semiconductors
Product specification
NPN general purpose transistor
ED1502
NOTES
1999 Apr 27
7
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/02/pp8
Date of release: 1999 Apr 27
Document order number:
9397 750 05785