DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 MPSA42; MPSA43 NPN high-voltage transistors Product data sheet Supersedes data of 1999 Apr 12 2004 Oct 11 NXP Semiconductors Product data sheet NPN high-voltage transistors MPSA42; MPSA43 FEATURES PINNING • Low current (max. 100 mA) PIN • High voltage (max. 300 V). 1 collector 2 base 3 emitter APPLICATIONS DESCRIPTION • Video • Telephony • Professional communication equipment. handbook, halfpage1 1 2 3 2 DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complement: MPSA92. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME MPSA42 SC-43A DESCRIPTION VERSION plastic single-ended leaded (through hole) package; 3 leads SOT54 MPSA43 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MPSA43 collector-emitter voltage MAX. UNIT open emitter MPSA42 VCEO MIN. − 300 V − 200 V − 300 V − 200 V − 6 V open base MPSA42 MPSA43 VEBO emitter-base voltage IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 100 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C 2004 Oct 11 open collector Tamb ≤ 25 °C 2 NXP Semiconductors Product data sheet NPN high-voltage transistors MPSA42; MPSA43 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS VALUE UNIT note 1 250 K/W CONDITIONS MIN. thermal resistance from junction to ambient Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER MAX. UNIT collector-base cut-off current MPSA42 VCB = 200 V; IE = 0 A − 100 nA MPSA43 VCB = 160 V; IE = 0 A − 100 nA MPSA42 VEB = 6 V; IC = 0 A − 100 nA MPSA43 VEB = 4 V; IC = 0 A − 100 nA IC = 1 mA 25 − IC = 10 mA 40 − IC = 30 mA emitter-base cut-off current DC current gain VCE = 10 V; note 1 40 − VCEsat collector-emitter saturation voltage IC = 20 mA; IB = 2 mA; note 1 − 500 mV VBEsat base-emitter saturation voltage IC = 20 mA; IB = 2 mA; note 1 − 900 mV Cc collector capacitance VCB = 20 V; IE = ie = 0 A; f = 1 MHz MPSA42 − 3 pF MPSA43 − 4 pF 50 − MHz fT transition frequency VCE = 20 V; IC = 10 mA; f = 100 MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Oct 11 3 NXP Semiconductors Product data sheet NPN high-voltage transistors MPSA42; MPSA43 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2004 Oct 11 REFERENCES IEC JEDEC JEITA TO-92 SC-43A 4 EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 NXP Semiconductors Product data sheet NPN high-voltage transistors MPSA42; MPSA43 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2004 Oct 11 5 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp6 Date of release: 2004 Oct 11 Document order number: 9397 750 13611