PHILIPS MPSA42

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
MPSA42; MPSA43
NPN high-voltage transistors
Product data sheet
Supersedes data of 1999 Apr 12
2004 Oct 11
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
MPSA42; MPSA43
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• High voltage (max. 300 V).
1
collector
2
base
3
emitter
APPLICATIONS
DESCRIPTION
• Video
• Telephony
• Professional communication equipment.
handbook, halfpage1
1
2
3
2
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complement: MPSA92.
3
MAM279
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
MPSA42
SC-43A
DESCRIPTION
VERSION
plastic single-ended leaded (through hole) package; 3 leads
SOT54
MPSA43
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MPSA43
collector-emitter voltage
MAX.
UNIT
open emitter
MPSA42
VCEO
MIN.
−
300
V
−
200
V
−
300
V
−
200
V
−
6
V
open base
MPSA42
MPSA43
VEBO
emitter-base voltage
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
2004 Oct 11
open collector
Tamb ≤ 25 °C
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
MPSA42; MPSA43
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
VALUE
UNIT
note 1
250
K/W
CONDITIONS
MIN.
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
MAX.
UNIT
collector-base cut-off current
MPSA42
VCB = 200 V; IE = 0 A
−
100
nA
MPSA43
VCB = 160 V; IE = 0 A
−
100
nA
MPSA42
VEB = 6 V; IC = 0 A
−
100
nA
MPSA43
VEB = 4 V; IC = 0 A
−
100
nA
IC = 1 mA
25
−
IC = 10 mA
40
−
IC = 30 mA
emitter-base cut-off current
DC current gain
VCE = 10 V; note 1
40
−
VCEsat
collector-emitter saturation voltage
IC = 20 mA; IB = 2 mA; note 1
−
500
mV
VBEsat
base-emitter saturation voltage
IC = 20 mA; IB = 2 mA; note 1
−
900
mV
Cc
collector capacitance
VCB = 20 V; IE = ie = 0 A; f = 1 MHz
MPSA42
−
3
pF
MPSA43
−
4
pF
50
−
MHz
fT
transition frequency
VCE = 20 V; IC = 10 mA; f = 100 MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Oct 11
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
MPSA42; MPSA43
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2004 Oct 11
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
4
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
MPSA42; MPSA43
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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General ⎯ Information in this document is believed to be
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2004 Oct 11
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/05/pp6
Date of release: 2004 Oct 11
Document order number: 9397 750 13611