PHILIPS BSP52

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
BSP50; BSP51; BSP52
NPN Darlington transistors
Product data sheet
Supersedes data of 1997 Apr 22
1999 Apr 23
NXP Semiconductors
Product data sheet
NPN Darlington transistors
BSP50; BSP51; BSP52
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 80 V)
1
• Integrated diode and resistor.
DESCRIPTION
base
2,4
3
collector
emitter
APPLICATIONS
• Industrial high gain amplification.
4
2, 4
DESCRIPTION
1
NPN Darlington transistor in a SOT223 plastic package.
PNP complements: BSP60, BSP61 and BSP62.
1
2
Top view
3
3
MAM265
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCES
PARAMETER
CONDITIONS
collector-base voltage
MIN.
MAX.
UNIT
open emitter
BSP50
−
60
V
BSP51
−
80
V
BSP52
−
90
V
BSP50
−
45
V
BSP51
−
60
V
BSP52
−
80
V
collector-emitter voltage
VBE = 0
VEBO
emitter-base voltage
−
5
V
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
2
A
IB
base current (DC)
−
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1 −
1.25
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
open collector
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
1999 Apr 23
2
NXP Semiconductors
Product data sheet
NPN Darlington transistors
BSP50; BSP51; BSP52
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-s
thermal resistance from junction to solder point
VALUE
UNIT
96
K/W
17
K/W
note 1
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook“.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICES
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
collector cut-off current
BSP50
VBE = 0; VCE = 45 V
−
−
50
nA
BSP51
VBE = 0; VCE = 60 V
−
−
50
nA
BSP52
VBE = 0; VCE = 80 V
−
−
50
nA
−
−
50
nA
IC = 150 mA
1 000
−
−
IC = 500 mA
2 000
−
−
IC = 500 mA; IB = 0.5 mA
−
−
1.3
V
IC = 500 mA; IB = 0.5 mA;
Tj = 150 °C
−
−
1.3
V
−
−
1.9
V
200
−
MHz
−
500
−
ns
−
1 300
−
ns
IEBO
emitter cut-off current
IC = 0; VEB = 4 V
hFE
DC current gain
VCE = 10 V; note 1; see Fig.2
VCEsat
MIN.
collector-emitter saturation
voltage
VBEsat
base-emitter saturation
voltage
IC = 500 mA; IB = 0.5 mA
fT
transition frequency
IC = 500 mA; VCE = 5 V; f = 100 MHz −
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
toff
turn-off time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
1999 Apr 23
3
NXP Semiconductors
Product data sheet
NPN Darlington transistors
BSP50; BSP51; BSP52
MGD838
5000
handbook, full pagewidth
hFE
4000
3000
2000
1000
0
10−1
102
10
1
VCE = 10 V.
Fig.2 DC current gain; typical values.
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MLB826
Vi = 10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = −1.8 V; VCC = 10.7 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
1999 Apr 23
4
oscilloscope
IC (mA)
103
NXP Semiconductors
Product data sheet
NPN Darlington transistors
BSP50; BSP51; BSP52
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
1999 Apr 23
REFERENCES
IEC
JEDEC
EIAJ
SC-73
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
NXP Semiconductors
Product data sheet
NPN Darlington transistors
BSP50; BSP51; BSP52
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 23
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
115002/00/03/pp7
Date of release: 1999 Apr 23
Document order number: 9397 750 05809