Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1291B HEXFET® POWER MOSFET IRFY430CM N-CHANNEL Product Summary 500 Volt, 1.5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. Part Number BVDSS RDS(on) ID IRFY430CM 500V 1.5Ω 4.5A Features n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings Parameter ID @ V GS=10V, TC = 25°C ID @ VGS=10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ Tstg IRFY430CM Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalance Energy Avalance Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight To Order 4.5 2.8 18 75 0.6 ±20 280 4.5 7.5 3.5 -55 to 150 Units A W W/K V mJ A mJ V/ns °C 300 (0.063 in (1.6mm) from case for 10 sec) 4.3 (typical) °C g Previous Datasheet Index Next Data Sheet IRFY430CM Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min. Drain-to-Source Breakdown Voltage 500 — — — 0.78 — — — 2.0 1.5 — — — — — — — — 1.5 1.8 4.0 — 25 250 — — 19.8 2.2 5.5 — — — — — — — — — — — — — — 8.7 100 -100 29.5 4.6 19.7 35 30 55 30 — ∆BV DSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ. Max. Units IGSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance LS Internal Source Inductance — 8.7 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 6.0 135 65 — — — V Test Conditions VGS = 0V, ID = 1.0mA V/°C Reference to 25°C, ID = 1.0mA Ω VGS = 10V, ID = 2.8A VGS = 10V, ID = 4.5A V VDS = VGS, ID = 250µA S ( ) VDS ≥ 15V, IDS = 2.8A VDS = 0.8 x max. rating,VGS = 0V µA VDS = 0.8 x max. rating VGS = 0V, TJ = 25°C VGS = 20V nA VGS = -20V VGS = 10V, ID = 4.5A nC VDS = Max. Rating x 0.5 see figures 5 and 13 VDD = 250V, ID = 4.5A, RG = 7.5, VGS = 10V ns Ω BVDSS see figure 10 nH pF Measured from the drain Modified MOSFET symbol lead, 6mm (0.25 in.) from showing the internal package to center of die. inductances. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. VGS = 0v, V DS = 25V f = 1.0MHz. see figure 5 Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) — — — — 4.5 18 A VSD t rr Q RR t on Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — — — 1.4 900 7.0 V ns µC Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = 4.5A, V GS = 0V Tj = 25°C, IF = 4.5A, di/dt ≤ 100 A/µs VDD ≤ 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case RthJA Junction-to-Ambient RthCS Case-to-Sink Min. Typ. Max. Units — — — — — 0.21 1.67 80 K/W — To Order Test Conditions Typical socket mount Mounting surface flat, smooth Previous Datasheet Index Next Data Sheet IRFY430CM Device Fig. 1 — Typical Output Characteristics TC = 25°C Fig. 2 — Typical Output Characteristics TC = 150°C I D = 4.5A Fig. 3 — Typical Transfer Characteristics Fig. 4 — Normalized On-Resistance Vs. Temperature ID = 4.5A Fig. 5 — Typical Capacitance Vs. Drain-to-Source Voltage Fig. 6 — Typical Gate Charge Vs. Gate-to-Source Voltage To Order Previous Datasheet Index Next Data Sheet IRFY430CM Device 100 ID , Drain Current (A) OPERAT ION IN THIS AREA LIMITED BY R DS(on) 10 10µs 100µs 1 0.1 1ms 10ms TC = 25°C TJ = 150°C Single Pulse 10 A 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 7 — Typical Source-to-Drain Diode Forward Voltage Fig. 8 — Maximum Safe Operating Area ID, Drain Current (Amps) 5 4 3 2 1 A 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig. 9 — Maximum Drain Current Vs. Case Temperature Fig. 10a — Switching Time Test Circuit Fig. 10b — Switching Time Waveforms To Order Previous Datasheet Index Next Data Sheet IRFY430CM Device Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 t1 t2 0.02 0.01 Notes: 1. Duty factor D = t / t 1 2 SIN GLE PU LSE (THERMAL RESPONSE) 2. Peak TJ = PDMx Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 A 1 t 1 , Rectangular Pulse Duration (sec) Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration tp D.U.T RG + - VDD I AS A 0.01Ω tp I AS Fig. 12a — Unclamped Inductive Test Circuit E AS , Single Pulse Avalanche Energy (mJ) V (BR)DSS DRIVER L VDS Fig. 12b — Unclamped Inductive Waveforms 300 250 200 150 100 50 0 I D = 4.5A V DD = 50V 25 50 A 75 100 125 150 Starting TJ , Junction Temperature (°C) Fig. 12c — Max. Avalanche Energy vs. Current Fig. 13a — Gate Charge Test Circuit To Order Previous Datasheet Index Next Data Sheet Notes: IRFY430CM Device Repetitive Rating; Pulse width limited by maximum junction temperature (see figure 11). @ VDD = 50V, Starting TJ = 25°C, EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)] Peak IL = 4.5A, V GS = 10V, 25 ≤ RG ≤ 200Ω (figure 12) I SD ≤ 4.5A, di/dt ≤ 75A/µs, VDD ≤ BVDSS, TJ ≤ 150°C Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W W/K = W/°C Fig. 13b — Basic Gate Charge Waveform Case Outline and Dimensions — TO-257AA Pin 1 - Drain Pin 2 - Source Pin 3 - Gate 3 1 2 TO-257AA NON-STANDARD PIN CONFIGURATION Pin 1 - Gate Pin 2 - Drain Pin 3 - Source Order Part Type IRFY430C NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4. Outline conforms to JEDEC outline TO-257AA CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 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