Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1388A IRFM260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ® TRANSISTOR N-CHANNEL Ω , HEXFET 200Volt, 0.060Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required. Part Number BV DSS RDS(on) ID IRFM260 200V 0.060Ω 35A* Features: n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelet HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Pre-Radiation Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG IRFM260 Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range 35* 28 180 250 2.0 ±20 700 35 25 4.3 To Order A W W/K V mJ A mJ V/ns -55 to 150 oC 300(0.063 in.(1.6mm) from case for 10s) 9.3 (typical) Lead Temperature Weight Units g Previous Datasheet Index Next Data Sheet IRFM260 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage 200 — — V VGS =0 V, ID = 1.0mA — 0.24 — V/°C Reference to 25°C, ID = 1.0mA — — 2.0 22 — — — — — — — — 0.060 0.068 4.0 — 25 250 ∆BVDSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — 8.7 100 -100 230 40 110 29 120 110 92 — LS Internal Source Inductance — 8.7 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5100 1100 280 — — — Ω V S( ) Ω BVDSS µA nA nC ns nH pF Test Conditions VGS = 10V, ID = 28A VGS = 10V, ID = 35A VDS = VGS, ID = 250µA VDS > 15V, IDS = 28A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20 V VGS = -20V VGS = 10V, ID = 35A VDS = Max Rating x 0.5 VDD = 100V, ID = 35A, RG = 2.35Ω Measured from drain lead, 6mm (0.25 in) from package to center of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad. Modified MOSFETsymbol showing the internal inductances. VGS = 0V, VDS = 25 V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) — — — — 35* 180 A VSD trr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — 1.8 420 4.9 V ns µC ton Forward Turn-On Time Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = 35A, VGS = 0V Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs VDD ≤ 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max — — — — 0.50 0.21 — — 48 To Order Units Test Conditions K/W Mounting surface flat, smooth, and greased Typical socket mount Previous Datasheet Index Next Data Sheet IRFM260 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V 100 10 4.5 V 2 0µ s PU LSE W ID TH TC = 2 5°C 1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP I , D ra in -to -S o u rc e C u rre n t (A ) D I , D ra in -to -S o u rce C u rre n t (A ) D TOP 1 10 A 100 4.5 V 10 20µ s PU L SE W ID TH T J = 1 50 °C 1 100 0.1 1 V D S , D rain-to-S ource V oltage (V ) Fig 2. Typical Output Characteristics, T J = 150oC 2.5 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D , D r ain- to-S ourc e C urre nt (A ) 1000 100 T J = 1 5 0 °C TJ = 2 5 °C 10 VD S = 5 0 V 2 0 µ s PU L SE W ID TH 4 5 6 7 8 9 A 100 V D S , Drain-to-Source V oltage (V) Fig 1. Typical Output Characteristics, TJ = 25oC 1 10 10 A V G S , Ga te-to-S o urce V oltage (V ) I D = 46 A 2.0 1.5 1.0 0.5 V G S = 10 V 0.0 -60 -40 -20 0 20 40 60 80 T J , Junction T emperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature To Order A 100 120 140 160 Previous Datasheet Index Next Data Sheet IRFM260 20 V GS C iss C rss C oss 10000 = = = = 0V , f = 1M H z C gs + C gd , C ds S H O R T E D C gd C d s + C gd V G S , G a te -to -S o u rc e V o lta g e (V ) 12000 V DS = 16 0V V DS = 10 0V V DS = 40 V 16 C is s C , C a p a c ita n c e (p F ) I D = 35 A 8000 12 C os s 6000 4000 C rs s 2000 0 10 4 0 100 50 100 150 200 A 250 Q G , T otal G ate Charge (nC) V D S , Drain-to-Source V oltage (V ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n) I D , D ra in C u rre n t (A ) I S D , R e v e rse D ra in C u rre n t (A ) FO R TEST C IRC U IT SEE FIG UR E 13 0 A 1 8 100 TJ = 15 0°C TJ = 2 5°C 10 VG S = 0 V 1 0.0 1.0 2.0 3.0 A 4.0 10µ s 100 100µ s 1m s 10 10 ms T C = 25 °C T J = 15 0°C S ing le Pulse 1 1 A 10 100 1000 V D S , Drain-to-Source Voltage (V) V S D , S ource-to-Drain Voltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area To Order Previous Datasheet Index Next Data Sheet IRFM260 RD VDS VGS 50 LIM ITE D B Y P ACK AG E D.U.T. RG + -VDD I D , D ra in C u rre n t (A m p s) 40 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 90% 10 10% VGS A 0 25 50 75 100 125 150 TC , C ase T emperature (°C) td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms T her m al R e spon se ( Z th J C ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 PD M t SING LE P ULSE (T HERMA L RES PO NSE) t2 N otes : 1 . D uty fac tor D = t 0.001 0.00001 1 1 / t 2 2. P eak TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 t 1 , Re ctang ular P ulse D uration (sec ) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case To Order A 10 Previous Datasheet Index Next Data Sheet IRFM260 15 V L VDS D R IV E R D .U .T RG + - VDD IA S 2 0V 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit A E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) 1600 V (BR )D SS TO P B OTTO M ID 16 A 2 2A 35 A 1200 800 400 0 A 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF QG .3µF 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform To Order Previous Datasheet Index Next Data Sheet IRFM260 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS To Order ISD * Previous Datasheet Index Next Data Sheet IRFM260 Case Outline and Dimensions TO-254AA .1 2 ( .00 5 ) .1 2 ( .0 05 ) 1 3 .8 4 ( .54 5 ) 1 3 .5 9 ( .53 5 ) 3 .7 8 ( .14 9 ) 3 .5 3 ( .13 9 ) -A - -B6.6 0 ( .26 0 ) 6.3 2 ( .24 9 ) -B - 13 .84 ( .5 4 5 ) 13 .59 ( .5 3 5 ) 3 .78 ( .1 49 ) 3 .53 ( .1 39 ) - A- 6.6 0 ( .26 0 ) 6.3 2 ( .24 9 ) 1 .27 ( .0 50 ) 1 .02 ( .0 40 ) 1 .27 ( .05 0 ) 1 .02 ( .04 0 ) 3 1.4 0 ( 1.2 35 ) 3 0.3 9 ( 1.1 99 ) 2 1.9 8 ( .86 5 ) 2 0.9 5 ( .82 5 ) 20 .32 ( .8 00 ) 20 .07 ( .7 90 ) 1 7.40 ( .6 85 ) 1 6.89 ( .6 65 ) 1 2 1 3.8 4 ( .5 4 5 ) 1 3.5 9 ( .5 3 5 ) 3 2 0 .3 2 ( .8 00 ) 2 0 .0 7 ( .7 90 ) 1 7 .40 ( .6 85 ) 1 6 .89 ( .6 65 ) L EGE ND 1 1 - C OL L EC TOR W 2 - EMITTER 2 -C - 3X 3 .8 1 ( .1 50 ) 2X 3X 1 .14 ( .0 45 ) 0 .89 ( .0 35 ) .50 ( .0 2 0 ) .25 ( .0 1 0 ) 1 .5 2 ( .0 60 ) R M IN . 3 .2 3.1 3 - GATE -C - 3 .81 ( .1 50 ) 2X 1 3.8 4 ( .54 5 ) 1 3.5 9 ( .53 5 ) 3 3.8 1 ( .15 0 ) M C A M B M C N OTE S: 1 . D IME NS ION IN G & TOLE RA NC IN G PE R AN SI Y 14 .5M, 1 98 2. 1 .14 ( .0 45 ) 0 .89 ( .0 35 ) .5 0 ( .02 0 ) .2 5 ( .01 0 ) N OTE S : 1. DIME NS ION ING & TOL ER AN C IN G PE R AN S I Y1 4 .5 M-1 9 82 . 2. AL L D IM EN SIONS AR E SH OW N IN MIL LIMETE R S ( IN C HE S ). 3. LE AD FOR M IS A VA IL ABL E IN E ITH ER OR IEN TA TION : 3.1 EXAM PL E : IR FM4 50 0 3.2 EXAM PL E : IR FM4 50 U M C A M B M C 4 .01 ( .15 8 ) 3 .61 ( .14 2 ) 4 .8 3 ( .1 90 ) 3 .8 1 ( .1 50 ) L EGE ND 1 - C OLL EC TOR 2 - EM ITTE R 3 - GATE 2 . AL L D IM EN SIONS A RE S HOW N IN MILL IMETER S ( IN C HE S ). Conforms to JEDEC Outline TO-254AA Dimensions in Millimeters and ( Inches ) CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations perfomed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. Notes: Repetitive Rating; Pulse width limited by @ VDD = 50 V, Starting TJ = 25°C, maximum junction temperature. EAS = [0.5 * L * (IL2) ] Refer to current HEXFET reliability report. Peak IL = 35A, VGS =10 V, 25 ≤ RG ≤ 200Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W ISD ≤ 35A, di/dt ≤ 130 A/µs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 2.35Ω * ID current limited by pin diamete ( Die Current = 46A ) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 7/96 To Order