Bulletin PD-20637 12/01 70CRU04 Ultrafast Rectifier Features • • • • • • • trr = 38ns IF(AV) = 70Amp @TC = 116°C VR = 400V Two Common-Cathode Diodes Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Drop Low Leakage Current Optimized for Power Conversion: Welding and Industrial SMPS Applications Up to 175°C Operating Junction Temperature Description/ Applications The 70CRU04 integrates two state-of-the-art International Rectifier’s Ultrafast recovery rectifiers in the commoncathode configuration. The planar structure of the diodes, and the platinum doping life-time control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DCDC converters. Their extremely optimized stored charge and low recovery current reduce both over-dissipation in the switching elements (and snubbers) and EMI/RFI. Absolute Maximum Ratings Parameters Max Units 400 V Per Diode 35 A Per Diode 300 VR Cathode to Anode Voltage IF(AV) Continuous Forward Current TC = 116°C IFSM Single Pulse Forward Current TC = 25°C PD Maximum Power Dissipation TC = 100°C Per Module TJ, TSTG Operating Junction and Storage Temperatures 47 W - 55 to 175 °C Case Styles 70CRU04 Base Common Cathode 2 1 Anode 1 TO-218 www.irf.com 3 2 Anode 2 Common Cathode 1 70CRU04 Bulletin PD-20637 12/01 Electrical Characteristics per Diode @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions VBR, Vr Breakdown Voltage, Blocking Voltage 400 VF Forward Voltage IR Reverse Leakage Current CT Junction Capacitance - - V IR = 100µA - 1.11 1.32 V IF = 35A - 0.98 1.14 V IF = 35A, TJ = 125°C - 0.92 1.05 V IF = 35A, TJ = 175°C VR = VR Rated - - 100 µA - - 2 mA TJ = 150°C, VR = VR Rated - 70 - pF VR = 400V Dynamic Recovery Characteristics per Diode @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions trr Reverse Recovery Time - 32 38 ns TJ = 25°C trr Reverse Recovery Time - 72 - ns TJ = 25°C - 130 - - 7.7 - - 16.5 - - 0.28 - - 1.08 - IRRM Qrr Peak Recovery Current Reverse Recovery Charge IF = 1A VR = 30V diF /dt = 200A/µs TJ = 125°C A IF = 35A VR = 200V diF /dt = 200A/µs TJ = 25°C TJ = 125°C µC TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameters Min Typ Max Units K/W RthJC Thermal Resistance, Junction to Case Per Diode - 0.8 1.6 RthJC Thermal Resistance, Junction to Case Both Diodes - 0.4 0.8 RthCS (1) Thermal Resistance, Case to Heatsink - 0.2 - Wt Weight - 4 - T Mounting Torque g - 0.13 - (oz) 1.2 - 2.4 N*m 10 - 20 lbf.in !(1) Mounting Surface, Flat, Smooth and Greased 2 www.irf.com 70CRU04 Bulletin PD-20637 12/01 1000 1000 Reverse Current - I R (µA) 100 150˚C 10 125˚C 1 25˚C 0.1 0.01 0.001 50 100 150 200 250 300 350 400 Reverse Voltage - VR (V) Tj = 175˚C Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage Tj = 125˚C 1000 Tj = 25˚C Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) Tj = 175˚C 100 10 Tj = 25˚C 100 10 1 0 0.5 1 1.5 2 2.5 1 3 10 100 1000 Reverse Voltage - VR (V) Forward Voltage Drop - VFM (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode) Thermal Impedance Z thJC (°C/W) 10 1 PDM t1 0.1 Single Pulse (Thermal Resistance) t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.0001 0.001 0.01 0.1 t1, Rectangular Pulse Duration (Seconds) 1 10 Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Diode) www.irf.com 3 70CRU04 180 40 170 35 Average Power Loss ( Watts ) Allowable Case Temperature (°C) Bulletin PD-20637 12/01 160 150 DC 140 130 Square wave (D = 0.50) 120 Rated Vr applied 110 see note (3) 100 0 5 30 25 15 10 5 0 Average Forward Current - I F(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current 140 10 15 20 25 30 35 Fig. 6 - Forward Power Loss Characteristics 2500 If = 35A Vrr = 200V 2000 120 Tj = 125˚C 110 Tj = 125˚C 1500 Qrr ( nC ) trr ( ns ) 5 Average Forward Current - I F(AV) (A) If = 35A Vrr = 200V 130 100 90 80 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 20 0 10 15 20 25 30 35 40 150 RMS Limit 1000 Tj = 25˚C Tj = 25˚C 70 500 60 50 100 1000 di F /dt (A/µs ) Fig. 7 - Typical Reverse Recovery vs. di F /dt 0 100 1000 di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR 4 www.irf.com 70CRU04 Bulletin PD-20637 12/01 Outline Table Dimensions in inches (and milimetres) Marking Information ASSEMBLY LOT CODE IR PART NUMBER 70CRU04 1043 INTERNATIONAL RECTIFIER LOGO 0136 DATE CODE (YYWW) YY = YEAR WW = WEEK www.irf.com 5 70CRU04 Bulletin PD-20637 12/01 Ordering Information Table Device Code 70 C R U 04 1 2 3 4 5 1 - Current Rating 2 - Common Cathode 3 - TO-218 4 - Ultrafast Recovery 5 - Voltage Rating (70 = 70A) (04 = 400V) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/01 6 www.irf.com