Product Overview 1HP04CH: Small Signal MOSFET, -100V, 18Ω , -170mA, Single P-Channel For complete documentation, see the data sheet Product Description This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • • • • • Benefits Pb-Free, Halogen Free and RoHS compliance High Voltage (100V) High Speed Switching and Low Loss 4V drive ESD Diode-Protected Gate • Environmental consideration • Usuful for LiB circuit of 48V for storage • Correspond to required characteristic of motor circuit Applications End Products • Lithium-ion Battery Charging and Discharging Cell Balance • Lithium-ion Battery Charger Part Electrical Specifications Product 1HP04CH-TL-W Compliance Pb-free Halide free Status Active Cha nne l Pol arit y Con V(BR figu )DSS rati Min (V) on PSin Cha gle nne l 100 VGS Ma x (V) VGS ID Ma x (A) PD Ma x (W) 20 -2.6 0.1 7 0.6 (th) Ma x (V) rDS( rDS( rDS( on) on) on) 210 00 180 00 Ma x@ VGS = 2.5 V (mΩ) Ma x@ VGS = 4.5 V (mΩ) For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Ma x@ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC ) Qg Typ @ VGS = 10 V (nC ) 0.9 Qgd Typ @ VGS = 4.5 V (nC ) Qrr Typ (nC ) Ciss Coss Crss Pac Typ Typ Typ kag (pF) (pF) (pF) e Typ e 14 2.8 0.9 CP H-3