Product Overview

Product Overview
1HP04CH: Small Signal MOSFET, -100V, 18Ω , -170mA, Single P-Channel
For complete documentation, see the data sheet
Product Description
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate
charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features
•
•
•
•
•
Benefits
Pb-Free, Halogen Free and RoHS compliance
High Voltage (100V)
High Speed Switching and Low Loss
4V drive
ESD Diode-Protected Gate
• Environmental consideration
• Usuful for LiB circuit of 48V for storage
• Correspond to required characteristic of motor circuit
Applications
End Products
• Lithium-ion Battery Charging and Discharging Cell Balance
• Lithium-ion Battery Charger
Part Electrical Specifications
Product
1HP04CH-TL-W
Compliance
Pb-free
Halide free
Status
Active
Cha
nne
l
Pol
arit
y
Con V(BR
figu )DSS
rati Min
(V)
on
PSin
Cha gle
nne
l
100
VGS
Ma
x
(V)
VGS
ID
Ma
x
(A)
PD
Ma
x
(W)
20
-2.6 0.1
7
0.6
(th)
Ma
x
(V)
rDS(
rDS(
rDS(
on)
on)
on)
210
00
180
00
Ma
x@
VGS
=
2.5
V
(mΩ)
Ma
x@
VGS
=
4.5
V
(mΩ)
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Ma
x@
VGS
=
10
V
(mΩ)
Qg
Typ
@
VGS
=
4.5
V
(nC
)
Qg
Typ
@
VGS
=
10
V
(nC
)
0.9
Qgd
Typ
@
VGS
=
4.5
V
(nC
)
Qrr
Typ
(nC
)
Ciss Coss Crss Pac
Typ Typ Typ kag
(pF) (pF) (pF) e
Typ
e
14
2.8
0.9
CP
H-3