Product Overview CPH3356: Power MOSFET, -20V, 137mΩ , -2.5A, Single P-Channel For complete documentation, see the data sheet Product Description This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements. Features • • • • Benefits 1.8V Drive Low On-Resistance ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance • • • • Applications Drive at low voltage Minimize conduction loss ESD resistance Environment friendliness End Products • Load Switch • White goods, Game, Mobile Scanner, Recorder, Ink Jet Printer • Motor Driver Part Electrical Specifications Product CPH3356-TL-W Compliance Pb-free Halide free Status Active Cha nne l Pol arit y Con V(BR figu )DSS rati Min (V) on PSin Cha gle nne l -20 VGS Ma x (V) VGS 10 -1.4 -2.5 1 (th) Ma x (V) ID Ma x (A) PD Ma x (W) rDS( rDS( rDS( on) on) on) 203 137 Ma x@ VGS = 2.5 V (mΩ) Ma x@ VGS = 4.5 V (mΩ) For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Ma x@ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC ) 3.3 Qg Typ @ VGS = 10 V (nC ) Qgd Typ @ VGS = 4.5 V (nC ) 0.7 2 Qrr Typ (nC ) Ciss Coss Crss Pac Typ Typ Typ kag (pF) (pF) (pF) e Typ e 250 60 45 CP H-3