SEE_Test_Report_RH3080.pdf

Heavy-Ion Test Results of the Radiation-Hardened Adjustable 0.9A
Single Resistor Low Dropout Regulator RH3080MK
September 8th, 2014
Sana Rezgui1, Rocky Koga2, Jeffrey George2, Steve Bielat2, Todd Owen1, Todd Bonte1, and
Robert Dobkin1
1
Linear Technology, 2The Aerospace Corporation
Acknowledgements
The authors would like to thank David Beebe and Sy Dorlybounxou, from the S-Power Design
Product Evaluation Group of Linear Technology for their help with the board design and
assembly as well as Steve Bielat and Jeffrey George from The Aerospace Corporation for their
assistance with the beam experiments. Special Thanks to the Aerospace Corporation team,
mainly David Meshel, and Rocky Koga, for their expediting these experiments.
1
Executive Summary
This report details the heavy-ion test experiments performed on the RH3080MK at the Lawrence
Berkeley National Labs (LBNL). The RH3080MK is a 0.9A Low Dropout linear regulator with a unique
architecture featuring a precision current source and voltage follower which allows the output to be
programmed to any voltage between zero and 36V, with a single-resistor. The wafer lots are processed to
Linear Technology's in house Class S flow to yield circuits usable in stringent military and space
applications. Heavy-ions induced SEE (Single Event Effect) experiments included Single Event Transient
(SET), Single Event Upset (SEU) and Single Event Latchup (SEL) tests up to an LET of 117.5
MeV.cm2/mg at elevated temperatures (to case temperatures of 100°C). Under heavy-ion irradiations,
with various power supply and input biases, as well as load conditions at the op-amp outputs, the
RH3080MK showed sensitivities only to SETs. Beam tests confirmed the immunity of this part to SEL
and SEU in all test conditions. The measured SET sensitive saturation cross-section is about 9E-4 cm2,
about 4% of the total die’s cross-section, while the SET threshold LET was about 3 MeV.cm2/mg.
The beam data correlated well with previous laser SET data published for this part [4] but not under
heavy-ions data [6]. Up to an LET of 58.78 MeV.cm2/mg, the SET pulse widths were shorter in time than
20us, and their delta amplitudes varied between -0.25V and +0.15V with SET shapes similar to the
circuit’s response to variations in the line or load regulation circuitries. For accurate selection of the
circuit peripheral parasitic, we would recommend that the designer simulates his design by injecting SETs
at the circuit’s inputs/outputs, as wide as the observed SETs in this report. This could be accomplished by
the LTSpice tool offered by Linear Technology, as most of the Linear LT parts spice models are offered
[7]. That should provide guidance to the designer but the result should be correlated with laser and beam
tests as most of the RH and LT parts differ in their process and sometimes in their design as well. The
wrong selection of these parasitic can make things worse as they may widen these SETs from tens to
hundreds of microseconds, and make it harder on the following circuit to not propagate them.
2
1. Overview
This report details the heavy-ion test experiments performed on the RH3080MK at the Lawrence
Berkeley National Labs (LBNL). The RH3080MK is a 0.9A Low Dropout linear regulator with a unique
architecture featuring a precision current source and voltage follower which allows the output to be
programmed to any voltage between zero and 36V, with a single-resistor. Multiple regulators can be
paralleled to increase total output current and spread heat over a system PC board with no need for heat
sinking. The pass transistor collector can be brought out independently of the circuit supply voltage to
allow dropout voltage to approach the saturation limit of the pass transistor. A small 2.2μF capacitor on
the output with an ESR of less than 0.5Ω is adequate to insure stability. Applications with large output
load transients require a larger output capacitor value to minimize output voltage change. Input circuitry
insures output safe operating area current limiting and thermal shutdown protection. The rated output
current of an RH3080-based part is fixed by internal wire length/resistance. Linear Technology dice
element evaluations are based on parts rated for 0.9A output current. The wafer lots are processed to
Linear Technology's in house Class S flow to yield circuits usable in stringent military and space
applications.
The device is qualified and available in TO3-4 Leads (K) hermetically sealed package. More details are
given about this RH-LDO in [1, 2 and 3]. This is a 1.5um technology using exclusively bipolar
transistors. The part’s block diagram is shown in Fig. 1. The K package designation is given in Fig. 2.
Absolute Maximum Ratings
(Note 1) (All voltages relative to VOUT)
VCONTROL Pin Voltage
IN Pin Voltage
SET Pin Current (Note 6)
SET Pin Voltage (Relative to OUT, Note 6)
Output Short-Circuit Duration
Operating Junction Temperature Range (Notes 2, 10)
Storage Temperature Range
40V, –0.3V
40V, –0.3V
10mA
0.3V
Indefinite
–55°C to 125°C
–65°C to 150°C
Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to
any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime.
Note 2: Unless otherwise specified, all voltages are with respect to VOUT. The RH3080MK DICE is tested and specified under
pulse load conditions such that TJ ≈ TA.
Note 3: Minimum load current is equivalent to the quiescent current of the part. Since all quiescent and drive current is delivered
to the output of the part, the minimum load current is the minimum current required to maintain regulation.
Note 4: Dropout results from either of minimum control voltage, VCONTROL, or minimum input voltage, VIN, both specified
with respect to VOUT. These specifications represent the minimum input-to-output differential voltage required to maintain
regulation.
Note 5: The VCONTROL pin current is the drive current required for the output transistor. This current tracks output current
with roughly a 1:60 ratio. The minimum value is equal to the quiescent current of the device.
Note 6: SET pin is clamped to the output with diodes. These devices only carry current under transient overloads.
Note 7: Adding a small capacitor across the reference current resistor lowers output noise. Adding this capacitor bypasses the
resistor shot noise and reference current noise; output noise is then equal to error amplifier noise (see LT3080 data sheet and
Application Note AN83).
Note 8: Dice are probe tested at 25°C to the limits shown in Table 1. Except for high current tests, dice are tested under low
current conditions which assure full load current specifications when assembled.
Note 9: Dice that are not qualified by Linear Technology with a can sample are guaranteed to meet specifications of Table 1
only. Dice qualified by Linear Technology with a can sample meet specifications in all tables.
3
Note 10: This IC includes over-temperature protection that is intended to protect the device during momentary overload
conditions. Junction temperature exceeds the maximum operating junction temperature when over-temperature protection is
active. Continuous operation above the specified maximum operating junction temperature may impair device reliability.
Note 11: Current limit may decrease to zero at input-to-output differential voltages (VIN – VOUT) greater than 26V. Operation
at voltages for both IN and VCONTROL is allowed up to a maximum of 36V as long as the difference between input and output
voltage is below the specified differential (VIN – VOUT) voltage. Line and load regulation specifications are not applicable
when the device is in current limit.
Note 12: Please refer to LT3080 standard product data sheet for Typical Performance Characteristics, Pin Functions,
Applications Information and Typical Applications.
Fig. 1: Block Diagram of the RH3080M DIE
Fig. 2: RH3080M in K Package
Third Party Vendor Availability
Linear Technology partners with third party vendors who assemble and test packaged products with LTC
RH Dice inside are listed in Table 1.
Table 1: MS Kennedy and Aeroflex Parts’ Availabilities
Part Number
Description
SCD or
SMD#
MSK5978RH
0.7A Adjustable, LDO Regulator, Split Bias
-
MSK5977RH
0.9A Adjustable, LDO, Regulator, Split Bias
-
MSK5976RH
1A Adjustable Regulator, Isolated Tab
-
1A Adjustable LDO Regulator, Split Bias
View
MSK5953RH
Dual 1A Adjustable LDO Regulator, Split Bias
-
VRG8667
Dual 1A Adjustable LDO Regulator, Split Bias
View
VRG8668
Dual 1A Adjustable LDO Regulator, Split Bias
View
VRG8666
Table 2 summarizes the parts’ features and the electrical test equipment.
4
Table 2: Test and Part’s Information
Generic Part Number
Package Marking
Manufacturer
Quantity tested
Dice Dimension
Part Function
Part Technology
Package Style
Test Equipment
Temperature and Tests
RH3080MK
RH3080MK
Fabrication Lot: H0923840.1
Linear Technology
2
44 mils x75 mils≈ 2.129 mm2
Radiation-Hardened Adjustable 0.9A Single
Resistor Low Dropout Regulator
BIPC150 (1.5um)
Hermetically sealed TO3-4Leads (K)
Power supply, oscilloscope, multimeter, and
computer
SET, SEU and SEL @ Room Temp. and 100°C
5
2. Test Setup
Custom SEE boards were built for heavy-ion tests by the Linear Technology team. The RH3080MK parts
were tested at LBNL on Apr. 2014 at two different temperatures (at room temperature as well as at
100°C). During the beam runs, we were monitoring the temperature of the adjacent sense transistor
(2N3904) to the DUT but not the die temperature (junction temperature). Hence the test engineer needs to
account for additional temperature difference between the dice and the sense transistor, which was not
measured in vacuum. In-air, both of the case and the sense transistor temperatures were measured to be
the same. The temperature difference between the junction of the die and the case is a function of the
DUT power dissipation multiplied by the thermal resistance Rtheta-JC(ƟJC). With no heating, the
temperature of the adjacent temperature sense transistor (2N3904) to the DUT (or the DUT case) was
measured on average at about 25°C. The junction temperature was not measured in vacuum; its
calculation is provided in Eq.1. This value was correlated in-air with a thermocouple.
TJ= TC+ PD* ƟJC
(1)
Where: TJ is the junction temperature, TC the case temperature, PD the power dissipated in the die and ƟJC
the thermal resistance between the die and the case. Note: A relatively small amount of power is
dissipated in other components on the board. That is not considered in this calculation.
The calculation of the dissipated power in the die is provided in Eq. 2:
PD = PDRIVE + POUTPUT .......... (2)
Where:
PDRIVE is the power dissipation in the Drive Circuit with PDRIVE = (VCONTROL – VOUT) * (ICONTROL).
POUTPUT is the power in the output transistor with POUTPUT = (VIN – VOUT)* (IOUT).
The VCONTROL pin current is the drive current required for the output transistor.
This current tracks output current with roughly a 1:60 ratio.
The ICONTROL is equal to IOUT/60. ICONTROL is a function of output current.
Since ICONTROL is negligible compared to IOUT, equation (2) can be simplified as such:
PD = (VIN – VOUT)* (IOUT)
(3)
Assuming that:
Tc = 25°C; VIN= 3.3V; VIN=VCONTROL= 3.3V; VOUT= 1.5V; IOUT=0.1A and ƟJC= 3°C/W [3],
PD= 180mW and TJ≈25.5°C
6
The SEE board contains:
-
The DUT (RH3080MK) with open-top (K package de-capped)
The input (C2) and output (C5) filtering ceramic capacitors with 10uF each
All capacitors were not populated except for C2, and C5, as they are needed to insure the good
stability of the LDO [1]. Although it is recommended to add 0.1uF on the SET pin, C4 was not
populated to not filter the true SET events on the SET output.
- The scope termination is set at 1MOhms.
- The 2N3904 bipolar transistor to sense the board’s temperature, placed as close as possible to the
DUT.
Fig. 3 shows the SEE test board schematics. The picture of this board is given in Fig. 4.
Fig. 3: Block Diagram of the RH3080MK SEE Test Board*
*Note that the same board with changes to some of the passive elements (R SET) was also used to test the 2.8A-RH-LDO
RH3083MK to SEEs under heavy-ions. Hence the labeling referred to the RH3083MK part on the board.
The SEE tests were run with VOUT = 1.5V, IOUT = 0.1A, RSET = RH3080MK-RSET1 = 150 KOhms; RLoad =
15 Ohms and with five various input voltage VIN bias conditions, 3.3V, 5V, 10V, 16V and 26V. All
radiation test results are provided in Table 5.
In addition, to minimize the distortion of the measured SET pulse-width (PW), the test setup was placed
as close as possible to the vacuum chamber. It is connected with two 3 feet long BNC cables to two
Agilent power supplies (PS) (N6705B) and to a LeCroy Oscilloscope (Waverunner HRO 66Zi, 600 MHz,
2 GS/s) with extended monitor/cables to view the SET and the VOUT output signals. The first PS supplies
the input voltages to the SEE test board and allows the automated logging and storage every 1 ms of the
current input supplies (Iin), as well as the automation of power-cycles after the detection of a current
spike on the input current that exceeds the current limit set by the user. The second PS is used for sensing
the voltages of the input power supplies. This was done to avoid any interference from the power supplies
that might cause widening of the transients upon the occurrence of an SET.
7
The SET signal and VOUT output signals were connected each to a scope channel with 3 feet BNC cable
(vacuum chamber feed-through) and a scope probe of 11pF. For better accuracy, the equivalent capacitive
load of the BNC cable and the scope probe should be calculated and accounted for, as it might affect the
SET pulse width and shape. In this case, the cables’ capacitive load was about 120pF. The scope was set
with 1MOhms termination.
a) Top Side
b) Bottom Side showing the high number of Thermal Vias that were added to dissipate the heat
through Conduction in the Heavy-Ion Vacuum Cell
Fig. 4: Photography of the RH3080MK SEE Test Board
8
3. Heavy-Ion Beam Test Conditions
The selected beam energy is 10MeV/nucleon, which correlates with beam ions delivered at a rate of 7.7
MHz (eq. to a period of 130 ns). During these 130 ns, the ions are generated only within very short pulses
that last for 10 ns, as shown in Fig. 5. At every pulse of 10 ns, N number of particles per square
centimeter, depending on the flux, will be irradiating the DUT. The calculation of N is provided in Eq. 3:
N= Flux *130ns
(3)
Fig. 5: Particle Emission during a Beam Run at Beam Energy of 10 MeV/nucleon; Emission Frequency = 7.7MHz
For instance if the flux equals 104 particles/cm2/second, the probability (N) of having a particle emitted
and striking within a defined square centimeter within a random 10ns active period and even during the
entire period of 130 ns is 1.30x10-3. Multiply that value by the die area to determine the probability of a
particle striking the die; 1.30x10-3 particles/cm2 * 2.477 10-2 cm2 = 3.22x10-5. We don’t know exactly at
what pulse this particle will be irradiating the DUT. The random nature of that emission will change the
elapsed time between any two consecutive particles. The higher the beam’s frequency or the flux; the
higher is the likelihood to have more than one particle hitting the DUT in a very short time (within
hundreds of nanoseconds). Indeed, the minimum time that is guaranteed by the facility to separate the
occurrences of two particles can be as low as 130 ns but the probability of that happening is very low. To
avoid overlapping of events, it is important then that the error-events last less than 130 ns or that the flux
is much reduced.
Most importantly, in the case of these analog devices (power, signal conditioning, etc.), some of the
DUT’s transistors when hit by heavy-ions will cause wide SETs that might last for microseconds. To
make sure that the error-rate calculation is accurate, the flux needs to be reduced until there is a
consistency in the number of detected errors with the flux for a given ions’ fluence. If that’s not the case,
the part is subject to multiple hits (that might cancel or widen the resulting SET). The test engineer needs
to account for these additional effects.
In this case, the beam flux must be set to lower values than 1000p/sec/cm2 for two main reasons: 1) avoid
cancellation of previous SET effect and 2) avoid increase of the SET pulse width and amplitude when two
events overlap. The run fluxes are reported in Table 5. Note that because of the high beam cost, we had
exceeded a few times, the maximum flux limit, which led to lower SET cross-sections than the real
sensitive cross-section of the part. This was clearly shown at high LETs (Fig. 18) and during the SEL
tests, where we needed the fluences to be 107 particles/sec.
9
Also, if the original SET is widened at the DUT output, by the peripheral RC circuits or even the ones
used to mitigate it, then the resulting event will dictate the maximum flux to be applied on the DUT. For
instance, because of the cabling between the SEE test board and the scope, that adds a minimum
capacitive load on the output signal of about 120pF, the final measured SET-PW on the scope can be
wider or smaller than the initial SET-PW originating from the DUT output. However, given the cabling
requirements (feed-through) at LBNL for vacuum in-beam tests, this minimum capacitive/resistive/
inductive load cannot be avoided. For such circuits, it is crucial then to reduce the length, the loading, as
much as possible, to avoid reflection of the SET signal through these cables, the beam facility noise
effects, etc.
Furthermore, the closer the power supply and the scope is to the test setup, the higher is the likelihood to
reduce the noise effects propagating through the beam facility cables and power grids. Ideally, it is
advised to have the entire test setup (the power supply along with the SET detection circuit fulfilling the
scope function) placed in the vacuum chamber to minimize these effects.
10
4. Radiation Test Results
Heavy-ions SEE experiments included SET, SEU and SEL tests up to a Linear Energy Transfer (LET) of
117 MeV.cm2/mg at elevated temperatures (to case temperatures of 100°C). In 39 runs, the RH3080MK
parts were irradiated under various input bias conditions, a fixed output voltage bias (1.5V), a single
resistor (15 Ohms, 1 Watt) equivalent to a 0.1A load, as well as different input supply biases ranging
between 3.3 and 26V, as shown in Table 3. As this is a floating LDO, only the differential input to output
bias voltage (Vin-Vout) matters. Hence, to speed-up the SEE tests with a few interruptions to the beam
chamber vacuum, fixing the output voltage while varying the input voltage is best. The maximum bias
was selected to be 26V to meet the datasheet requirement (Note 9 in LT3080 datasheet [2] and Note 11 in
RH3080 datasheet [1]), recited below. Table 5 shows the raw data for these runs. Neither SEU nor SEL
nor destructive events have been observed during all these tests; all events were transients, with various
amplitudes and pulse widths that depended on the LET. The SET cross-sections were independent of the
input to output differential voltage in all run heavy-ions beam experiments and used LETs.
Fig. 7: LT3080 Current Limit, extracted from LT3080 datasheet, Typical Performance Characteristics, page 6*
*LT3080 Online Datasheet (http://cds.linear.com/docs/en/datasheet/3080fc.pdf), page 4:
Note 9 (LT3080, page 4): Current limit may decrease to zero at input-to-output differential voltages (VIN–VOUT)
greater than 25V (DFN and MSOP package) or 26V (SOT-223, DD-Pak and T0-220 Package). Operation at
voltages for both IN and VCONTROL is allowed up to a maximum of 36V as long as the difference between input
and output voltage is below the specified differential (VIN–VOUT) voltage. Line and load regulation specifications
are not applicable when the device is in current limit.
Note 11 (RH3080 datasheet, page 3): Current limit may decrease to zero at input-to-output differential voltages
(VIN – VOUT) greater than 26V. Operation at voltages for both IN and VCONTROL is allowed up to a maximum
of 36V as long as the difference between input and output voltage is below the specified differential (VIN – VOUT)
voltage. Line and load regulation specifications are not applicable when the device is in current limit.
11
Table 3: RH3080MK Bias Test Conditions (Bias, Input, and Output Voltage and Load Currents)
RH-LDO Output Voltage (Vout)
Output Load Current (A) / RH-LDO Load Resistor
RH-LDO Input Voltage
1.5V
0.1A / 15 Ohms, 1 Watt
3.3V, 5V, 10V, 16V, and 26V
Also, the SET-PW on the DUT output is the sum of the prompt effect from the injected SET and the DUT
response time to it. The SET amplitude will vary with the injected charge (eq. to LET) and its diffusion in
the hit transistor and adjacent transistors to it. Once the hit input transistor has trigged to the ion’s
deposited charge, and since the circuit response is slower than the ion’s hit prompt and diffusion times,
the result SET is mostly shaped by the circuit’s response times. If hit in the output load circuitry, the SET
event will have the shape of the load transient response as shown in Figs. 8 and 9 and if hit in the input
part of the circuit, the SET shape will be similar to the line transient response, shown in Fig. 10. Also, all
observed SETs started at the SET output and then were shown on the VOUT output signal.
Fig. 8: Load Transient Response vs.
Settling Time
Fig. 9: Load Transient Response vs.
Settling Time
Fig. 10: Line Transient Response
Time vs. Settling Time
Figs. 8, 9 and 10, have been extracted from the Typical Performance Characteristics of the LT3080 datasheet, pg. 6.
For SET detection, the scope was set to trigger on positive and negative SETs as a result of a change in
the SET, VOUT, and VIN signals exceeding +/-20 mV (+/-1.3%). The pulse widths were calculated based
on these levels as well. Therefore, the reported SET-PW is always smaller than the SET base width (from
the time it starts till it ends). All the waveforms were saved during the beam tests and are available to the
reader per his/her request.
All of the Single Event Transients started at the SET output with a negative transient pulse (smaller than
44 microseconds in all cases), and remained negative except for a few where a sharp negative transient on
the SET signal was followed with a positive pulse, as shown in Fig. 11. Transients on the SET circuitry
affected the VOUT output signal in three different ways: 1) positive transient (Fig. 12), 2) negative
transient (Fig. 13), and 3) positive and then negative transient on the VOUT signal (Fig. 14). Although
wide, most of the transients on the SET signal were small in amplitudes (less than 100mV positive
transients and less than 300mV negative transients). On the output VOUT signal, the positive transients
were smaller than 150mV and the negative ones smaller than 80mV, both less than +/-10% of the nominal
output signal. Additionally, and as shown in Fig. 15, 90% of them were smaller in amplitudes than +/-5%
(+/-75mV) of the output VOUT signal. Similar SET amplitudes and widths to the beam observed SETs
were shown in [4, 5], during laser tests.
12
Signal Amplitude (V)
1.62
1.6
SET Signal
VOUT Signal
1.58
1.56
1.54
1.52
1.5
1.48
1.46
1.44
1.42
-1.E-05
0.E+00
1.E-05
2.E-05
3.E-05
4.E-05
5.E-05
Beam Time (sec)
Fig. 11: Negative and Positive Transient Pulse on the SET signal vs. Beam Time
Run 121, Waveform 82
Signal Amplitude (V)
1.56
SET Signal
VOUT Signal
1.54
1.52
1.50
1.48
1.46
1.44
1.42
-1.E-05
0.E+00
1.E-05
2.E-05
3.E-05
Beam Time (sec)
Fig. 12: Positive Transient Pulse on the VOUT Output Signal vs. Beam Time
Run 121, Waveform 5
13
Signal Amplitude (V)
1.55
1.5
1.45
1.4
SET Signal
Vout Signal
1.35
1.3
-1.E-05
1.E-05
3.E-05
Beam Time (sec)
Fig. 13: Negative Transient Pulse on the VOUT Output Signal vs. Beam Time
Run 121, Waveform 9
SET Signal
Vout Signal
Signal Amplitude (V)
1.7
1.6
1.5
1.4
1.3
1.2
-1.E-05
1.E-05
3.E-05
5.E-05
7.E-05
Beam Time (sec)
Fig. 14: Positive and then Negative Transient Pulse on the VOUT Output Signal vs. Beam Time;
Run 121, Waveform 13
Finally, Figs. 15 and 16 show that the cumulative distributions with the SET amplitudes and widths,
respectively. Fig. 17 shows the SET amplitudes versus the SET pulse-widths.
14
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
Fig. 15: % Cumulative Distributions vs. SET Pulse-Amplitudes
Runs#121, 156, Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.; Xenon Ions with LET=58.78 MeV.cm2/mg
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
Fig. 16: % Cumulative Distributions vs. SET Pulse-Widths
Runs#121, 156, Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.; Xenon Ions with LET=58.78 MeV.cm2/mg
15
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
-0.30
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
Fig. 17: % SET Pulse-Amplitudes vs. SET Pulse-Widths
Runs#121, 156, Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.; Xenon Ions with LET=58.78 MeV.cm2/mg
1) Input Voltage Supply Effects On the SET Pulse-Amplitudes and Pulse Widths and Cross-Sections
The beam data showed almost no dependence on the differential input to output voltage supply for the
SET Amplitudes and Widths as well as LETs. For complete SET pulse widths and amplitudes
dependences on the LETs and Bias conditions, see Appendix A.
Fig. 18 shows the SET cross-sections at different input biases and the fitting Weibull curves that
customers can use to determine the RH3080MK orbital error rates in their space flight designs. In Table 4
are provided the Weibull parameters for their calculations, as demonstrated in Eq. 4. Note that if SET
pulse amplitudes within 5% of the output signal can be ignored in their designs then the resulting orbital
error-rates will be negligible as 90% of these SETs can be ignored.
Table 4: Weibull Parameters Used for the RH3080MK SEE Cross-Section and the Calculation of the
Error Rates
L0
(MeV / mg-cm2)
2.4
W
(MeV / mg-cm2)
20
𝑆
𝜎 = 𝜎0 [1 − 𝑒 −((𝐿−𝐿0 )/𝑊) ]
S
1
σ0
(cm2)
9E-4
(4)
In summary, under heavy-ion irradiations, and at the various input bias conditions (Table 3), the
RH3080MK showed sensitivities only to SETs. The measured underlying SET sensitive cross-section (all
events added) is about 9E-4 cm2 (about 4% of the physical die cross-section), while the threshold LET is
about 3 MeV.cm2/mg.
16
SET/SEL Cross-Sections (cm2/RH3080MK)
1.E-02
Care was taken to avoid having two SETs
occuring at once by lowering the flux
and monitoring the SET occurence rate
1.E-03
During SEL Tests: Miss of SETs because of required
high Flux to get to high fluences (2X107 p/cm2) in
a reasonable beam time, which led to the
simultanuous occurence of many SETs at once =>
Actual SET Cross-Section at HOT should be higher
1.E-04
SET--Vin=3.3V; Vout=1.5V; Iout=0.1A; Room Temp
SET--Vin=5V; Vout=1.5V; Iout=0.1A; Room Temp
SET--Vin=10V; Vout=1.5V; Iout=0.1A; Room Temp
SET--Vin=16V; Vout=1.5V; Iout=0.1A; Room Temp
SET--Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp
SET--Vin=26V; Vout=1.5V; Iout=0.1A; TC=100C; many events at once
SEL--Vin=26V; Vout=1.5V; Iout=0.1A; TC=100C; High Flux
Weibull_SET
1.E-05
1.E-06
1.E-07
Arrows pointing down indicate no events
1.E-08
0
20
40
60
80
100
120
140
LET (MeV.cm2/mg)
Fig. 18: Measured SET and SEL Cross-Sections vs. LET, showing:
1) the RH3080MK immunity to Destructive Events including SELs
2) the non-dependence of SET Cross-Sections on the input to output differential voltage
2) LET Effects on the SET Pulse Widths and Amplitudes
As expected, Figs. 18 and 19 show that the SET pulse-widths and amplitudes increase with heavy-ion
LETs. In addition, except for the width of the negative transient pulses on the SET signal, which still
varied with the collected charge, all other SET amplitudes and widths seem to almost saturate above an
LET of 9.74 MeV.cm2/mg (Argon ions). On the other hand, the measured negative transient pulse-width
on the SET signal with Copper LETs (21.17 MeV.cm2/mg) were lower than with Krypton LETs (30.86
MeV.cm2/mg). This may be due to the high fluxes that were applied during the Copper runs, leading to
the summation of two SET pulse-widths at once.
17
SET Amplitudes on VOUT and
SET Signals (V)
1.5E-01
1.0E-01
5.0E-02
0.0E+00
-5.0E-02
SET-MAX
VOUT-MAX
SET-MIN
VOUT-MIN
40
60
-1.0E-01
-1.5E-01
-2.0E-01
-2.5E-01
-3.0E-01
0
10
20
30
50
70
LET (MeV.cm2/mg)
SET Pulse Widths on VOUT
and SET Signals (sec)
Fig. 18: % SET Maximum Pulse-Amplitudes vs. Linear Energy Transfer (LET)
Runs#123, 128, 133, 138, 143, 149, 152 and 155; Vin=10V; Vout=1.5V; Iout=0.1A; Room Temp.
SET-MAX
VOUT-MAX
4.0E-05
3.5E-05
SET-MIN
VOUT-MIN
3.0E-05
2.5E-05
2.0E-05
1.5E-05
1.0E-05
5.0E-06
0.0E+00
0
10
20
30
40
50
60
70
LET (MeV.cm2/mg)
Fig. 19: % SET Maximum Pulse-Widths vs. Linear Energy Transfer (LET)
Runs#123, 128, 133, 138, 143, 149, 152 and 155; Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.
18
2) SEL Immunity at Hot (100°C) (at 26V Input Voltage)
At high temperature (100°C) at the DUT case, the test results (red circles in Fig. 20) showed immunity to
SELs up to an LET of 117.5 MeV.cm2/mg. SET cross-sections at hot are shown in blue circles. The SEL
tests were run at input voltage equal to 26V, output voltage of 1.5V and load current of 100mA.
SET/SEL Cross-Sections at HOT (cm2/RH3080MK)
1.E-02
During SEL Tests: Miss of SETs because of required high Flux to get to high fluences
(2X107 p/cm2) in a reasonable beam time, which led to the simultanuous occurence
of many SETs at once => Actual SET Cross-Section at HOT should be higher
1.E-03
1.E-04
SET--Vin=26V; Vout=1.5V; Iout=0.1A; TC=100C; many events at once
1.E-05
SEL--Vin=26V; Vout=1.5V; Iout=0.1A; TC=100C; High Flux
1.E-06
1.E-07
Arrows pointing down indicate no events
1.E-08
0
20
40
60
80
100
120
140
LET (MeV.cm2/mg)
Fig. 20: Measured SEL Cross-Sections vs. LET, showing the RH3080MK immunity to Destructive
Events including SELs
Arrows pointing down are indication of no observed SETs up to that fluence at tested LET
19
Table 5: Raw Data for the Heavy-Ion Beam Runs
Run
DUT
#
145
146
147
136
135
153
126
125
154
144
148
137
134
127
124
143
149
138
133
152
128
123
155
142
139
132
129
122
141
150
140
131
151
130
121
156
157
158
159
2
4
4
2
2
4
2
2
4
2
4
2
2
2
2
2
4
2
2
4
2
2
4
2
2
2
2
2
2
4
2
2
4
2
2
4
4
4
4
Tb
(Vacuum)
C
23
32
20
23
23
27
23
23
25
25
22
23
25
27
25
27
22
23
27
25
27
27
27
25
23
25
25
27
32
25
23
32
30
25
23
27
95
95
95
Vin
(V)
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
5.0
5.0
5.0
5.0
5.0
5.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
16.0
16.0
16.0
16.0
16.0
26.0
26.0
26.0
26.0
26.0
26.0
26.0
26.0
26.0
26.0
26.0
VinVout
(V)
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
3.5
3.5
3.5
3.5
3.5
3.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
14.5
14.5
14.5
14.5
14.5
24.5
24.5
24.5
24.5
24.5
24.5
24.5
24.5
24.5
24.5
24.5
Pd
Tj
Ion
W
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.18
0.36
0.36
0.36
0.36
0.36
0.36
0.86
0.86
0.86
0.86
0.86
0.86
0.86
0.86
1.47
1.47
1.47
1.47
1.47
2.49
2.49
2.49
2.49
2.49
2.49
2.49
2.49
2.49
2.49
2.49
C
24
33
20
24
24
28
24
24
25
26
23
24
26
28
26
30
25
26
30
27
30
30
30
29
28
29
29
31
39
32
31
39
37
32
31
34
102
102
102
Ne 3.49
Ne 3.49
Ne 3.49
Ar 9.74
Cu 21.17
Cu 21.17
Kr 30.86
Xe 58.78
Xe 58.78
Ne 3.49
Ne 3.49
Ar 9.74
Cu 21.17
Kr 30.86
Xe 58.78
Ne 3.49
Ne 3.49
Ar 9.74
Cu 21.17
Cu 21.17
Kr 30.86
Xe 58.78
Xe 58.78
Ne 3.49
Ar 9.74
Cu 21.17
Kr 30.86
Xe 58.78
Ne 3.49
Ne 3.49
Ar 9.74
Cu 21.17
Cu 21.17
Kr 30.86
Xe 58.78
Xe 58.78
Xe 58.78
Xe 58.78
Xe 58.78
Total Eff
Fluence
p/cm2
2.01E+06
2.01E+06
2.01E+06
2.02E+05
2.01E+05
2.01E+05
5.30E+05
1.50E+05
1.31E+05
2.01E+06
2.01E+06
2.02E+05
2.02E+05
3.18E+05
1.56E+05
2.01E+06
2.01E+06
2.01E+05
2.02E+05
2.01E+05
2.31E+05
1.33E+05
1.31E+05
2.01E+06
2.01E+05
2.02E+05
2.38E+05
1.26E+05
2.01E+06
2.01E+06
2.02E+05
2.01E+05
2.24E+05
2.53E+05
1.26E+05
1.59E+05
1.00E+07
1.53E+06
2.00E+07
Average
Flux
p/sec/cm2
1.60E+04
1.56E+04
1.57E+04
1.94E+03
1.96E+03
1.04E+03
1.92E+03
5.94E+02
8.41E+02
1.59E+04
1.57E+04
1.99E+03
2.50E+03
1.88E+03
6.01E+02
1.59E+04
5.58E+03
2.12E+03
2.54E+03
1.04E+03
1.93E+03
5.43E+02
8.69E+02
1.36E+04
2.13E+03
2.52E+03
1.93E+03
9.12E+02
6.46E+03
1.54E+04
2.08E+03
2.49E+03
1.18E+03
1.91E+03
1.14E+03
8.53E+02
2.81E+04
3.03E+04
5.41E+04
Maximum
Flux
p/sec/cm2
1.63E+04
1.62E+04
1.66E+04
5.46E+03
2.70E+03
1.16E+03
2.10E+03
6.96E+02
9.81E+02
1.62E+04
1.60E+04
5.39E+03
2.73E+03
2.07E+03
7.09E+02
1.63E+04
1.61E+04
2.47E+03
2.73E+03
1.16E+03
2.10E+03
1.31E+03
9.96E+02
1.62E+04
2.43E+03
2.71E+03
2.09E+03
1.30E+03
8.55E+03
1.59E+04
2.51E+03
2.68E+03
1.55E+03
2.06E+03
1.28E+03
9.65E+02
3.20E+04
3.15E+04
1.07E+05
Tilt Angle
Eff. LET
SET
SEL
degrees
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
60
MeV.cm2/mg
3.49
3.49
3.49
9.74
21.17
21.17
30.86
58.78
58.78
3.49
3.49
9.74
21.17
30.86
58.78
3.49
3.49
9.74
21.17
21.17
30.86
58.78
58.78
3.49
9.74
21.17
30.86
58.78
3.49
3.49
9.74
21.17
21.17
30.86
58.78
58.78
58.78
58.78
117.56
#
24
#
0
27
49
81
101
262
122
101
20
27
51
85
155
122
17
22
51
81
90
113
110
109
26
57
90
111
109
31
29
51
84
103
130
104
136
2103
316
4519
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
SET CrossSection
cm2/circuit
1.19E-05
invalid run
1.34E-05
2.43E-04
4.03E-04
5.02E-04
4.94E-04
8.13E-04
7.71E-04
9.95E-06
1.34E-05
2.52E-04
4.21E-04
4.87E-04
7.82E-04
8.46E-06
1.09E-05
2.54E-04
4.01E-04
4.48E-04
4.89E-04
8.27E-04
8.32E-04
1.29E-05
2.84E-04
4.46E-04
4.66E-04
8.65E-04
1.54E-05
1.44E-05
2.52E-04
4.18E-04
4.60E-04
5.14E-04
8.25E-04
8.55E-04
2.10E-04
2.07E-04
2.26E-04
SEL CrossSection
cm2/circuit
4.98E-07
4.98E-07
4.95E-06
4.98E-06
4.98E-06
1.89E-06
6.67E-06
7.63E-06
4.98E-07
4.98E-07
4.95E-06
4.95E-06
3.14E-06
6.41E-06
4.98E-07
4.98E-07
4.98E-06
4.95E-06
4.98E-06
4.33E-06
7.52E-06
7.63E-06
4.98E-07
4.98E-06
4.95E-06
4.20E-06
7.94E-06
4.98E-07
4.98E-07
4.95E-06
4.98E-06
4.46E-06
3.95E-06
7.94E-06
6.29E-06
8.67E-08
5.00E-08
*Tb is the temperature sensed by the transistor on the board (as shown in Fig. 5)
3ft BNC cable (120pF)
Energy Cocktail = 10MeV/nucleon
Vout = 1.5V; Iout = 0.1A; Rout = 15 Ohms; Tjc =3C/W
20
References:
[1] RH3080M DataSheet: http://www.linear.com/product/RH3080MK
[2] LT3080 Datasheet: http://www.linear.com/product/LT3080
[3] RH3080M Spec.: http://cds.linear.com/docs/en/spec-notice/RH3080MK_DIE_CAN_SAM_05-08-5246_DICE_SPEC_REV__C.pdf
[4] NASA-GSFC, Jonathan Pellish, Single Event Transient Testing of RH3080 Laser Test Report, June 2006.
[5] NASA-GSFC, Michael Campola, Dakai Chen, Sana Rezgui, Single Event Transient Testing of RH3080 Laser Test Report, February 2013.
[6] NASA-GSFC, Dakai Chen, Paul Musil, Single Event Transient Testing of MSK5978RH Heavy-Ions Test Report, August 2012.
[7] LTSpice: http://www.linear.com/designtools/software/#LTspice
21
Appendix A.: SET Distributions in Pulse Widths and Amplitudes per
Bias Conditions
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
21.
22.
23.
24.
25.
Vin=3.3V; Vout=1.5V; Iout=0.1A; Room Temp.; Neon Ions; LET=3.49 MeV.cm2/mg (Runs 145, 147)
Vin=3.3V; Vout=1.5V; Iout=0.1A; Room Temp.; Argon Ions; LET=9.74 MeV.cm2/mg (Runs 136)
Vin=3.3V; Vout=1.5V; Iout=0.1A; Room Temp.; Cupper Ions; LET=21.17 MeV.cm2/mg (Runs 135, 153)
Vin=3.3V; Vout=1.5V; Iout=0.1A; Room Temp.; Krypton Ions; LET=30.86 MeV.cm2/mg (Runs 126)
Vin=3.3V; Vout=1.5V; Iout=0.1A; Room Temp.; Xenon Ions; LET=58.78 MeV.cm2/mg (Runs 125, 154)
Vin=5V; Vout=1.5V; Iout=0.1A; Room Temp.; Neon Ions; LET=3.49 MeV.cm2/mg (Runs 144, 148)
Vin=5V; Vout=1.5V; Iout=0.1A; Room Temp.; Argon Ions; LET=9.74 MeV.cm2/mg (Runs 137)
Vin=5V; Vout=1.5V; Iout=0.1A; Room Temp.; Cupper Ions; LET=21.17 MeV.cm2/mg (Runs 134)
Vin=5V; Vout=1.5V; Iout=0.1A; Room Temp.; Krypton Ions; LET=30.86 MeV.cm2/mg (Runs 127)
Vin=5V; Vout=1.5V; Iout=0.1A; Room Temp.; Xenon Ions; LET=58.78 MeV.cm2/mg (Runs 124)
Vin=10V; Vout=1.5V; Iout=0.1A; Room Temp.; Neon Ions; LET=3.49 MeV.cm2/mg (Runs 143,149)
Vin=10V; Vout=1.5V; Iout=0.1A; Room Temp.; Argon Ions; LET=9.74 MeV.cm2/mg (Runs 138)
Vin=10V; Vout=1.5V; Iout=0.1A; Room Temp.; Cupper Ions; LET=21.17 MeV.cm2/mg (Runs 133, 152)
Vin=10V; Vout=1.5V; Iout=0.1A; Room Temp.; Krypton Ions; LET=30.86 MeV.cm2/mg (Runs 128)
Vin=10V; Vout=1.5V; Iout=0.1A; Room Temp.; Xenon Ions; LET=58.78 MeV.cm2/mg (Runs 123, 155)
Vin=16V; Vout=1.5V; Iout=0.1A; Room Temp.; Neon Ions; LET=3.49 MeV.cm2/mg (Runs 142)
Vin=16V; Vout=1.5V; Iout=0.1A; Room Temp.; Argon Ions; LET=9.74 MeV.cm2/mg (Runs 139)
Vin=16V; Vout=1.5V; Iout=0.1A; Room Temp.; Cupper Ions; LET=21.17 MeV.cm2/mg (Runs 132)
Vin=16V; Vout=1.5V; Iout=0.1A; Room Temp.; Krypton Ions; LET=30.86 MeV.cm2/mg (Runs 129)
Vin=16V; Vout=1.5V; Iout=0.1A; Room Temp.; Xenon Ions; LET=58.78 MeV.cm2/mg (Runs 122)
Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.; Neon Ions; LET=3.49 MeV.cm2/mg (Runs 141, 150)
Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.; Argon Ions; LET=9.74 MeV.cm2/mg (Runs 140)
Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.; Cupper Ions; LET=21.17 MeV.cm2/mg (Runs 131, 151)
Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.; Krypton Ions; LET=30.86 MeV.cm2/mg (Runs 130)
Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.; Xenon Ions; LET=58.78 MeV.cm2/mg (Runs 121, 156)
22
Vin=3.3V; Vout=1.5V; Iout=0.1A; Room Temp.; Neon Ions; LET=3.49 MeV.cm2/mg (Runs 145, 147)
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.20
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
0.15
SET Pulse Amplitude Relative to Initial Value (V)
1.
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
23
Vin=3.3V; Vout=1.5V; Iout=0.1A; Room Temp.; Argon Ions; LET=9.74 MeV.cm2/mg (Runs 136)
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
0.15
SET Pulse Amplitude Relative to Initial Value (V)
2.
0.10
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
24
Vin=3.3V; Vout=1.5V; Iout=0.1A; Room Temp.; Cupper Ions; LET=21.17 MeV.cm2/mg (Runs 135, 153)
% Cumulative Distribution
100%
10%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
0.15
SET Pulse Amplitude Relative to Initial Value (V)
3.
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
-0.25
-0.30
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
25
Vin=3.3V; Vout=1.5V; Iout=0.1A; Room Temp.; Krypton Ions; LET=30.86 MeV.cm2/mg (Runs 126)
% Cumulative Distribution
100%
10%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
0.15
SET Pulse Amplitude Relative to Initial Value (V)
4.
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
26
Vin=3.3V; Vout=1.5V; Iout=0.1A; Room Temp.; Xenon Ions; LET=58.78 MeV.cm2/mg (Runs 125, 154)
% Cumulative Distribution
100%
10%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
Max Pos. SET (VOut)
1%
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
0.15
SET Pulse Amplitude Relative to Initial Value (V)
5.
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
27
Vin=5V; Vout=1.5V; Iout=0.1A; Room Temp.; Neon Ions; LET=3.49 MeV.cm2/mg (Runs 144, 148)
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
0.15
SET Pulse Amplitude Relative to Initial Value (V)
6.
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
28
Vin=5V; Vout=1.5V; Iout=0.1A; Room Temp.; Argon Ions; LET=9.74 MeV.cm2/mg (Runs 137)
% Cumulative Distribution
100%
10%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
0.15
SET Pulse Amplitude Relative to Initial Value (V)
7.
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
29
Vin=5V; Vout=1.5V; Iout=0.1A; Room Temp.; Cupper Ions; LET=21.17 MeV.cm2/mg (Runs 134)
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
0.15
SET Pulse Amplitude Relative to Initial Value (V)
8.
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
30
Vin=5V; Vout=1.5V; Iout=0.1A; Room Temp.; Krypton Ions; LET=30.86 MeV.cm2/mg (Runs 127)
% Cumulative Distribution
100%
10%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
0.15
SET Pulse Amplitude Relative to Initial Value (V)
9.
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
31
10. Vin=5V; Vout=1.5V; Iout=0.1A; Room Temp.; Xenon Ions; LET=58.78 MeV.cm2/mg (Runs 124)
% Cumulative Distribution
100%
10%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
32
11. Vin=10V; Vout=1.5V; Iout=0.1A; Room Temp.; Neon Ions; LET=3.49 MeV.cm2/mg (Runs 143,149)
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
33
12. Vin=10V; Vout=1.5V; Iout=0.1A; Room Temp.; Argon Ions; LET=9.74 MeV.cm2/mg (Runs 138)
% Cumulative Distribution
100%
10%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
34
13. Vin=10V; Vout=1.5V; Iout=0.1A; Room Temp.; Cupper Ions; LET=21.17 MeV.cm2/mg (Runs 133, 152)
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
35
14. Vin=10V; Vout=1.5V; Iout=0.1A; Room Temp.; Krypton Ions; LET=30.86 MeV.cm2/mg (Runs 128)
% Cumulative Distribution
100%
10%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
36
15. Vin=10V; Vout=1.5V; Iout=0.1A; Room Temp.; Xenon Ions; LET=58.78 MeV.cm2/mg (Runs 123, 155)
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
37
16. Vin=16V; Vout=1.5V; Iout=0.1A; Room Temp.; Neon Ions; LET=3.49 MeV.cm2/mg (Runs 142)
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
38
17. Vin=16V; Vout=1.5V; Iout=0.1A; Room Temp.; Argon Ions; LET=9.74 MeV.cm2/mg (Runs 139)
% Cumulative Distribution
100%
10%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
39
18. Vin=16V; Vout=1.5V; Iout=0.1A; Room Temp.; Cupper Ions; LET=21.17 MeV.cm2/mg (Runs 132)
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
40
19. Vin=16V; Vout=1.5V; Iout=0.1A; Room Temp.; Krypton Ions; LET=30.86 MeV.cm2/mg (Runs 129)
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
41
20. Vin=16V; Vout=1.5V; Iout=0.1A; Room Temp.; Xenon Ions; LET=58.78 MeV.cm2/mg (Runs 122)
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
42
% Cumulative Distribution
21. Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.; Neon Ions; LET=3.49 MeV.cm2/mg (Runs 141, 150)
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
Max Pos. SET (VOut)
1%
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
43
22. Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.; Argon Ions; LET=9.74 MeV.cm2/mg (Runs 140)
% Cumulative Distribution
100%
10%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
44
23. Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.; Cupper Ions; LET=21.17 MeV.cm2/mg (Runs 131, 151)
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
45
24. Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.; Krypton Ions; LET=30.86 MeV.cm2/mg (Runs 130)
% Cumulative Distribution
100%
10%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
1%
Max Pos. SET (VOut)
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
46
25. Vin=26V; Vout=1.5V; Iout=0.1A; Room Temp.; Xenon Ions; LET=58.78 MeV.cm2/mg (Runs 121, 156)
% Cumulative Distribution
100%
SET-MAX
Vout-MAX
SET-MIN
Vout-MIN
10%
1%
0%
-0.30
-0.20
-0.10
0.00
0.10
SET Amp. Relative to SET and Vout Nominal Values(V)
% Cumulative Distribution
100%
10%
Max Pos. SET (SET)
Max Pos. SET (VOut)
1%
Max Neg. SET (SET)
Max Neg. SET (Vout)
0%
1.0E-10
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
SET Pulse Amplitude Relative to Initial Value (V)
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
1.0E-07
Max Pos. SET (SET)
Max Neg. SET (SET)
Max Pos. SET (Vout)
Max Neg. SET (Vout)
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
47