INITIAL PRODUCT/PROCESS CHANGE NOTIFICATION Generic Copy 02-JUL-2002 SUBJECT: ON Semiconductor Initial Product/Process Change Notification #12477 TITLE: High Frequency, High Voltage NPN Transistors and Switching Diode Transfer from Primarion Fab to ISMF Fab EFFECTIVE DATE: 30-Oct-2002 AFFECTED CHANGE CATEGORY: ON Semiconductor Fab Site Subcontractor Fab Site AFFECTED PRODUCT DIVISION: Bipolar Discretes Products Div ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Laura Rivers <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office or Barbara Matteson <[email protected]> FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact Sales Office or Donald Barlow <[email protected]> DISCLAIMER: Initial Product/Process Change Notification (IPCN) - First Notification distributed to customers. Distributed at least 120 days from the effective date of the change. This is an 'early warning' about an upcoming change and contains general information regarding the change details and devices affected. It also contains at least a reliability qualification plan, but the actual qualification data will be identified in the Final Product/Process Change Notification (FPCN). This notification will be followed by a Final Product/Process Change Notification (FPCN) at least 60 days from effective date of change. DESCRIPTION AND PURPOSE: In order to continue to fully support our customer's requirements for High Frequency NPN Transistors, High Voltage NPN Transistors and selected Switching Diodes, the fabrication of these devices is being moved from ON Semiconductor's current subcontractor wafer fab, Primarion in Phoenix Arizona to ON Semiconductor's internal wafer fab ISMF in Seremban, Malaysia. Issue Date: 02 July, 2002 Page 1 of 4 Initial Product/Process Change Notification #12477 QUALIFICATION PLAN: Qual Vehicles : MMBTA42LT1, MMBTH10LT1, BAS21LT1 TEST: CONDITIONS INTERVAL SIZE Autoclave Ta=121DegC , RH=100%, P=15 psig, 0 96 240 240 Temperature Cycle Ta=65/+150DegC, Air to Air, 0 Dwell equal to or greater 500 than 15 Min., 1000 Transfer equal to or less than 10 Min. 240 240 240 IOL Ton=2 min, Toff=2min, Ta=25 DegC 7500 cycles 15000 cycles 240 240 External Visual Equal to or greater than Mid-Std-750, Method 2071 N/M 100% D.P.A Random sample of good N/M Temp Cycle and H3TRB devices per CDF-AEC-Q101-004 Section 6 Die Bond (Die Shear) In-process assembly N/M 15 Wire Bond (Pull) In-process assembly N/M 15 High Humidity High Temp. Reverse Bias Ta=+85DegC, RH=85% 0 504 1008 240 240 240 High Temp. Reverse Bias Ta=+150DegC 0 504 1008 240 240 240 Electro Static Discharge Human Body Model & Machine Models 1 & 2 N/M Issue Date: 02 July, 2002 Page 2 of 4 Initial Product/Process Change Notification #12477 AFFECTED DEVICE LIST (WITHOUT SPECIALS): PART 2N6515 2N6515RLRM 2N6517 2N6517RLRA 2N6517RLRP BAS116LT1 BAV199LT1 BF393 BF393ZL1 BF420RL1 BF420ZL1 BF422 BF422RL1 BF422ZL1 BF720T1 BF720T3 BF959 BF959RL1 BF959ZL1 BSP19AT1 BSV52LT1 LM9018H LMCF2330WP LMCF2369WP MMBC1321Q4LT1 MMBT2222ALT1P MMBT2369ALT1 MMBT2369ALT3 MMBT2369LT1 MMBT3904LT1P MMBT6517LT1 MMBT6517LT3 MMBT918LT1 MMBTA42LT1 MMBTA42LT3 MMBTA43LT1 MMBTH10-4LT1 MMBTH10LT1 MMPQ2369 MMPQ2369R2 MPS2369 MPS2369A MPS2369ARLRP MPS2369RLRA MPS2369ZL1 MPS3563 MPS3563RLRA MPS3646 MPS3646RLRA MPS3646RLRM MPS5179 MPS5179RLRA MPS5179RLRP Issue Date: 02 July, 2002 Page 3 of 4 Initial Product/Process Change Notification #12477 MPS6507 MPS918 MPS918ZL1 MPSA42 MPSA42RL1 MPSA42RLRA MPSA42RLRE MPSA42RLRF MPSA42RLRM MPSA42RLRP MPSA42ZL1 MPSA43 MPSA43RLRA MPSA43ZL1 MPSA44 MPSA44RL1 MPSA44RLRA MPSH10 MPSH10RLRA MPSH10RLRP MPSH17 MPSH17RLRA MPSW42 MPSW42RLRA MSC2295-BT1 MSC2295-CT1 MSC3130T1 MSC3930-BT1 MSD2714AT1 MSD42T1 MSD42WT1 NSF2250WT1 NSR2369AWP NSVF2250WT1 P2N2369ZL1 PBF259RSRL1 PBF259RSZL1 PZTA42T1 SBAV199LT1 SMMBT2369ALT1 SMMBT2369ALT3 SMMBT6517LT1 SMMBT6517LT3 SMMBT918LT1 SMMBTA42LT1 SMMBTA42LT3 SMMBTH10LT1 SSVPZTA42T1 Issue Date: 02 July, 2002 Page 4 of 4