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INITIAL PRODUCT/PROCESS CHANGE NOTIFICATION
Generic Copy
02-JUL-2002
SUBJECT: ON Semiconductor Initial Product/Process Change Notification #12477
TITLE: High Frequency, High Voltage NPN Transistors and Switching Diode Transfer from
Primarion Fab to ISMF Fab
EFFECTIVE DATE: 30-Oct-2002
AFFECTED CHANGE CATEGORY:
ON Semiconductor Fab Site
Subcontractor Fab Site
AFFECTED PRODUCT DIVISION: Bipolar Discretes Products Div
ADDITIONAL RELIABILITY DATA: Available
Contact your local ON Semiconductor Sales Office or Laura Rivers <[email protected]>
SAMPLES: Contact your local ON Semiconductor Sales Office
or Barbara Matteson <[email protected]>
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact Sales Office or Donald Barlow <[email protected]>
DISCLAIMER:
Initial Product/Process Change Notification (IPCN) - First Notification distributed to customers.
Distributed at least 120 days from the effective date of the change.
This is an 'early warning' about an upcoming change and contains general information regarding the
change details and devices affected. It also contains at least a reliability qualification plan, but the
actual qualification data will be identified in the Final Product/Process Change Notification (FPCN).
This notification will be followed by a Final Product/Process Change Notification (FPCN)
at least 60 days from effective date of change.
DESCRIPTION AND PURPOSE:
In order to continue to fully support our customer's requirements for High Frequency NPN Transistors,
High Voltage NPN Transistors and selected Switching Diodes, the fabrication of these devices is being
moved from ON Semiconductor's current subcontractor wafer fab, Primarion in Phoenix Arizona to
ON Semiconductor's internal wafer fab ISMF in Seremban, Malaysia.
Issue Date: 02 July, 2002
Page 1 of 4
Initial Product/Process Change Notification #12477
QUALIFICATION PLAN:
Qual Vehicles :
MMBTA42LT1, MMBTH10LT1, BAS21LT1
TEST:
CONDITIONS
INTERVAL
SIZE
Autoclave
Ta=121DegC , RH=100%,
P=15 psig,
0
96
240
240
Temperature
Cycle
Ta=65/+150DegC, Air to Air,
0
Dwell equal to or greater
500
than 15 Min.,
1000
Transfer equal to or less than 10 Min.
240
240
240
IOL
Ton=2 min, Toff=2min,
Ta=25 DegC
7500 cycles
15000 cycles
240
240
External
Visual
Equal to or greater
than Mid-Std-750,
Method 2071
N/M
100%
D.P.A
Random sample of good
N/M
Temp Cycle and H3TRB devices per
CDF-AEC-Q101-004 Section
6
Die Bond
(Die Shear)
In-process assembly
N/M
15
Wire Bond
(Pull)
In-process assembly
N/M
15
High Humidity
High Temp.
Reverse Bias
Ta=+85DegC, RH=85%
0
504
1008
240
240
240
High Temp.
Reverse Bias
Ta=+150DegC
0
504
1008
240
240
240
Electro Static
Discharge
Human Body Model &
Machine Models 1 & 2
N/M
Issue Date: 02 July, 2002
Page 2 of 4
Initial Product/Process Change Notification #12477
AFFECTED DEVICE LIST (WITHOUT SPECIALS):
PART
2N6515
2N6515RLRM
2N6517
2N6517RLRA
2N6517RLRP
BAS116LT1
BAV199LT1
BF393
BF393ZL1
BF420RL1
BF420ZL1
BF422
BF422RL1
BF422ZL1
BF720T1
BF720T3
BF959
BF959RL1
BF959ZL1
BSP19AT1
BSV52LT1
LM9018H
LMCF2330WP
LMCF2369WP
MMBC1321Q4LT1
MMBT2222ALT1P
MMBT2369ALT1
MMBT2369ALT3
MMBT2369LT1
MMBT3904LT1P
MMBT6517LT1
MMBT6517LT3
MMBT918LT1
MMBTA42LT1
MMBTA42LT3
MMBTA43LT1
MMBTH10-4LT1
MMBTH10LT1
MMPQ2369
MMPQ2369R2
MPS2369
MPS2369A
MPS2369ARLRP
MPS2369RLRA
MPS2369ZL1
MPS3563
MPS3563RLRA
MPS3646
MPS3646RLRA
MPS3646RLRM
MPS5179
MPS5179RLRA
MPS5179RLRP
Issue Date: 02 July, 2002
Page 3 of 4
Initial Product/Process Change Notification #12477
MPS6507
MPS918
MPS918ZL1
MPSA42
MPSA42RL1
MPSA42RLRA
MPSA42RLRE
MPSA42RLRF
MPSA42RLRM
MPSA42RLRP
MPSA42ZL1
MPSA43
MPSA43RLRA
MPSA43ZL1
MPSA44
MPSA44RL1
MPSA44RLRA
MPSH10
MPSH10RLRA
MPSH10RLRP
MPSH17
MPSH17RLRA
MPSW42
MPSW42RLRA
MSC2295-BT1
MSC2295-CT1
MSC3130T1
MSC3930-BT1
MSD2714AT1
MSD42T1
MSD42WT1
NSF2250WT1
NSR2369AWP
NSVF2250WT1
P2N2369ZL1
PBF259RSRL1
PBF259RSZL1
PZTA42T1
SBAV199LT1
SMMBT2369ALT1
SMMBT2369ALT3
SMMBT6517LT1
SMMBT6517LT3
SMMBT918LT1
SMMBTA42LT1
SMMBTA42LT3
SMMBTH10LT1
SSVPZTA42T1
Issue Date: 02 July, 2002
Page 4 of 4